2580

NTE2580
Silicon NPN Transistor
High Voltage, High Current Switch
Features:
D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide ASO Range
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Note 1. Pulse Test: Pulsed Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 400V, IE = 0
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
–
–
10
µA
DC Current Gain
hFE
VCE = 5V, IC = 800mA
20
–
50
VCE = 5V, IC = 4A
10
–
–
VCE = 5V, IC = 10mA
10
–
–
VCE = 10V, IC = 800mA
–
20
–
MHz
Cob
VCB = 10V, f = 1MHz
–
80
–
pF
VCE(sat)
IC = 4A, IB = 800mA
–
–
0.8
V
Gain–Bandwidth Product
Output Capacitance
Collector Emitter Saturation Voltage
fT
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Base Emitter Saturation Voltage
VBE(sat)
Test Conditions
IC = 4A, IB = 800mA
Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0
Collector Emitter Breakdown Voltage
V(BR)CEO IC = 5mA, RBE = ∞
Emitter Base Breakdown Voltage
V(BR)EBO IE = 1mA, IC = 0
Collector Emitter Sustaining Voltage
VCEX(sus) IC = 3A, IB1 = –0.3A, L = 1mH,
IB2 = –1.2A, Clamped
Turn–On Time
ton
Storage Time
tstg
Fall Time
VCC = 200V, IC = 5A,
IB1 = 1A, IB2 = – 2A,
RL = 40Ω
tf
.402 (10.2)
.035
(0.9)
Min
Typ
Max
Unit
–
–
1.5
V
500
–
–
V
400
–
–
V
7
–
–
V
400
–
–
V
–
0.5
–
µs
–
2.5
–
µs
–
0.3
–
µs
.177 (4.5)
.051 (1.3)
.346
(8.8)
B
C
E
.433
(11.0)
.019 (0.5)
.100 (2.54)