3320

NTE3320
Insulated Gate Bipolar Transistor
N−Channel Enhancement Mode,
High Speed Switch
TO3P Type Package
Features:
D Fourth Generation IGBT
D Enhancement Mode Type
D High Speed
D Low Switching Loss
D Low Saturation Voltage
Applications:
D High Power Switching
Absolute Maximum Ratings: (TA = +25_C unless otherwise specified)
Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate−Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V
Collector Current, IC
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A
Collector Power Dissipation (TC = +25_C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150_C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55_ to +150_C
Thermal Resistance, Junction−to−Case, Rth(j−c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.521_C/W
Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8Nwm
Electrical Characteristics: (TA = +25_C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Leakage Current
IGES
VGE = $20V, VCE = 0
−
−
$500
nA
Collector Cutoff Current
ICES
VCE = 600V, VGE = 0
−
−
1.0
mA
Gate−Emitter Cutoff Voltage
VGE(off)
IC = 5 mA, VCE = 5V
3.5
−
6.5
V
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 50A, VGE = 15V
−
2.0
2.45
V
VCE = 10V, VGE = 0, f = 1MHz
−
7900
−
pF
Inductive Load
−
0.09
−
ms
VCC = 300V, IC = 50 A,
VGG = 15V, RG = 13 W
−
0.07
−
ms
−
0.24
−
ms
td (off)
−
0.30
−
ms
tf
−
0.05
−
ms
Turn−Off Time
toff
−
0.43
−
ms
Turn−On Switching Loss
Eon
−
1.30
−
mJ
Turn−Off Switching Loss
Eoff
−
1.34
−
mJ
Input Capacitance
Turn−On Delay Time
Rise Time
Turn−On Time
Turn−Off Delay Time
Fall Time
Cies
td (on)
tr
ton
Rev. 8−14
C
G
E
.810(20.57)
Max
.204 (5.2)
.236
(6.0)
1.030
(26.16)
.137 (3.5)
Dia Max
.098
(2.5)
.215 (5.45)
.787
(20.0)
.040 (1.0)
G
C
E
Note: Collector connected to heat sink.
.023
(0.6)