ALT6702 HELP4 UMTS PCS (Band 2) LTE/WCDMA/CDMA Multi-Mode PAM TM Data Sheet - Rev 2.3 FEATURES • Mixed-Mode HSPA, EVDO, LTE Compliant • 4th Generation HELPTM technology • High Efficiency (R99 waveform): • 39 % @ POUT = +28.6 dBm • 35 % @ POUT = +17.5 dBm • 23 % @ POUT = +13.5 dBm • 26 % @ POUT = +9 dBm • 13 % @ POUT = +3.5 dBm ALT6702 • Low Quiescent Current: 2 mA • Low Leakage Current in Shutdown Mode: <5 µA • Internal Voltage Regulator M45 Package 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module • Integrated “daisy chainable” directional coupler with CPLIN and CPLOUT port • Internal DC blocks on RF IN/OUT ports • Optimized for a 50 Ω System mode with low leakage current increase handset talk and standby time. A “daisy chainable” directional coupler is integrated in the module, thus eliminating the need of an external coupler. The self-contained 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system. • 1.8 V Control Logic • RoHS Compliant Package, 260 oC MSL-3 APPLICATIONS • Band 2 WCDMA/HSPA Wireless Devices • Band 2 LTE Wireless Devices GNDatSlug(pad) • Band Class 1 and 14 CDMA/EVDO Wireless Devices • Band 25 LTE Devices PRODUCT DESCRIPTION The ALT6702 HELP4 TM PA is a 4th generation HELP TM product for LTE and WCDMA devices operating in UMTS PCS (Band 2) and for CDMA devices operating in Band Class 1 and Band Class 14. This PA incorporates ANADIGICS’ HELP4 TM technology to deliver exceptional efficiency at low power levels and low quiescent current without the need for external voltage regulators or converters. The device is manufactured using advanced InGaPPlus TM HBT technology offering state-of-the-art reliability, temperature stability, and ruggedness. Three selectable bias modes that optimize efficiency for different output power levels and a shutdown VBATT 1 RFIN 2 VMODE2 3 VMODE1 VEN 08/2011 10 VCC 9 RFOUT 8 CPLIN 4 7 GND 5 6 CPLOUT CPL BiasControl VoltageRegulation Figure 1: Block Diagram ALT6702 VBATT 1 RFIN 2 9 RFOUT VMODE2 3 8 CPLIN VMODE1 4 7 GND VEN 5 6 CPLOUT GND 10 Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 VBATT BatteryVoltage 2 RFIN RFInput 3 VMODE2 ModeControlVoltage2 4 VMODE1 ModeControlVoltage1 5 VEN 6 CPLOUT 7 GND Ground 8 CPLIN CouplerInput 9 RFOUT RFOutput 10 VCC PAEnableVoltage CouplerOutput SupplyVoltage Data Sheet - Rev 2.3 08/2011 VCC ALT6702 ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT SupplyVoltage(VCC) 0 +5 V BatteryVoltage(VBATT) 0 +6 V ControlVoltages(VMODE1,VMODE2,VEN) 0 +3.5 V RFInputPower(PIN) - +10 dBm -40 +150 °C StorageTemperature(TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT OperatingFrequency(f) 1850 - 1915 MHz SupplyVoltage(VCC) +3.1 +3.4 +4.35 V POUT <+28.6dBm