Product Datasheet

ALT6702
HELP4 UMTS PCS (Band 2)
LTE/WCDMA/CDMA Multi-Mode PAM
TM
Data Sheet - Rev 2.3
FEATURES
• Mixed-Mode HSPA, EVDO, LTE Compliant
• 4th Generation HELPTM technology
• High Efficiency (R99 waveform):
• 39 % @ POUT = +28.6 dBm
• 35 % @ POUT = +17.5 dBm
• 23 % @ POUT = +13.5 dBm
• 26 % @ POUT = +9 dBm
• 13 % @ POUT = +3.5 dBm
ALT6702
• Low Quiescent Current: 2 mA
• Low Leakage Current in Shutdown Mode: <5 µA
• Internal Voltage Regulator
M45 Package
10 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
• Integrated “daisy chainable” directional coupler
with CPLIN and CPLOUT port
• Internal DC blocks on RF IN/OUT ports
• Optimized for a 50 Ω System
mode with low leakage current increase handset
talk and standby time. A “daisy chainable” directional
coupler is integrated in the module, thus eliminating
the need of an external coupler. The self-contained 3 mm x 3 mm x 1 mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 Ω system.
• 1.8 V Control Logic
• RoHS Compliant Package, 260 oC MSL-3
APPLICATIONS
• Band 2 WCDMA/HSPA Wireless Devices
• Band 2 LTE Wireless Devices
GNDatSlug(pad)
• Band Class 1 and 14 CDMA/EVDO Wireless
Devices
• Band 25 LTE Devices
PRODUCT DESCRIPTION
The ALT6702 HELP4 TM PA is a 4th generation
HELP TM product for LTE and WCDMA devices
operating in UMTS PCS (Band 2) and for CDMA
devices operating in Band Class 1 and Band Class
14. This PA incorporates ANADIGICS’ HELP4 TM
technology to deliver exceptional efficiency at low
power levels and low quiescent current without the
need for external voltage regulators or converters.
The device is manufactured using advanced InGaPPlus TM HBT technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
Three selectable bias modes that optimize efficiency
for different output power levels and a shutdown
VBATT
1
RFIN
2
VMODE2
3
VMODE1
VEN
08/2011
10
VCC
9
RFOUT
8
CPLIN
4
7
GND
5
6
CPLOUT
CPL
BiasControl
VoltageRegulation
Figure 1: Block Diagram
ALT6702
VBATT
1
RFIN
2
9
RFOUT
VMODE2
3
8
CPLIN
VMODE1
4
7
GND
VEN
5
6
CPLOUT
GND
10
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
2
PIN
NAME
DESCRIPTION
1
VBATT
BatteryVoltage
2
RFIN
RFInput
3
VMODE2
ModeControlVoltage2
4
VMODE1
ModeControlVoltage1
5
VEN
6
CPLOUT
7
GND
Ground
8
CPLIN
CouplerInput
9
RFOUT
RFOutput
10
VCC
PAEnableVoltage
CouplerOutput
SupplyVoltage
Data Sheet - Rev 2.3
08/2011
VCC
ALT6702
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
SupplyVoltage(VCC)
0
+5
V
BatteryVoltage(VBATT)
0
+6
V
ControlVoltages(VMODE1,VMODE2,VEN)
0
+3.5
V
RFInputPower(PIN)
-
+10
dBm
-40
+150
°C
StorageTemperature(TSTG)
Stresses in excess of the absolute ratings may cause permanent damage.
Functional operation is not implied under these conditions. Exposure
to absolute ratings for extended periods of time may adversely affect
reliability.
Table 3: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
OperatingFrequency(f)
1850
-
1915
MHz
SupplyVoltage(VCC)
+3.1
+3.4
+4.35
V
POUT <+28.6dBm
EnableVoltage(VEN)
+1.35
0
+1.8
-
+3.1
+0.5
V
PA "on"
PA"shutdown"
ModeControlVoltage(VMODE1,VMODE2)
+1.35
0
+1.8
-
+3.1
+0.5
V
LowBiasMode
HighBiasMode
WCDMA/UMTSOutputPower
R99,HPM
HSPA(MPR=0),HPM
LTE(2)
R99,MPM
LTE&HSPA(MPR=0),MPM(2)
R99,LPM
LTE&HSPA(MPR=0),LPM(2)
27.8(1)
26.8(1)
26.6(1)
-
28.6
27.6
27.4
17.5
16.5
9.0
8.0
-
CDMAOutputPower
IS-95,HPM
IS-95,MPM
IS-95,LPM
27.2(1)
-
28.0
16.5
8.0
-30
-
CaseTemperature(TC)
dBm
-
dBm
+90
°C
COMMENTS
3GPPTS34.121-1,Rel8
TableC.11.1.3forWCDMA,
SUBTEST 1
TS36.101Rel8forLTE
CDMA2000,RC-1
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over
the conditions defined in the electrical specifications.
