SAMWIN SW730 N-channel MOSFET Features BVDSS : 400V TO-220 ID ■ High ruggedness ■ RDS(ON) (Max 1.0Ω)@VGS=10V ■ Gate Charge (Typ 32nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 6.5A RDS(ON) : 1.0ohm 1 2 2 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. It is mainly suitable for half bridge or full bridge resonant topology like a electronic ballast, and also low power switching mode power appliances. Order Codes Item 1 Sales Type SW P 730 Marking SW730 Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID Parameter Drain to Source Voltage Value Unit 400 V Continuous Drain Current (@TC=25oC) 6.5 A Continuous Drain Current (@TC=100oC) 3.8 A 26 A ± 30 V IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 450 mJ EAR Repetitive Avalanche Energy (note 1) 9.2 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5.3 V/ns 92 W 0.74 W/oC -55 ~ + 150 oC 300 oC PD TSTG, TJ TL (note 1) Total power dissipation (@TC Derating Factor above =25oC) 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case Rthcs Thermal resistance, Case to Sink Rthja Thermal resistance, Junction to ambient Mar. 2011. Rev. 2.0 Value Min. Typ. Max. 1.35 Unit oC/W oC/W 0.5 62.5 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. oC/W 1/7 SAMWIN SW730 Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit 400 - - V Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC - 0.54 - V/oC - 1 uA Drain to source leakage current VDS=400V, VGS=0V - IDSS VDS=320V, TC=125oC - - 20 uA Gate to source leakage current, forward VGS=30V, VDS=0V - - 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V - - -100 nA 2.0 - 4.0 V 0.8 1.0 Ω 570 750 160 215 IGSS On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID = 3.25A Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 30 40 td(on) Turn on delay time 28 36 74 96 128 230 Fall time 30 50 Qg Total gate charge 32 42 Qgs Gate-source charge Qgd Gate-drain charge tr td(off) tf Rising time Turn off delay time VGS=0V, VDS=25V, f=1MHz VDS=200V, ID=6.5A, RG=25Ω VDS=320V, VGS=10V, ID=6.5A 4 pF ns nC 10 Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit - - 6.5 A - - 26 A IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=6.5A, VGS=0V - - 1.5 V Trr Reverse recovery time - 320 - ns Qrr Breakdown voltage temperature IS=6.5A, VGS=0V, dIF/dt=100A/us - 1.46 - uC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 19.4mH, IAS = 6.5A, VDD = 50V, RG=50Ω, Starting TJ = 25oC 3. ISD ≤ 6.5A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2/7 SAMWIN SW730 Fig. 1. On-state characteristics Fig. 2. Transfer characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 o 150 C 0 10 o 25 C o -55 C ، طNotes : 1. 250¥ىs Pulse Test 2. TC = 25،ة 0 10 ، طNotes : 1. VDS = 30V 2. 250¥ىs Pulse Test -1 0 10 1 10 10 2 3 4 VDS, Drain-Source Voltage [V] 5 6 7 8 9 10 VGS, Gate-Source Voltage [V] Fig. 3. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage 2.5 IDR, Reverse Drain Current [A] RDS(ON), Drain-Source On-Resistance [¥]ط 3.0 2.0 VGS = 10V 1.5 1.0 VGS = 20V 0.5 ، طNote : TJ = 25،ة 1 10 0 10 150،ة 25،ة ، طNotes : 1. VGS = 0V 2. 250¥ىs Pulse Test -1 0.0 10 0 2 4 6 8 10 ID, Drain Current [A] Fig. 5. Capacitance characteristics (Non-Repetitive) 12 14 16 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage [V] Fig. 6. Gate charge characteristics Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 3/7 SAMWIN SW730 Fig 7. Breakdown Voltage Variation vs. Junction Temperature Fig. 8. On resistance variation vs. junction temperature 3.0 RDS(on), (Normalized) 1.1 1.0 ، طNotes : 1. VGS = 0 V 0.9 2. ID = 250 ¥ىA 0.8 -100 -50 0 50 100 150 Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.5 2.0 1.5 1.0 ، طNotes : 1. VGS = 10 V 0.5 2. ID = 3 A 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig. 9. Maximum drain current vs. case temperature. Fig. 10. Maximum safe operating area 2 10 7 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 6 5 4 3 2 100 s 1 10 1 ms 10 ms DC 0 10 ، طNotes : o 1. TC = 25 C o 2. TJ = 150 C 1 3. Single Pulse 0 25 -1 50 75 100 125 10 150 -1 0 10 1 10 TC, Case Temperature [،]ة 2 10 10 3 10 VDS, Drain-Source Voltage [V] Fig. 11. Transient thermal response curve Z¥èJC (t), Thermal Response 0 10 D=0.5 ، طNotes : 1. Z¥èJC(t) = 1.28 ،ة/W Max. 0.2 2. Duty Factor, D=t1/t2 0.1 3. TJM - TC = PDM * Z¥èJC(t) -1 10 0.05 0.02 0.01 single pulse -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Square Wave Pulse Duration [sec] Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 4/7 SAMWIN SW730 Fig. 12. Gate charge test circuit & waveform VGS Same type as DUT QG VDS QGD QGS DUT VGS 1mA Charge Fig. 13. Switching time test circuit & waveform VDS RL RG 90% VDS VDD VIN 10VIN DUT 10% 10% td(on) td(off) tr tON tf tOFF Fig. 14. Unclamped Inductive switching test circuit & waveform 1 EAS = L BVDSS IAS BVDSS - VDD IAS VDS RG 2 BVDSS L X IAS2 X VDD ID(t) 10VIN DUT VDS(t) tp time Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 5/7 SAMWIN SW730 Fig. 15. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 6/7 SAMWIN SW730 REVISION HISTORY Revision No. Changed Characteristics Responsible Date Issuer REV 1.0 Origination, First Release Alice Nie 2007.12.05 XZQ REV 2.0 Updated the format of datasheet and added Order Codes. Alice Nie 2011.03.24 XZQ WWW.SEMIPOWER.COM.CN 西安芯派电子科技有限公司 深圳市南方芯源科技有限公司 地址：西安市高新区高新一路25号创新大厦MF6 地址：深圳市福田区天安数码城时代大厦A座2005 电话：029 - 88253717 传真：029 - 88251977 电话：0755 - 83981818 传真：0755 - 83476838 Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 7/7