NTE NTE3321

NTE3321
Insulated Gate Bipolar Transistor
N–Channel Enhancement Mode,
High Speed Switch
Features:
D High Input Impedance
D High Speed
D Low Saturation Voltage
D Enhancement Mode
Applications:
D High Power Switching
Absolute Maximum Raings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Gate–Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Collector Current, IC
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A
Collector Power Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.625°C/W
Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8Nm
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Leakage Current
IGES
VGE = ±20V, VCE = 0
–
–
±500
nA
Collector Cutoff Current
ICES
VCE = 600V, VGE = 0
–
–
1.0
mA
600
–
–
V
Collector–Emitter Breakdown Voltage
V(BR)CES IC = 2mA, VGE = 0
Gate–Emitter Cutoff Voltage
VGE(off)
IC = 80mA, VCE = 5V
3.0
–
6.0
V
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 10A, VGE = 15V
–
–
2.0
V
IC = 80A, VGE = 15V
–
2.5
3.5
V
VCE = 10V, VGE = 0, f = 1MHz
–
5500
–
pF
VCC = 300V
–
0.30
0.60
µs
ton
–
0.50
0.80
µs
tf
–
0.25
0.40
µs
toff
–
0.70
1.00
µs
Input Capacitance
Rise Time
Turn–On Time
Fall Time
Turn–Off Time
Cies
tr
C
G
E
.810(20.57)
Max
.204 (5.2)
.236
(6.0)
1.030
(26.16)
.137 (3.5)
Dia Max
.098
(2.5)
.215 (5.45)
.787
(20.0)
.040 (1.0)
G
C
E
Note: Collector connected to heat sink.
.023
(0.6)