HD-6409/883 TM CMOS Manchester Encoder-Decoder March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HD-6409/883 Manchester Encoder-Decoder (MED) is a high speed, low power device manufactured using selfaligned silicon gate technology. The device is intended for use in serial data communication, and can be operated in either of two modes. In the converter mode, the MED converts Nonreturn-to-Zero code (NRZ) into Manchester code and decodes Manchester code into Nonreturn-to-Zero code. For serial data communication, Manchester code does not have some of the deficiencies inherent in Nonreturn-to-Zero code. For instance, use of the MED on a serial line eliminates DC components, provides clock recovery, and gives a relatively high degree of noise immunity. Because the MED converts the most commonly used code (NRZ) to Manchester code, the advantages of using Manchester code are easily realized in a serial data link. • Converter or Repeater Mode • Independent Manchester Encoder and Decoder Operation • Static to One Megabit/Sec Data Rate Guaranteed • Low Bit Error Rate • Digital PLL Clock Recovery • On Chip Oscillator • Low Operating Power: 50mW Typical at +5V • Available in 20 Lead Dual-In-Line and 20 Pad LCC Package Ordering Information PART NUMBER TEMPERATURE RANGE HD1-6409/883 -55oC to +125oC CERDIP F20.3 HD4-6409/883 -55oC to +125oC CLCC J20.A PACKAGE PKG. NO. In the Repeater mode, the MED accepts Manchester code input and reconstructs it with a recovered clock. This minimizes the effects of noise on a serial data link. A digital phase lock loop generates the recovered clock. A maximum data rate of 1MHz requires only 50mW of power. Manchester code is used in magnetic tape recording and in fiber optic communication, and generally is used where data accuracy is imperative. Because it frames blocks of data, the HD-6409/883 easily interfaces to protocol controllers. Pinouts 19 BOO BOO 2 VCC 20 VCC BZI 1 BOI BZI BOI HD4-6409/883 (CLCC) TOP VIEW UDI HD1-6409/883 (CERDIP) TOP VIEW 3 2 1 20 19 17 SS SRST 6 16 ECLK 14 MS NVM 7 15 CTS 8 13 OX DCLK 8 14 MS 9 12 IX 5 16 ECLK SRST 6 15 CTS NVM 7 DCLK RST GND 10 11 CO CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002. All Rights Reserved 135 9 10 11 12 13 OX 5 SDO IX SDO 17 SS CO 18 BZO 18 BZO 4 GND 4 3 RST SD/CDS UDI SD/CDS FN2959.1 HD-6409/883 Block Diagram SDO NVM BOI BZI BOO DATA INPUT LOGIC OUTPUT SELECT LOGIC 5-BIT SHIFT REGISTER AND DECODER BZO UDI COMMAND SYNC GENERATOR EDGE DETECTOR CTS SRST RST RESET SD SD/CDS INPUT/ OUTPUT SELECT MANCHESTER ENCODER MS IX OX OSCILLATOR ECLK DCLK COUNTER CIRCUITS CO SS Logic Symbol 17 SS CO SD/CDS ECLK MS RST SDO DCLK NVM SRST 11 13 CLOCK GENERATOR 19 4 16 12 ENCODER 18 15 OX IX BOO BZO CTS 14 9 CONTROL 8 2 1 BOI 7 3 BZI UDI 5 6 DECODER 136 HD-6409/883 Absolute Maximum Ratings Thermal Information Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V Input, Output or I/O Voltage Applied. . . . . GND -0.5V to VCC +0.5V ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θJA ( oC/W) θJC (oC/W) CERDIP Package . . . . . . . . . . . . . . . . 83 23 CLCC Package . . . . . . . . . . . . . . . . . . 95 26 Storage Temperature Range . . . . . . . . . . . . . . . . .-65oC to +150oC Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . +175oC Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . +300oC Operating Conditions Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +125oC Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times. . . . . . . . . . . . . . . . . . . . . . . . . . 