Notes:
(1)For Operation at 3.1 V, POUT is derated by 0.8 dB.
(2)LTE Waveform: Up to 20 MHz, 18 RB’s, QPSK.
Data Sheet - Rev 2.3
08/2011
3
ALT6702
Table 4: Electrical Specifications - LTE Operation = 10 MHz QPSK 12 RB (Start = 0)
(TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNIT
POUT
VMODE1
VMODE2
25
16
8
27.5
19
10.5
30
22
13
dB
POUT=+27.4dBm
POUT=+16.5dBm
POUT=+8dBm
0V
1.8V
1.8V
0V
0V
1.8V
ACLR E-UTRA
at10MHzoffset
-
-39
-39
-40
-34
-34
-34
dBc
POUT=+27.4dBm
POUT=+16.5dBm
POUT=+8dBm
0V
1.8V
1.8V
0V
0V
1.8V
ACLR UTRA
at +7.5MHzoffset
-
-39
-40
-40
-36
-36
-36
dBc
POUT=+27.4dBm
POUT=+16.5dBm
POUT=+8dBm
0V
1.8V
1.8V
0V
0V
1.8V
-
-59
-59
-60
-40
-40
-40
dBc
POUT=+27.4dBm
POUT=+16.5dBm
POUT=+8dBm
0V
1.8V
1.8V
0V
0V
1.8V
Power-AddedEfficiency
31
26
19
34
30
23
-
%
POUT=+27.4dBm
POUT=+16.5dBm
POUT=+8dBm
0V
1.8V
1.8V
0V
0V
1.8V
OuiescentCurrent(Icq)
LowBiasMode
-
2
3.5
mA
throughVCCpin
1.8V
1.8V
ModeControlCurrent
-
0.08
0.15
mA
throughVMODEpins,VMODE1,2=+1.8V
EnableCurrent
-
0.04
0.1
mA
throughVENpin,VEN=+1.8V
BATTCurrent
-
0.8
1.5
mA
throughVBATTpin,VMODE1,2=+1.8V
LeakageCurrent
-
<5
8
A
VBATT=VCC=+4.35V
VEN=0V,VMODE1,2=0V
NoisePower
-
-135
-135
-146
-133
-
Harmonics
2fo
3fo,4fo
-
-44
-50
-35
-42
dBc
CouplingFactor
-
20
-
dB
Directivity
-
20
-
dB
CouplerIn_Out
DaisyChainInsertionLoss
-
<0.25
-
dB
698Mhzto2620MHz
Pin8to9,ShutdownMode
Gain
ACLR UTRA
at +12.5MHzoffset
SpuriousOutputLevel
(allspuriousoutputs)
Loadmismatchstresswithno
permanentdegradationorfailure
1930MHzto1990MHz
dBm/Hz GPSBand
ISM Band
POUT +27.4dBm
-
-
<-70
dBc
POUT <+27.4dBm
In-bandloadVSWR<5:1
Out-of-bandloadVSWR<10:1
Appliesoveralloperatingranges
8:1
-
-
VSWR
Appliesoverfulloperatingrange
Notes:
