43

NTE42 (NPN) & NTE43 (PNP)
Silicon Complementary Transistors
Dual, Differential Amp, High Gain,
Low Noise, Common Emitter
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Collector Power Dissipation (Per Unit), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Total Power Dissipation, PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +125C
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
Collector−Emitter Breakdown Voltage
V(BR)CEO
IC = 100A, RBE =
50
−
−
V
Collector−Base Breakdown Voltage
V(BR)CBO
IC = 10A, IE = 0
50
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO
IE = 10A, IC = 0
5
−
−
V
ICBO
VCB = 35V, IE = 0
−
−
0.1
A
ICEO
VCE = 35V, RBE = 
−
−
10
A
Emitter−Cutoff Current
IEBO
VEB = 2V, IC = 0
−
−
0.1
A
DC Current Gain
hFE
VCE = 6V, IC = 1mA
400
−
800
VCE(sat)
IC = 10mA, IB = 1mA
−
−
0.6
V
−
1
10
mV
Collector−Cutoff Current
Collector−Emitter Saturation Voltage
Base−Emitter Voltage Differential
Small Signal Current Gain Ratio
Transistion Frequency
VBE1−VBE2 VCE = 6V, IC = 1mA
hfe1/hfe2
VCE = 6V, IC = 1mA
0.8
0.98
1.0
fT
VCE = 6V, IE = 1mA
−
150
−
MHz
Collector Output Capacitance
Cob
VCB = 6V, IE = 0, f = 1MHz
−
2.5
−
pF
Noise Figure
NF
VCE = 6V, IE = 0, f = 1kHz,
RG = 10k
−
0.5
−
dB
Noise Voltage
RMS
NV1
VCE = 10V, IE = 1mA,
Rg = 100k, GV = 80dB
−
100
−
mV
−
0.5
−
V
Peak
NV2
Rev. 5−13
.320 (8.13)
Max
.220
(5.59)
Max
B C E C B
.414
(10.52)
Max
1
5
.050 (1.27)
.142 (3.6) Max