EnableVoltage(VEN) +1.35 0 +1.8 - +3.1 +0.5 V PA "on" PA"shutdown" ModeControlVoltage(VMODE1,VMODE2) +1.35 0 +1.8 - +3.1 +0.5 V LowBiasMode HighBiasMode WCDMA/UMTSOutputPower R99,HPM HSPA(MPR=0),HPM LTE(2) R99,MPM LTE&HSPA(MPR=0),MPM(2) R99,LPM LTE&HSPA(MPR=0),LPM(2) 27.8(1) 26.8(1) 26.6(1) - 28.6 27.6 27.4 17.5 16.5 9.0 8.0 - CDMAOutputPower IS-95,HPM IS-95,MPM IS-95,LPM 27.2(1) - 28.0 16.5 8.0 -30 - CaseTemperature(TC) dBm - dBm +90 °C COMMENTS 3GPPTS34.121-1,Rel8 TableC.11.1.3forWCDMA, SUBTEST 1 TS36.101Rel8forLTE CDMA2000,RC-1 The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1)For Operation at 3.1 V, POUT is derated by 0.8 dB. (2)LTE Waveform: Up to 20 MHz, 18 RB’s, QPSK. Data Sheet - Rev 2.3 08/2011 3 ALT6702 Table 4: Electrical Specifications - LTE Operation = 10 MHz QPSK 12 RB (Start = 0) (TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT POUT VMODE1 VMODE2 25 16 8 27.5 19 10.5 30 22 13 dB POUT=+27.4dBm POUT=+16.5dBm POUT=+8dBm 0V 1.8V 1.8V 0V 0V 1.8V ACLR E-UTRA at10MHzoffset - -39 -39 -40 -34 -34 -34 dBc POUT=+27.4dBm POUT=+16.5dBm POUT=+8dBm 0V 1.8V 1.8V 0V 0V 1.8V ACLR UTRA at +7.5MHzoffset - -39 -40 -40 -36 -36 -36 dBc POUT=+27.4dBm POUT=+16.5dBm POUT=+8dBm 0V 1.8V 1.8V 0V 0V 1.8V - -59 -59 -60 -40 -40 -40 dBc POUT=+27.4dBm POUT=+16.5dBm POUT=+8dBm 0V 1.8V 1.8V 0V 0V 1.8V Power-AddedEfficiency 31 26 19 34 30 23 - % POUT=+27.4dBm POUT=+16.5dBm POUT=+8dBm 0V 1.8V 1.8V 0V 0V 1.8V OuiescentCurrent(Icq) LowBiasMode - 2 3.5 mA throughVCCpin 1.8V 1.8V ModeControlCurrent - 0.08 0.15 mA throughVMODEpins,VMODE1,2=+1.8V EnableCurrent - 0.04 0.1 mA throughVENpin,VEN=+1.8V BATTCurrent - 0.8 1.5 mA throughVBATTpin,VMODE1,2=+1.8V LeakageCurrent - <5 8 A VBATT=VCC=+4.35V VEN=0V,VMODE1,2=0V NoisePower - -135 -135 -146 -133 - Harmonics 2fo 3fo,4fo - -44 -50 -35 -42 dBc CouplingFactor - 20 - dB Directivity - 20 - dB CouplerIn_Out DaisyChainInsertionLoss - <0.25 - dB 698Mhzto2620MHz Pin8to9,ShutdownMode Gain ACLR UTRA at +12.5MHzoffset SpuriousOutputLevel (allspuriousoutputs) Loadmismatchstresswithno permanentdegradationorfailure 1930MHzto1990MHz dBm/Hz GPSBand ISM Band POUT +27.4dBm - - <-70 dBc POUT <+27.4dBm In-bandloadVSWR<5:1 Out-of-bandloadVSWR<10:1 Appliesoveralloperatingranges 8:1 - - VSWR Appliesoverfulloperatingrange Notes: 1. ACLR and Efficiency are measured at 1880 MHz. 4 COMMENTS Data Sheet - Rev 2.3 08/2011 ALT6702 Table 5: Electrical Specifications - WCDMA Operation (R99 waveform) (TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system) MIN TYP MAX UNIT 25 16 8 27.5 19 10.5 30 22 13 ACLR1at5MHzoffset - -41 -43 -43 ACLR2at10MHzoffset - Power-AddedEfficiency 35 31 22 - PARAMETER Gain SpuriousOutputLevel (allspuriousoutputs) Loadmismatchstresswithno permanentdegradationorfailure COMMENTS POUT VMODE1 VMODE2 dB POUT=+28.6dBm POUT=+17.5dBm POUT=+9dBm 0V 1.8V 1.8V 0V 0V 1.8V -37.5 -37.5 -37.5 dBc POUT=+28.6dBm POUT=+17.5dBm POUT=+9dBm 0V 1.8V 1.8V 0V 0V 1.8V -54 -55 -59 -48 -48 -48 dBc POUT=+28.6dBm POUT=+17.5dBm POUT=+9dBm 0V 1.8V 1.8V 0V 0V 1.8V 39 35 23 26 13 - % POUT=+28.6dBm POUT=+17.5dBm POUT=+13.5dBm POUT=+9dBm POUT=+3.5dBm 0V 1.8V 1.8V 1.8V 1.8V 0V 0V 0V 1.8V 1.8V - - -70 dBc 8:1 - - VSWR Data Sheet - Rev 2.3 08/2011 POUT <+28.6dBm In-bandloadVSWR<5:1 Out-of-bandloadVSWR<10:1 Appliesoveralloperatingconditions Appliesoverfulloperatingrange 5 ALT6702 Table 6: Electrical Specifications - CDMA Operation (CDMA2000, RC-1) (TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system) PARAMETER COMMENTS MIN TYP MAX UNIT 25 16 8 27.5 19 10.5 30 22 13 dB POUT=+28dBm 0V POUT=+16.5dBm 1.8V POUT=+8dBm 1.8V 0V 0V 1.8V AdjacentChannelPower at +1.25MHzoffset PrimaryChannelBW-1.23MHz AdjacentChannelBW=30kHz - -50 -56 -57 -46.5 -46.5 -46.5 dBc POUT=+28dBm 0V POUT=+16.5dBm 1.8V POUT=+8dBm 1.8V 0V 0V 1.8V AdjacentChannelPower at+1.98MHz PrimaryChannelBW=1.23MHz AdjacentChannelBW=30kHz - -56 <-60 <-60 -53 -53 -53 dBc 0V POUT=+28dBm POUT=+16.5dBm 1.8V POUT=+8dBm 1.8V 0V 0V 1.8V 33 27 18 37 31 22 - % 0V POUT=+28dBm POUT=+16.5dBm 1.8V 1.8V POUT=+8dBm 0V 0V 1.8V - - -70 dBc 8:1 - - VSWR Gain Power-AddedEfficiency SpuriousOutputLevel (allspuriousoutputs) Loadmismatchstresswithno permanentdegradationorfailure 6 Data Sheet - Rev 2.3 08/2011 POUT VMODE1 VMODE2 POUT<+28dBm,In-BandVSWR <5:1,Out-Of-BandVSWR<10:1 Appliestoalloperatingconditions Appliesoverfulloperatingrange ALT6702 PERFORMANCE DATA PLOTS: (LTE Operation at 1880 MHz and 50 V system) 30 FigureFigure 4: LTE Gain over Temperature 4: LTE Gain(dB) (dB) over Temperature (Vbatt=VCC=3.4V) (VBATT = VCC = +3.4 V) Figure 5: LTE Gain (dB) over Voltage Figure 5: LTE Gain (dB) over Voltage (TC(Tc=25C = 25 8C) ) 30 -30C3.4Vcc 25C3.2Vcc 25C3.4Vcc 25 25 90C3.4Vcc 25C4.2Vcc 20 Gain (dB) Gain (dB) 20 15 10 5 15 10 5 0 0 5 10 15 20 25 0 30 0 Pout (dBm) Figure 6: LTE PAE (%) over Temperature Figure 6: LTE PAE (%) over Temperature (VBATT = VCC = +3.4 V) (Vbatt=VCC=3.4V) 40 40 25C3.4Vcc 90C3.4Vcc 30 5 10 15 Pout (dBm) 20 25 30 Figure 7: LTE PAE (%) over Voltage Figure 7: LTE PAE (%) over Voltage (T(Tc=25C) C = 25 8C) 45 -303.4cc 35 25C3.2Vcc 25C3.4Vcc 35 25C4.2Vcc 30 25 Efficiency (%) Efficiency (%) 25C3.4Vcc 20 15 10 25 20 15 10 5 5 0 0 0 5 10 15 Pout (dBm) 20 25 0 30 Figure 8:Figure8:LTEACRL1(dBc)overTemperature LTE ACLR1 (dBc) over Temperature (VBATT (Vbatt=VCC=3.4V) = VCC = +3.4 V) -20 -20 5 10 15 Pout (dBm) 20 25 30 FigureFigure9:LTEACLR1(dBc)overVoltage 