DIM2400ESM12-A000 DIM2400ESM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5536-2.1 FEATURES ■ 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5529-3.0 March 2003 KEY PARAMETERS VCES (typ) VCE(sat)* (max) IC (max) IC(PK) *(measured at the power busbars and not the auxiliary terminals) APPLICATIONS ■ High Reliability Inverters ■ Motor Controllers ■ Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM2400ESM12-A000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This module is optimised for applications requiring high thermal cycling capability. 1200V 2.2V 2400A 4800A External connection C1 C2 C3 E2 E3 Aux C G Aux E E1 External connection Fig. 1 Single switch circuit diagram The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMATION Order As: DIM2400ESM12-A000 Note: When ordering, please use the whole part number. Outline type code: E (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 1/10 DIM2400ESM12-A000 ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol Test Conditions Parameter VCES Collector-emitter voltage VGES Gate-emitter voltage VGE = 0V - Max. Units 1200 V ±20 V Continuous collector current Tcase = 85˚C 2400 A IC(PK) Peak collector current 1ms, Tcase = 115˚C 4800 A Pmax Max. transistor power dissipation Tcase = 25˚C, Tj = 150˚C 20830 W Diode I2t value (IGBT arm) VR = 0, tp = 10ms, Tvj = 125˚C 900 kA2s Visol Isolation voltage - per module Commoned terminals to base plate. AC RMS, 1 min, 50Hz 2500 V QPD Partial discharge - per module IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS 10 PC IC I2t 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM2400ESM12-A000 THERMAL AND MECHANICAL RATINGS Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Test Conditions Parameter Symbol Rth(j-c) AlN AlSiC 32mm 20mm 175 Thermal resistance - transistor Continuous dissipation - Min. Typ. Max. Units - - 6 ˚C/kW - - 13.3 ˚C/kW - - 6 ˚C/kW junction to case Rth(j-c) Thermal resistance - diode Continuous dissipation junction to case Rth(c-h) Tj Tstg - Thermal resistance - case to heatsink Mounting torque 5Nm (per module) (with mounting grease) Junction temperature Transistor - - 150 ˚C Diode - - 125 ˚C –40 - 125 ˚C Mounting - M6 - - 5 Nm Electrical connections - M4 - - 2 Nm Electrical connections - M8 - - 10 Nm - Storage temperature range Screw torque Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 3/10 DIM2400ESM12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise. Min. Typ. Max. Units VGE = 0V, VCE = VCES - - 3 mA VGE = 0V, VCE = VCES, Tcase = 125˚C - - 75 mA Gate leakage current VGE = ±20V, VCE = 0V - - 12 µA VGE(TH) Gate threshold voltage IC = 120mA, VGE = VCE 4.5 5.5 6.5 V VCE(sat)† Collector-emitter saturation voltage VGE = 15V, IC = 2400A - 2.2 2.8 V VGE = 15V, IC = 2400A, , Tcase = 125˚C - 2.6 3.3 V Symbol ICES IGES Parameter Collector cut-off current Test Conditions IF Diode forward current DC - - 2400 A IFM Diode maximum forward current tp = 1ms - - 4800 A VF† Diode forward voltage IF = 2400A - 2.1 2.4 V IF = 2400A, Tcase = 125˚C - 2.1 2.4 V VCE = 25V, VGE = 0V, f = 1MHz - 270 - nF Cies Input capacitance LM Module inductance - - 10 - nH Internal transistor resistance - - 0.09 - mΩ RINT SCData Short circuit. ISC Tj = 125˚C, VCC = 900V, I1 - 16500 - A tp ≤ 10µs, VCE(max) = VCES – L*. di/dt I2 - 13500 - A IEC 60747-9 Note: † Measured at the power busbars and not the auxiliary terminals) L* is the circuit inductance + LM 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM2400ESM12-A000 ELECTRICAL CHARACTERISTICS Tcase = 25˚C unless stated otherwise Min. Typ. Max. Units IC = 2400A - 1370 - ns Fall time VGE = ±15V - 230 - ns EOFF Turn-off energy loss VCE = 600V - 520 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 1Ω - 250 - ns L ~ 50nH - 230 - ns Parameter Symbol td(off) tf tr Turn-off