NTE2545 (NPN) & NTE2546 (PNP) Silicon Complementary Transistors Darlington, High Speed Driver Features: D High Speed Switching D Wide ASO Range D High Gain Bandwidth Product Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Collector Power Dissipation, PC TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75W TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 40V, IE = 0 – – 0.1 mA Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 3.0 mA DC Current Gain hFE VCE = 2V, IC = 2.5A fT VCE = 5V, IC = 2.5A – 200 – MHz IC = 2.5A, IB = 5mA – 0.9 – V – 1.0 1.5 V – – 2.0 V 70 – – V 60 – – V Gain–Bandwidth Product Collector Emitter Saturation Voltage NTE2545 VCE(sat) NTE2546 Base Emitter Saturation Voltage VBE(sat) IC = 2.5A, IB = 5mA Collector Base Breakdown Voltage V(BR)CBO IC = 5mA, IE = 0 Collector Emitter Breakdown Voltage V(BR)CEO IC = 50mA, RBE = ∞ 2000 5000 – Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified) Parameter Symbol Turn–On Time ton Storage Time NTE2545 tstg Test Conditions VCC = 20V, VBE = –5V, 500IB1 = –500IB2 = IC = 2A, Pulse Width = 50µs, Duty Cycle ≤ 1%, Note 1 NTE2546 Fall Time tf Min Typ Max Unit – 0.3 – µs – 1.2 – µs – 1.3 – µs – 0.2 – µs Note 1. For NTE2546, the polarity is reversed. NTE2545 (NPN) .420 (10.67) Max C B .110 (2.79) E .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max NTE2546 (PNP) .500 (12.7) Min .070 (1.78) Max C Base Emitter B .100 (2.54) E Collector/Tab