Product Sheet

V I S H AY I N T E R T E C H N O L O G Y, I N C .
MOSFETs – Dual Heat Dissipation Paths Increase Current Density
AND TEC
I
INNOVAT
O L OGY
PolarPAK ®
N
HN
POWER MOSFETs
O
19
62-2012
PolarPAK® Brings Standard Packaging
to Double-Sided Cooling
FEATURES
• Leadframe and plastic encapsulation construction
–– Provides better die protection and reliability
–– Easier manufacturing handling
–– Fixed footprint and pad layout independent of die size, ≤ 100 V
• Top (1 ºC/W) and bottom (1 ºC/W) cooling provides dual heat dissipation paths for forced air
applications
• Easy to parallel devices, lowering inductance from board layouts
• Low parasitic inductance improves efficiency, especially at higher frequencies
• Double current density (> 60 A) reduces space and cost
• Same footprint area as SO-8
• 0.8 mm profile, less than half of SO-8
APPLICATIONS
• VRM modules for servers and workstations
• Fixed telecom and data communication systems
RESOURCES
• Datasheets: http://www.vishay.com/mosfets/polarpak-package/
• For technical questions contact: [email protected]
• More featured products: http://www.vishay.com/landingpage/tradeshows/
powermanagement/2011/mosfets.html
One of the World’s Largest Manufacturers of
Discrete Semiconductors and Passive Components
PRODUCT SHEET
1/2
VMN-PT0052-1209
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO
SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V I S H AY I N T E R T E C H N O L O G Y, I N C .
I
INNOVAT
19
62-2012
PolarPAK®
9
G
Top View
8
S
7
S
D
D
1
G
2
Efficiency Comparison
S
3
Bottom View
6
D
5.15 mm
10
D
S
4
D
D
5
S
G
D
6.15 mm
PolarPAK Paralleling
(VIN = (V
12 V , =
V = 1.3 V)
Efficiency Comparison
IN OUT12 V , VOUT = 1.3 V)
88
87
Efficiency (%)
MOSFETs – Dual Heat Dissipation Paths Increase Current Density
AND TEC
O L OGY
PolarPAK ®
N
HN
POWER MOSFETs
O
86
85
84
83
82
81
80
PolarPAK HS & LS
DRAIN
3
SOURCE
4
DRAIN
2
Top-Side Cooling Competition HS & LS
R1
PowerPAK HS & LS
30
60
90
GATE
120
2
1
U1
SIE802DF
U2
SIE802DF
U3
SIE802DF
2
2
2
R2
1
2
R3
1
2
1
Output Current (Amperes)
PART
NUMBER
RDS(ON) (Ω)
Qg
VDS
(V)
VGS
(V)
SiE820DF
20
12
SiE822DF
20
20
0.0034
0.0055
SiE882DF
25
20
0.0014
SiE878DF
25
20
SiE848DF
30
20
SiE860DF
30
SiE862DF
30
SiE844DF
30
20
SiE868DF
40
20
SiE832DF
40
20
0.0055
SiE876DF
60
20
0.0061
SiE818DF
75
20
0.0095
SiE854DF
100
20
0.0142
50
SiE804DF
150
20
0.038
70
SiE836DF
200
30
0.13
27
VGS=10V
(nC)
SAMPLES
VGS=4.5V
VGS=2.5V
VGS=10V
VGS=4.5V
0.0035
0.0064
95
43
Available
52
24
Available
0.0018
96
46
Available
0.0052
0.0068
24
11.2
Available
0.0016
0.0022
92
43
Available
20
0.0021
0.0028
70
34
Available
20
0.0032
0.0041
48
23
Available
0.007
0.010
29
13.1
Available
0.0023
0.0029
95
45
Available
0.007
51
25
Available
SINGLE
51
0.0125
63
Available
33
Available
Available
46
Available
Available
MOSFET AND SCHOTTKY DIODE
SiE726DF
30
20
0.0024
0.0033
105
50
Available
* Target specifications
For list of latest devices visit http://www.vishay.com/mosfets/polarpak-package/
PRODUCT SHEET
2/2
VMN-PT0052-1209
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO
SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000