V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Dual Heat Dissipation Paths Increase Current Density AND TEC I INNOVAT O L OGY PolarPAK ® N HN POWER MOSFETs O 19 62-2012 PolarPAK® Brings Standard Packaging to Double-Sided Cooling FEATURES • Leadframe and plastic encapsulation construction –– Provides better die protection and reliability –– Easier manufacturing handling –– Fixed footprint and pad layout independent of die size, ≤ 100 V • Top (1 ºC/W) and bottom (1 ºC/W) cooling provides dual heat dissipation paths for forced air applications • Easy to parallel devices, lowering inductance from board layouts • Low parasitic inductance improves efficiency, especially at higher frequencies • Double current density (> 60 A) reduces space and cost • Same footprint area as SO-8 • 0.8 mm profile, less than half of SO-8 APPLICATIONS • VRM modules for servers and workstations • Fixed telecom and data communication systems RESOURCES • Datasheets: http://www.vishay.com/mosfets/polarpak-package/ • For technical questions contact: [email protected] • More featured products: http://www.vishay.com/landingpage/tradeshows/ powermanagement/2011/mosfets.html One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0052-1209 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . I INNOVAT 19 62-2012 PolarPAK® 9 G Top View 8 S 7 S D D 1 G 2 Efficiency Comparison S 3 Bottom View 6 D 5.15 mm 10 D S 4 D D 5 S G D 6.15 mm PolarPAK Paralleling (VIN = (V 12 V , = V = 1.3 V) Efficiency Comparison IN OUT12 V , VOUT = 1.3 V) 88 87 Efficiency (%) MOSFETs – Dual Heat Dissipation Paths Increase Current Density AND TEC O L OGY PolarPAK ® N HN POWER MOSFETs O 86 85 84 83 82 81 80 PolarPAK HS & LS DRAIN 3 SOURCE 4 DRAIN 2 Top-Side Cooling Competition HS & LS R1 PowerPAK HS & LS 30 60 90 GATE 120 2 1 U1 SIE802DF U2 SIE802DF U3 SIE802DF 2 2 2 R2 1 2 R3 1 2 1 Output Current (Amperes) PART NUMBER RDS(ON) (Ω) Qg VDS (V) VGS (V) SiE820DF 20 12 SiE822DF 20 20 0.0034 0.0055 SiE882DF 25 20 0.0014 SiE878DF 25 20 SiE848DF 30 20 SiE860DF 30 SiE862DF 30 SiE844DF 30 20 SiE868DF 40 20 SiE832DF 40 20 0.0055 SiE876DF 60 20 0.0061 SiE818DF 75 20 0.0095 SiE854DF 100 20 0.0142 50 SiE804DF 150 20 0.038 70 SiE836DF 200 30 0.13 27 VGS=10V (nC) SAMPLES VGS=4.5V VGS=2.5V VGS=10V VGS=4.5V 0.0035 0.0064 95 43 Available 52 24 Available 0.0018 96 46 Available 0.0052 0.0068 24 11.2 Available 0.0016 0.0022 92 43 Available 20 0.0021 0.0028 70 34 Available 20 0.0032 0.0041 48 23 Available 0.007 0.010 29 13.1 Available 0.0023 0.0029 95 45 Available 0.007 51 25 Available SINGLE 51 0.0125 63 Available 33 Available Available 46 Available Available MOSFET AND SCHOTTKY DIODE SiE726DF 30 20 0.0024 0.0033 105 50 Available * Target specifications For list of latest devices visit http://www.vishay.com/mosfets/polarpak-package/ PRODUCT SHEET 2/2 VMN-PT0052-1209 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000