9: LTE ACLR1 (dBc) over Voltage (TC(Tc=25C) = 25 8C) -30C3.4Vcc -25 -25 25C3.4Vcc 25C3.2Vcc 25C3.4Vcc 90C3.4Vcc -30 ACLR1(5MHzdBc) ACLR1(5MHzdBc) -30 -35 -40 -45 25C4.2Vcc -35 -40 -45 -50 -50 -55 -55 0 5 10 15 Pout (dBm) 20 25 30 -60 0 Data Sheet - Rev 2.3 08/2011 5 10 15 Pout (dBm) 20 25 30 7 ALT6702 APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com to the VMODE pins. The Bias Control table below lists the recommended modes of operation for various applications. Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to the VEN, VMODE1 and VMODE2 voltages. Three operating modes are recommended to optimize current consumption. High Bias/High Power operating mode is for POUT levels > 16 dBm. At ~17dBm - 8 dBm, the PA could be switched to Medium Power Mode. For POUT levels < ~9 dBm, the PA could be switched to Low Power Mode for extremely low current consumption. Bias Modes The power amplifier may be placed in either Low, Medium or High Bias modes by applying the appropriate logic level (see Operating Ranges table) Table 7: Bias Control APPLICATION POUT LEVELS BIAS MODE VEN VMODE1 VMODE2 VCC VBATT Lowpower (LowBiasMode) <+9dBm Low +1.8V +1.8V +1.8V 3.1-4.35V >3.1V Medpower (MediumBiasMode) >8dBm <+17dBm Low +1.8V +1.8V 0V 3.1-4.35V >3.1V Highpower (HighBiasMode) >+16dBm High +1.8V 0V 0V 3.1-4.35V >3.1V - Shutdown 0V 0V 0V 3.1-4.35V >3.1V Shutdown VVBATT BATT VCC C5 C5 2.2µF 2.2µF GNDatslug GNDatslug 1 2 RFIN RFIN C1 C1 0.1µF 0.1µF VMODE2 VMODE2 VMODE1 VMODE1 VEN VEN 3 4 5 C3 33pF 10 1 10 VBATT VBATT VCC VCC 9 2 IN 9 RF RFOUT RFIN VMODE2 3 VMODE2 VMODE1 4 VEN 5 CPLIN GND VMODE1 CPLOUT VEN RFOUT 8 CPLIN 7 6GND 8CPLIN 7 CPLOUT 6 Figure 3: Evaluation Board Schematic 8 Data Sheet - Rev 2.3 08/2011 VCC C3 C4 C2 C4C2 0.1µF ceramic2.2µF ceramic 0.1µF 33pF 2.2µF RFOUT RFOUT CPLIN CPLOUT CPLOUT ALT6702 PACKAGE OUTLINE Figure 4: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Pin 1 Identifier Date Code YY= Year WW= Work Week 6702R Part Number LLLLNN Lot Number YYWWCC Country Code(CC) Figure 5: Branding Specification - M45 Package Data Sheet - Rev 2.3 08/2011 9 ALT6702 COMPONENT PACKAGING Pin 1 Figure 6: Tape & Reel Packaging Table 8: Tape & Reel Dimensions 10 PACKAGETYPE TAPEWIDTH POCKETPITCH REEL CAPACITY MAX REEL DIA 3mmx3mmx1mm 12mm 4mm 2500 7" Data Sheet - Rev 2.3 08/2011 ALT6702 ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION ALT6702RM45Q7 -30oCto+90oC RoHSCompliant10Pin 3mmx3mmx1mm TapeandReel,2500piecesperReel SurfaceMountModule ALT6702RM45P9 -30oCto+90oC RoHSCompliant10Pin 3mmx3mmx1mm PartialTapeandReel SurfaceMountModule COMPONENTPACKAGING ANADIGICS 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 11 Data Sheet - Rev 2.3 08/2011