1. ACLR and Efficiency are measured at 1880 MHz.
4
COMMENTS
Data Sheet - Rev 2.3
08/2011
ALT6702
Table 5: Electrical Specifications - WCDMA Operation (R99 waveform)
(TC = +25 °C, VCC = +3.4 V, VBATT = +3.4 V, VEN = +1.8 V, 50 Ω system)
MIN
TYP
MAX
UNIT
25
16
8
27.5
19
10.5
30
22
13
ACLR1at5MHzoffset
-
-41
-43
-43
ACLR2at10MHzoffset
-
Power-AddedEfficiency
35
31
22
-
PARAMETER
Gain
SpuriousOutputLevel
(allspuriousoutputs)
Loadmismatchstresswithno
permanentdegradationorfailure
COMMENTS
POUT
VMODE1
VMODE2
dB
POUT=+28.6dBm
POUT=+17.5dBm
POUT=+9dBm
0V
1.8V
1.8V
0V
0V
1.8V
-37.5
-37.5
-37.5
dBc
POUT=+28.6dBm
POUT=+17.5dBm
POUT=+9dBm
0V
1.8V
1.8V
0V
0V
1.8V
-54
-55
-59
-48
-48
-48
dBc
POUT=+28.6dBm
POUT=+17.5dBm
POUT=+9dBm
0V
1.8V
1.8V
0V
0V
1.8V
39
35
23
26
13
-
%
POUT=+28.6dBm
POUT=+17.5dBm
POUT=+13.5dBm
POUT=+9dBm
POUT=+3.5dBm
0V
1.8V
1.8V
1.8V
1.8V
0V
0V
0V
1.8V
1.8V
-
-
-70
dBc
8:1
-
-
VSWR
Data Sheet - Rev 2.3
08/2011
POUT <+28.6dBm
In-bandloadVSWR<5:1
Out-of-bandloadVSWR<10:1
Appliesoveralloperatingconditions
Appliesoverfulloperatingrange
5
ALT6702
Table 6: Electrical Specifications - CDMA Operation (CDMA2000, RC-1)
(TC = +25 °C, VBATT = VCC = +3.4 V, VENABLE = +1.8 V, 50 Ω system)
PARAMETER
COMMENTS
MIN
TYP
MAX
UNIT
25
16
8
27.5
19
10.5
30
22
13
dB
POUT=+28dBm
0V
POUT=+16.5dBm 1.8V
POUT=+8dBm
1.8V
0V
0V
1.8V
AdjacentChannelPower
at +1.25MHzoffset
PrimaryChannelBW-1.23MHz
AdjacentChannelBW=30kHz
-
-50
-56
-57
-46.5
-46.5
-46.5
dBc
POUT=+28dBm
0V
POUT=+16.5dBm 1.8V
POUT=+8dBm
1.8V
0V
0V
1.8V
AdjacentChannelPower
at+1.98MHz
PrimaryChannelBW=1.23MHz
AdjacentChannelBW=30kHz
-
-56
<-60
<-60
-53
-53
-53
dBc
0V
POUT=+28dBm
POUT=+16.5dBm 1.8V
POUT=+8dBm
1.8V
0V
0V
1.8V
33
27
18
37
31
22
-
%
0V
POUT=+28dBm
POUT=+16.5dBm 1.8V
1.8V
POUT=+8dBm
0V
0V
1.8V
-
-
-70
dBc
8:1
-
-
VSWR
Gain
Power-AddedEfficiency
SpuriousOutputLevel
(allspuriousoutputs)
Loadmismatchstresswithno
permanentdegradationorfailure
6
Data Sheet - Rev 2.3
08/2011
POUT
VMODE1
VMODE2
POUT<+28dBm,In-BandVSWR
<5:1,Out-Of-BandVSWR<10:1
Appliestoalloperatingconditions
Appliesoverfulloperatingrange
ALT6702
PERFORMANCE DATA PLOTS:
(LTE Operation at 1880 MHz and 50 V system)
30
FigureFigure
4: LTE
Gain
over
Temperature
4: LTE
Gain(dB)
(dB) over
Temperature
(Vbatt=VCC=3.4V)
(VBATT
= VCC = +3.4 V)
Figure
5: LTE Gain (dB) over Voltage
Figure 5: LTE Gain (dB) over Voltage
(TC(Tc=25C
= 25 8C)
)
30
-30C3.4Vcc
25C3.2Vcc
25C3.4Vcc
25
25
90C3.4Vcc
25C4.2Vcc
20
Gain (dB)
Gain (dB)
20
15
10
5
15
10
5
0
0
5
10
15
20
25
0
30
0
Pout (dBm)
Figure 6: LTE PAE (%) over Temperature
Figure 6: LTE PAE (%) over Temperature
(VBATT
= VCC = +3.4 V)
(Vbatt=VCC=3.4V)
40
40
25C3.4Vcc
90C3.4Vcc
30
5
10
15
Pout (dBm)
20
25
30
Figure 7: LTE PAE (%) over Voltage
Figure 7: LTE PAE (%) over Voltage
(T(Tc=25C)
C = 25 8C)
45
-303.4cc
35
25C3.2Vcc
25C3.4Vcc
35
25C4.2Vcc
30
25
Efficiency (%)
Efficiency (%)
25C3.4Vcc
20
15
10
25
20
15
10
5
5
0
0
0
5
10
15
Pout (dBm)
20
25
0
30
Figure 8:Figure8:LTEACRL1(dBc)overTemperature
LTE ACLR1 (dBc) over Temperature
(VBATT (Vbatt=VCC=3.4V)
= VCC = +3.4 V)
-20
-20
5
10
15
Pout (dBm)
20
25
30
FigureFigure9:LTEACLR1(dBc)overVoltage
9: LTE ACLR1 (dBc) over Voltage
(TC(Tc=25C)
= 25 8C)
-30C3.4Vcc
-25
-25
25C3.4Vcc
25C3.2Vcc
25C3.4Vcc
90C3.4Vcc
-30
ACLR1(5MHzdBc)
ACLR1(5MHzdBc)
-30
-35
-40
-45
25C4.2Vcc
-35
-40
-45
-50
-50
-55
-55
0
5
10
15
Pout (dBm)
20
25
30
-60
0
Data Sheet - Rev 2.3
08/2011
5
10
15
Pout (dBm)
20
25
30
7
ALT6702
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
to the VMODE pins. The Bias Control table below lists
the recommended modes of operation for various
applications.
