Si2342DS Datasheet

New Product
Si2342DS
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) ()
ID (A)a, e
0.017 at VGS = 4.5 V
6
0.020 at VGS = 2.5 V
6
0.022 at VGS = 1.8 V
6
0.030 at VGS = 1.5 V
6
0.075 at VGS = 1.2 V
6
VDS (V)
8
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Low On-Resistance
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
Qg (Typ.)
6 nC
APPLICATIONS
• Load Switches for Low Voltage Gate Drive
• Low Voltage Operating Circuits
- Gate Drive 1.2 V to 5 V
SOT-23
G
1
D
3
S
(3)
D
Marking Code
2
F2
XXX
Lot Traceability
and Date Code
Top View
G
(1)
Part # Code
(2)
S
N-Channel MOSFET
Ordering Information: Si2342DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
8
Gate-Source Voltage
VGS
±5
TC = 70 °C
ID
TA = 25 °C
6e, b, c
5.8b, c
30
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
IDM
TC = 25 °C
Continuous Source-Drain Diode Current
1.1b, c
2.5
TC = 25 °C
TC = 70 °C
Maximum Power Dissipation
1.6
PD
TA = 25 °C
W
1.3b, c
0.8b, c
- 55 to 150
TA = 70 °C
Operating Junction and Storage Temperature Range
A
2.1
IS
TA = 25 °C
V
6e
6e
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
Soldering Recommendations (Peak Temperature)
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Maximum Junction-to-Ambientb, d
t5s
RthJA
75
100
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
40
50
Unit
°C/W
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 166 °C/W.
e. Package limited.
Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si2342DS
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
8
VDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS , ID = 250 µA
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistance
Forward
a
Transconductancea
RDS(on)
gfs
Max.
mV/°C
- 2.5
0.35
0.8
V
± 100
nA
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V, TJ = 70 °C
10
VDS 5 V, VGS = 4.5 V
Unit
V
10
ID = 250 µA
Gate-Source Leakage
Typ.
20
µA
A
VGS 4.5 V, ID = 7.2 A
0.014
0.017
VGS 2.5 V, ID = 6.7 A
0.016
0.020
VGS = 1.8 V, ID = 6.4 A
0.018
0.022
VGS = 1.5 V, ID = 5.5 A
0.020
0.030
VGS = 1.2 V, ID = 1.3 A
0.025
0.075
VDS = 4 V, ID = 7.2 A
75

S
b
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1070
VDS = 4 V, VGS = 0 V, f = 1 MHz
VDS = 4 V, VGS = 4.5 V, ID = 7.2 A
td(off)
pF
10.5
15.8
6
9
1.6
VDS = 4 V, VGS = 2.5 V, ID = 7.2 A
nC
1
f = 1 MHz
td(on)
tr
385
200
VDD = 4 V, RL = 0.7 
ID  5.8 A, VGEN = 4.5 V, Rg = 1 
tf
2.4
12
24
6
12
14
20
65
98
25
38

ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
TC = 25 °C
2.1
30
IS = 5.8 A, VGS 0
0.82
1.2
A
V
Body Diode Reverse Recovery Time
trr
40
60
ns
Body Diode Reverse Recovery Charge
Qrr
17
26
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 5.8 A, dI/dt = 100 A/µs, TJ = 25 °C
15
25
ns
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si2342DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
30
5
VGS = 5 V thru 2 V
VGS = 1.5 V
4
ID - Drain Current (A)
ID - Drain Current (A)
24
18
12
6
3
TC = 25 °C
2
1
VGS = 1 V
0
TC = 125 °C
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage (V)
2
0
0.3
0.6
0.9
1.2
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
1500
0.040
1200
0.034
VGS = 1.2 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
TC = - 55 °C
0.028
VGS = 1.5 V
VGS = 1.8 V
0.022
Ciss
900
600
VGS = 2.5 V
Coss
300
0.016
Crss
VGS = 4.5 V
0
0.010
0
6
12
18
24
0
30
2
4
6
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
ID = 7.2 A
ID = 7.2 A
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
4.5
VDS = 2 V
3.6
2.7
VDS = 4 V
VDS = 6.4 V
1.8
0.9
1.3
VGS = 4.5 V
1.1
0.9
0.7
0
0
8
3
6
9
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
12
- 50
VGS = 2.5 V
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
125
150
On-Resistance vs. Junction Temperature
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si2342DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
0.03
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID =7.2 A
TJ = 150 °C
1
TJ = 25 °C
0.1
0.025
0.02
TJ = 125 °C
TJ = 25 °C
0.015
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
1
2
3
4
VGS - Gate-to-Source Voltage (V)
5
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
10
0.7
8
Power (W)
VGS(th) (V)
0.55
ID = 250 μA
0.4
0.25
0.1
- 50
6
4
2
- 25
0
25
50
75
100
125
TA = 25 °C
0
0.01
150
0.1
TJ - Temperature (°C)
1
10
100
1000
Time (s)
Threshold Voltage
Single Pulse Power (Junction-to-Ambient)
100
Limited by RDS(on)*
100 μs
ID - Drain Current (A)
10
1 ms
10 ms
1
100 ms
10 s, 1 s
0.1
DC
TC = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si2342DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
12
ID - Drain Current (A)
9
6
Package Limited
3
0
0
25
50
75
100
125
150
0
25
TC - Case Temperature (°C)
Current Derating*
1.0
3.0
2.5
0.8
Power (W)
Power (W)
2.0
1.5
0.6
0.4
1.0
0.2
0.5
0.0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Foot
150
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si2342DS
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 166 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for
Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63302.
www.vishay.com
6
Document Number: 63302
S11-1388-Rev. A, 11-Jul-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOT-23 (TO-236): 3-LEAD
b
3
E1
1
E
2
e
S
e1
D
0.10 mm
C
0.004"
A2
A
C
q
Gauge Plane
Seating Plane
Seating Plane
C
A1
Dim
0.25 mm
L
L1
MILLIMETERS
Min
INCHES
Max
Min
Max
0.044
A
0.89
1.12
0.035
A1
0.01
0.10
0.0004
0.004
A2
0.88
1.02
0.0346
0.040
b
0.35
0.50
0.014
0.020
c
0.085
0.18
0.003
0.007
D
2.80
3.04
0.110
0.120
E
2.10
2.64
0.083
0.104
E1
1.20
1.40
0.047
e
0.95 BSC
e1
L
1.90 BSC
0.40
L1
q
0.0748 Ref
0.60
0.016
0.64 Ref
S
0.024
0.025 Ref
0.50 Ref
3°
0.055
0.0374 Ref
0.020 Ref
8°
3°
8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479
Document Number: 71196
09-Jul-01
www.vishay.com
1
AN807
Vishay Siliconix
Mounting LITTLE FOOTR SOT-23 Power MOSFETs
Wharton McDaniel
Surface-mounted LITTLE FOOT power MOSFETs use integrated
circuit and small-signal packages which have been been modified
to provide the heat transfer capabilities required by power devices.
Leadframe materials and design, molding compounds, and die
attach materials have been changed, while the footprint of the
packages remains the same.
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFETs, (http://www.vishay.com/doc?72286), for the basis
of the pad design for a LITTLE FOOT SOT-23 power MOSFET
footprint . In converting this footprint to the pad set for a power
device, designers must make two connections: an electrical
connection and a thermal connection, to draw heat away from the
package.
ambient air. This pattern uses all the available area underneath the
body for this purpose.
0.114
2.9
0.081
2.05
0.150
3.8
0.059
1.5
0.0394
1.0
0.037
0.95
FIGURE 1. Footprint With Copper Spreading
The electrical connections for the SOT-23 are very simple. Pin 1 is
the gate, pin 2 is the source, and pin 3 is the drain. As in the other
LITTLE FOOT packages, the drain pin serves the additional
function of providing the thermal connection from the package to
the PC board. The total cross section of a copper trace connected
to the drain may be adequate to carry the current required for the
application, but it may be inadequate thermally. Also, heat spreads
in a circular fashion from the heat source. In this case the drain pin
is the heat source when looking at heat spread on the PC board.
Figure 1 shows the footprint with copper spreading for the SOT-23
package. This pattern shows the starting point for utilizing the
board area available for the heat spreading copper. To create this
pattern, a plane of copper overlies the drain pin and provides
planar copper to draw heat from the drain lead and start the
process of spreading the heat so it can be dissipated into the
Document Number: 70739
26-Nov-03
Since surface-mounted packages are small, and reflow soldering
is the most common way in which these are affixed to the PC
board, “thermal” connections from the planar copper to the pads
have not been used. Even if additional planar copper area is used,
there should be no problems in the soldering process. The actual
solder connections are defined by the solder mask openings. By
combining the basic footprint with the copper plane on the drain
pins, the solder mask generation occurs automatically.
A final item to keep in mind is the width of the power traces. The
absolute minimum power trace width must be determined by the
amount of current it has to carry. For thermal reasons, this
minimum width should be at least 0.020 inches. The use of wide
traces connected to the drain plane provides a low-impedance
path for heat to move away from the device.
www.vishay.com
1
Application Note 826
Vishay Siliconix
0.049
(1.245)
0.029
0.022
(0.559)
(0.724)
0.037
(0.950)
(2.692)
0.106
RECOMMENDED MINIMUM PADS FOR SOT-23
0.053
(1.341)
0.097
(2.459)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index Return to Index
APPLICATION NOTE
Document Number: 72609
Revision: 21-Jan-08
www.vishay.com
25
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000