NTE2580 Silicon NPN Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide ASO Range Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.65W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Note 1. Pulse Test: Pulsed Width ≤ 300µs, Duty Cycle ≤ 10%. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 400V, IE = 0 – – 10 µA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 10 µA DC Current Gain hFE VCE = 5V, IC = 800mA 20 – 50 VCE = 5V, IC = 4A 10 – – VCE = 5V, IC = 10mA 10 – – VCE = 10V, IC = 800mA – 20 – MHz Cob VCB = 10V, f = 1MHz – 80 – pF VCE(sat) IC = 4A, IB = 800mA – – 0.8 V Gain–Bandwidth Product Output Capacitance Collector Emitter Saturation Voltage fT Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Base Emitter Saturation Voltage VBE(sat) Test Conditions IC = 4A, IB = 800mA Collector Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 Collector Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞ Emitter Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 Collector Emitter Sustaining Voltage VCEX(sus) IC = 3A, IB1 = –0.3A, L = 1mH, IB2 = –1.2A, Clamped Turn–On Time ton Storage Time tstg Fall Time VCC = 200V, IC = 5A, IB1 = 1A, IB2 = – 2A, RL = 40Ω tf .402 (10.2) .035 (0.9) Min Typ Max Unit – – 1.5 V 500 – – V 400 – – V 7 – – V 400 – – V – 0.5 – µs – 2.5 – µs – 0.3 – µs .177 (4.5) .051 (1.3) .346 (8.8) B C E .433 (11.0) .019 (0.5) .100 (2.54)