2566

NTE2566 (NPN) & NTE2567 (PNP)
Silicon Complementary Transistors
High Current, High Speed Switch
To−220 Full Pack
Features:
D Low Saturation Voltage
D Fast Switching Speed
Absolute Maximum Ratings: (TC = +25C unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Collector Power Dissipation, PC
TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W
TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
−
0.1
mA
0.1
mA
Collector Cutoff Current
ICBO
VCB = 40V, IE = 0
−
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
−
DC Current Gain
hFE
VCE = 2V, IC = 1A
100
−
200
VCE = 2V, IC = 5A
30
−
−
fT
VCE = 5V, IC = 1A
−
10
−
MHz
VCE(sat)
IC = 6A, IB = 0.6A
−
−
0.4
V
Gain Bandwidth Product
Collector−Emitter Saturation Voltage
Collector−Base Breakdown Voltage
V(BR)CBO IC = 1mA, IE = 0
60
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = 
50
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
6
−
−
V
Rev. 6−15
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter
Symbol
Turn−On Time
NTE2566
ton
NTE2567
Storage Time
NTE2566
tstg
Test Conditions
IC = 5A, IB1 = 20A,
IB2 = −20A, VCC = 20V,
Pulse Width = 20s,
Duty Cycle  1%
NTE2567
Collector Current Fall Time
NTE2566
tf
NTE2567
.402 (10.2) Max
Min
Typ
Max
−
0.1
−
−
0.2
−
−
1.2
−
−
0.4
−
−
0.05
−
−
0.1
−
.173 (4.4) Max
.224 (5.7) Max
.122 (3.1)
Dia
.114 (2.9) Max
.295
(7.5)
.165
(4.2)
.669
(17.0)
Max
B
C
E
.531
(13.5)
Min
.100 (2.54)
.059 (1.5) Max
NOTE: Tab is isolated
Unit
s
s
s
s
s
s