Shutdown Mode
The power amplifier may be placed in a shutdown mode
by applying logic low levels (see Operating Ranges
table) to the VEN, VMODE1 and VMODE2 voltages.
Three operating modes are recommended to optimize
current consumption. High Bias/High Power operating
mode is for POUT levels > 16 dBm. At ~17dBm - 8 dBm,
the PA could be switched to Medium Power Mode. For
POUT levels < ~9 dBm, the PA could be switched to Low
Power Mode for extremely low current consumption.
Bias Modes
The power amplifier may be placed in either Low,
Medium or High Bias modes by applying the
appropriate logic level (see Operating Ranges table)
Table 7: Bias Control
APPLICATION
POUT
LEVELS
BIAS
MODE
VEN
VMODE1
VMODE2
VCC
VBATT
Lowpower
(LowBiasMode)
<+9dBm
Low
+1.8V
+1.8V
+1.8V
3.1-4.35V
>3.1V
Medpower
(MediumBiasMode)
>8dBm
<+17dBm
Low
+1.8V
+1.8V
0V
3.1-4.35V
>3.1V
Highpower
(HighBiasMode)
>+16dBm
High
+1.8V
0V
0V
3.1-4.35V
>3.1V
-
Shutdown
0V
0V
0V
3.1-4.35V
>3.1V
Shutdown
VVBATT
BATT
VCC
C5
C5
2.2µF
2.2µF
GNDatslug
GNDatslug
1
2
RFIN
RFIN
C1 C1
0.1µF
0.1µF
VMODE2
VMODE2
VMODE1
VMODE1
VEN
VEN
3
4
5
C3
33pF
10
1
10
VBATT
VBATT VCC
VCC
9
2 IN
9
RF
RFOUT
RFIN
VMODE2
3
VMODE2
VMODE1
4
VEN
5
CPLIN
GND
VMODE1
CPLOUT
VEN
RFOUT
8
CPLIN
7
6GND
8CPLIN
7
CPLOUT 6
Figure 3: Evaluation Board Schematic
8
Data Sheet - Rev 2.3
08/2011
VCC
C3
C4
C2
C4C2
0.1µF
ceramic2.2µF ceramic
0.1µF
33pF 2.2µF
RFOUT
RFOUT
CPLIN
CPLOUT
CPLOUT
ALT6702
PACKAGE OUTLINE
Figure 4: M45 Package Outline - 10 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Pin 1 Identifier
Date Code
YY= Year WW= Work Week
6702R
Part Number
LLLLNN
Lot Number
YYWWCC
Country Code(CC)
Figure 5: Branding Specification - M45 Package
Data Sheet - Rev 2.3
08/2011
9
ALT6702
COMPONENT PACKAGING
Pin 1
Figure 6: Tape & Reel Packaging
Table 8: Tape & Reel Dimensions
10
PACKAGETYPE
TAPEWIDTH
POCKETPITCH
REEL CAPACITY
MAX REEL DIA
3mmx3mmx1mm
12mm
4mm
2500
7"
Data Sheet - Rev 2.3
08/2011
ALT6702
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ALT6702RM45Q7
-30oCto+90oC
RoHSCompliant10Pin
3mmx3mmx1mm TapeandReel,2500piecesperReel
SurfaceMountModule
ALT6702RM45P9
-30oCto+90oC
RoHSCompliant10Pin
3mmx3mmx1mm PartialTapeandReel
SurfaceMountModule
COMPONENTPACKAGING
ANADIGICS
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice.
The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to
change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed
to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers
to verify that the information they are using is current before placing orders.
warning
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product
in any such application without written consent is prohibited.
11
Data Sheet - Rev 2.3
08/2011