delay time Rise time Test Conditions EO Turn-on energy loss - 180 - mJ Qg Gate charge - 26 - µC Qrr Diode reverse recovery charge IF = 2400A, VR = 50% VCES, - 310 - µC Irr Diode reverse current dIF/dt = 9500A/µs - 1000 - A - 150 - mJ Min. Typ. Max. Units IC = 2400A - 1570 - ns Fall time VGE = ±15V - 230 - ns EOFF Turn-off energy loss VCE = 600V - 600 - mJ td(on) Turn-on delay time RG(ON) = RG(OFF) = 1Ω - 360 - ns L ~ 50nH - 290 - ns - 200 - mJ IF = 2400A, VR = 50% VCES, - 540 - µC dIF/dt = 8500A/µs - 1260 - A - 260 - mJ EREC Diode reverse recovery energy Tcase = 125˚C unless stated otherwise Parameter Symbol td(off) tf tr Turn-off delay time Rise time EON Turn-on energy loss Qrr Diode reverse recovery charge Irr Diode reverse current EREC Diode reverse recovery energy Test Conditions Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 5/10 DIM2400ESM12-A000 TYPICAL CHARACTERISTICS 4800 4800 Common emitter Tcase = 25˚C Common emitter Tcase = 125˚C 4200 Vce is measured at power busbars 4200 Vce is measured at power busbars and not the auxiliary terminals and not the auxiliary terminals 3600 Collector current, IC - (A) Collector current, IC - (A) 3600 3000 3000 2400 2400 1800 1800 1200 1200 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 600 0 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector-emitter voltage, Vce - (V) 3.5 VGE = 10V VGE = 12V VGE = 15V VGE = 20V 600 0 0 4.0 0.5 Fig. 3 Typical output characteristics 700 400 300 200 100 Eon Eoff Erec 500 1000 1500 2000 2500 Collector current, IC - (A) Fig. 5 Typical switching energy vs collector current 6/10 5.0 Tc = 125˚C, Vcc = 600V, IC = 2400A 600 Switching energy, Esw - (mJ) Switching energy, Esw - (mJ) Tc = 125˚C, Vcc = 600V, Rg = 1 Ohm 500 0 0 4.5 Fig. 4 Typical output characteristics 700 600 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Collector-emitter voltage, Vce - (V) 500 400 300 200 100 0 0.8 Eon Eoff Erec 1 1.2 1.4 1.6 Gate resistance, Rg - (Ohms) Fig. 6 Typical switching energy vs gate resistance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM2400ESM12-A000 4800 5000 Tj = 25˚C Tj = 125˚C 4500 Tcase = 125˚C Vge = 15V Rg = 1 Ohm 4000 VF is measured at power busbars and not the auxiliary terminals 4200 3600 Collector current, IC (A) Forward current, IF - (A) 3500 3000 2400 1800 3000 2500 2000 1500 1200 1000 600 500 0 0 Module IC Chip IC 0.5 1.0 1.5 2.0 2.5 3.0 0 0 100 200 300 400 500 600 700 800 9001000110012001300 Collector emitter voltage, Vce - (V) 3.5 Forward voltage, VF - (V) Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 2100 100 Tcase = 125˚C Transient thermal impedance, Zth (j-c) - (°C/kW ) Reverse recovery current, Irr - (A) 1800 1500 1200 900 600 Diode 10 Transistor 1 0.1 300 IGBT Diode 0 0 200 400 600 800 1000 1200 Reverse voltage, VR - (V) Fig. 9 Diode reverse bias safe operating area 1400 0.01 0.001 Ri (˚C/KW) τi (ms) Ri (˚C/KW) τi (ms) 0.01 1 0.19 0.12 0.41 0.11 0.1 Pulse width, tp - (s) 3 1.88 47.15 4.32 48.75 1 4 2.60 257.21 5.51 256.75 10 Fig. 10 Transient thermal impedance Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 2 1.33 3.89 3.09 4.24 7/10 DIM2400ESM12-A000 5000 4500 4000 DC collector current, IC - (A) 3500 3000 2500 2000 1500 1000 500 0 0 20 40 60 80 100 Case temperature, Tcase - (˚C) 120 140 Fig. 11 DC current rating vs case temperature 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com DIM2400ESM12-A000 PACKAGE DETAILS For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Nominal weight: 1700g Module outline type code: E Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com 9/10 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 52. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRODUCED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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