NTE5386

NTE5386 & NTE5387
Silicon Controlled Rectifier (SCR)
for High Speed Switching,
700 Amp, TO200AC
Maximum Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified)
Repetitive Peak Voltages, VDRM, VRRM
NTE5386 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5387 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Non−Repetitive Peak Off−State Voltage, VDSM
NTE5386 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5387 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Non−Repetitive Peak Reverse Blocking Voltage, VRSM
NTE5386 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
NTE5387 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V
Average On−State Current, IT(AV)
(+55°C heatsink temperature, double side cooled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 745A
(+85°C heatsink temperature, single side cooled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 261A
RMS On−State Current (+25°C heatsink temperature, double side cooled), IT(RMS) . . . . . . . 1535A
Continuous On−State Current (+25°C heatsink temperature, double side cooled), IT . . . . . . 1180A
Peak One−Cycle Surge (Non−Repetitive) On−State Current, ITSM
(t = 10ms, 60% VRRM re−applied) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9500A
(t = 10ms, VR ≤ 10V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10450A
Maximum Permissible Surge Energy (VR ≤ 10V), I2t
(t = 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 546000A2sec
(t = 3ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400000A2sec
Peak Forward Gate Current (Anode Positive with Respect to Cathode), IFGM . . . . . . . . . . . . . . . 20A
Peak Forward Gate Voltage (Anode Positive with Respect to Cathode), VFGM . . . . . . . . . . . . . . 23V
Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4W
Peak Gate Power (100μs Pulse Width), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W
Rate of Rise of Off−State Voltage (To 80% VDRM, Gate Open−Circuit), dv/dt . . . . . . . . . . . 200V/μs
Rate of Rise of On−State Current, di/dt
(Gate Drive 20V, 20Ω with tr ≤ 1μs, Anode voltage ≤ 80% VDRM)
Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/μs
Non−Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/μs
Operating Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Thermal Resistance, Junction−to−Heatsink, RthJHS
Double Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.047°C/W
Single Side Cooled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.094°C/W
Maximum Ratings and Electrical Characteristics (Cont’d): (TJ = +125°C unless otherwise specified)
Peak On−State Voltage (ITM = 1500A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.9V
Forward Conduction Threshold Voltage, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.43V
Forward Conduction Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.31mΩ
Repetitive Peak Off−State Current (At Rated VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA
Repetitive Peak Reverse Current (At Rated VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mA
Maximum Gate Current Required to Fire All Devices (TJ = +25°C, VA = 6V, IA = 2A), IGT . . 300mA
Maximum Gate Voltage Required to Fire All Devices (TJ = +25°C, VA = 6V, IA = 2A), VGT . . . . . 3V
Maximum Holding Current (TJ = +25°C, VA = 6V, IA = 1A), IH . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Maximum Gate Voltage Which Will Not Trigger Any Device, VGD . . . . . . . . . . . . . . . . . . . . . . . 0.25V
Typical Stored Charge (ITM = 800A, dir/dt 50A/μs, VRM = 50V, 50% Chord Value), Qrr . . . . 150μC
Circuit Commutated Turn−Off Time Available Down To, tq
(ITM = 800A, dir/dt = 50A/μs, VRM = 50V)
Maximum (dv/dt = 200V/μs to 80% VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20−35μs
Typical (dv/dt = 20V/μs to 80% VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15−30μs
8.500 (21.59)
Max
2.290
(58.16)
Max
For No. 6 Screws
Cathode
1.343 (34.13) Max
1.060
(26.92)
Max
Cathode Potential (Red)
Gate (White)
.040 (1.01) Min
2.090 (53.08) Max
Marking
Anode