3322

NTE3322
Insulated Gate Bipolar Transistor
N−Channel Enhancement Mode,
High Speed Switch
TO3P Type Package
Features:
D Enhancement Mode Type
D FRD Included Between Emitter and Collector
D High Speed
D Low Saturation Voltage
Applications:
D High Power Switching
Absolute Maximum Ratings: (TA = +25_C unless otherwise specified)
Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V
Gate−Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +25V
Collector Current, IC
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A
Emitter−Collector Foward Current, IEC
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120A
Collector Power Dissipation (TC = +25_C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150_C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55_ to +150_C
Thermal Resistance, Junction−to−Case, RthJC
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.74_C/W
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0_C/W
Screw Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8Nwm
Electrical Characteristics: (TA = +25_C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate Leakage Current
IGES
VGE = $25V, VCE = 0
−
−
$500
nA
Collector Cutoff Current
ICES
VCE = 900V, VGE = 0
−
−
1.0
mA
Gate−Emitter Cutoff Voltage
VGE(off)
IC = 60mA, VCE = 5V
3.0
−
6.0
V
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 10A, VGE = 15V
−
1.6
2.2
V
IC = 60A, VGE = 15V
−
2.1
2.7
V
Rev. 8−14
Electrical Characteristics (Cont’d): (TA = +25_C unless otherwise specified)
Parameter
Symbol
Input Capacitance
Min
Typ
Max
Unit
VCE = 10V, VGE = 0, f = 1MHz
−
3800
−
pF
VCC = 600V
−
0.35
0.60
ms
ton
−
0.46
0.75
ms
tf
−
0.25
0.40
ms
toff
−
0.60
0.70
ms
IEC = 15A, VGE = 0
−
1.5
2.0
V
IF = 15A, VGE = 0, di/dt = −20A/ms
−
0.7
2.5
ms
Cies
Rise Time
tr
Turn−On Time
Fall Time
Turn−Off Time
Emitter−Collector Forward Voltage
Reverse Recovery Time
VECF
trr
Test Conditions
C
G
E
.810(20.57)
Max
.204 (5.2)
.236
(6.0)
1.030
(26.16)
.137 (3.5)
Dia Max
.098
(2.5)
.215 (5.45)
.787
(20.0)
.040 (1.0)
G
C
E
Note: Collector connected to heat sink.
.023
(0.6)