V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology KEY BENEFITS • Optimized design –– Ultra-low area specific on-resistance (RDS(on)) –– Lower input capacitance (Ciss) –– Reduced capacitive switching losses –– High body diode ruggedness –– Ultra-low gate charge (Qg) –– Avalanche energy rated (UIS) • Optimal efficiency and operation –– Low cost –– Simple gate drive circuitry –– Best in class figure of merit (FOM): RDS(on) x Qg –– Fast switching APPLICATIONS • C onsumer electronics –– Displays (LCD or plasma TV) • S erver and telecom power supplies –– SMPS • Industrial –– Welding, Induction heating, motor drives • Battery chargers • Lighting –– HID (high-intensity discharge) –– LED lighting RESOURCES • • • • Datasheet: links to datasheets located in table on page 2 More featured MOSFET products: http://www.vishay.com/ref/featuredmosfets Full MOSFETs product portfolio: http://www.vishay.com/mosfets For technical questions, contact: [email protected] One of the World’s Largest Manufacturers of Discrete Semiconductors and Passive Components PRODUCT SHEET 1/2 VMN-PT0274-1209 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology MOSFETs - Increased Switching Speed D SERIES MOSFET (400 V) BVDSS (V) (min) ID (A) (TC = 25 °C) RDS(on) (mΩ) (max) Qg (nC) VGS = 10 V (typ) SiHP6N40D 400 6 1000 SiHF6N40D 400 6 1000 SiHP10N40D 400 10 SiHF10N40D 400 SiHP25N40D 400 SiHG25N40D 400 IRF730BPBF 400 IRF740BPBF 400 PART NUMBER PACKAGE SAMPLES 9 TO-220 Available 9 TO-220FP Available 600 15 TO-220 Available 10 600 15 TO-220FP Available 25 170 44 TO-220 Available 25 170 44 TO-247AC Available 6 1000 9 TO-220 Available 10 600 15 TO-220 Available BVDSS (V) (min) ID (A) (TC = 25 °C) RDS(on) (mΩ) (max) Qg (nC) VGS = 10 V (typ) PACKAGE SAMPLES SiHD3N50D 500 3 3200 6 DPAK (TO-252) Available SiHU3N50D 500 3 3200 6 IPAK (TO-251) Available SiHD5N50D 500 5.3 1500 10 DPAK (TO-252) Available SiHP5N50D 500 5.3 1500 10 TO-220 Available SiHU5N50D 500 5.3 1500 10 IPAK (TO-251) Available SiHF5N50D 500 5.3 1500 10 TO-220FP Available SiHP8N50D 500 8.7 850 15 TO-220 Available SiHF8N50D 500 8.7 850 15 TO-220FP Available SiHG14N50D 500 14 400 29 TO-247AC Available SiHP14N50D 500 14 400 29 TO-220 Available SiHF18N50D 500 18 280 38 TO-220FP Available SiHG460B/IRFP460B 500 20 250 85 TO-247AC Available SiHG22N50D 500 22 230 49 TO-247AC Available SiHG32N50D 500 30 150 64 TO-247AC Available SiHS36N50D 500 36 130 83 Super TO-247 Available IRF840BPBF 500 8.7 850 15 TO-220 Available IRF830BPBF 500 5.3 1500 10 TO-220 Available BVDSS (V) (min) ID (A) (TC = 25 °C) RDS(on) (mΩ) (max) Qg (nC) VGS = 10 V (typ) PACKAGE SAMPLES SiHP17N60D 600 17 340 45 TO-220 Available SiHG17N60D 600 17 340 45 TO-247AC Available D SERIES MOSFET (500 V) PART NUMBER D SERIES MOSFET (600 V) PART NUMBER PRODUCT SHEET 2/2 VMN-PT0274-1209 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000