50ns Max Sync. Transition Span (t2) . . . . . . . . . 1.5 DBP Typical, (Notes 1, 2) Short Data Transition Span (t4) . . . . . 0.5 DBP Typical, (Notes 1, 2) Long Data Transition Span (t5) . . . . . 1.0 DBP Typical, (Notes 1, 2) Zero Crossing Tolerance (tCD5) . . . . . . . . . . . . . . . . . . . . . (Note 3) Die Characteristics Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 Gates CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. DBP - Data Bit Period. Clock Rate = 16X, one DBP = 16 Clock Cycles; Clock Rate = 32X; one DBP = 32 Clock Cycles. 2. The input conditions specified are nominal values, the actual input waveforms transition spans may vary by ±2 IX clock cycles (16X mode) or ±6 IX clock cycles (32X mode). 3. The maximum zero crossing tolerance is ±2 IX clock cycles (16X mode) or ±6 IX clock cycles (32X mode) from the nominal. TABLE 1. HD-6409/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested LIMITS PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS Logic “1” Input Voltage VIH VCC = 4.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC 70% VCC - V Logic “0” Input voltage VIL VCC = 4.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC - 20% VCC V Logic “1” Input Voltage (RST) VIHR VCC = 5.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC VCC -0.5 - V Logic “0” Input Voltage (RST) VILR VCC = 4.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC - GND +0.5 V Logic “1” Input Voltage (IX) VIHC VCC = 5.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC VCC -0.5 - V Logic “0” Input Voltage (IX) VlLC VCC = 4.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC - GND +0.5 V Input Leakage Current (Except IX) II VIN = VCC or GND VCC = 5.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC -1.0 +1.0 µA Input Leakage Current (IX) II VlN = VCC or GND VCC = 5.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC -20 +20 µA I/O Leakage Current IO VOUT = VCC or GND VCC = 5.5V 1, 2, 3 -55oC ≤ TA ≤ +125oC -10 +10 µA Output HIGH Voltage (All except OX) VOH IOH = -2.0mA VCC = 4.5V (Note 1) 1, 2, 3 -55oC ≤ TA ≤ +125oC VCC -0.4 - V Output LOW Voltage (All except OX) VOL IOL = +2.0mA VCC = 4.5V (Note 1) 1, 2, 3 -55oC ≤ TA ≤ +125oC - 0.4 V 137 HD-6409/883 TABLE 1. HD-6409/883 DC ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued) Device Guaranteed and 100% Tested LIMITS PARAMETER SYMBOL CONDITIONS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS - 100 µA Standby Power Supply Current ICCSB VIN = VCC or GND, VCC = 5.5V, Outputs Open 1, 2, 3 -55oC ≤ TA ≤ +125oC Operating Power Supply Current ICCOP f = 16.0MHz, VIN = VCC or GND VCC = 5.5V, CL = 50pF 1, 2, 3 -55oC ≤ TA ≤ +125oC - 18.0 mA 7, 8 -55oC ≤ TA ≤ +125oC - - - Functional Test FT (Note 2) NOTES: 1. Interchanging of force and sense conditions is permitted. 2. Tested as follows: f = 16MHz, VIH = 70% VCC, VIL = 20% VCC, VOH ≥ VCC/2, and VOL ≤ VCC/2, VCC = 4.5V and 5.5V. TABLE 2. HD-6409/883 AC ELECTRICAL PERFORMANCE SPECIFICATIONS Device Guaranteed and 100% Tested LIMITS PARAMETER (NOTE 1) CONDITIONS SYMBOL GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS Clock Frequency fC 9, 10, 11 -55oC ≤ TA ≤ +125oC - 16 MHz Clock Period tC 9, 10, 11 -55oC ≤ TA ≤ +125oC 1/fC - sec Bipolar Pulse Width t1 9, 10, 11 -55oC ≤ TA ≤ +125oC tC +10 - ns One-Zero Overlap t3 9, 10, 11 -55oC ≤ TA ≤ +125oC - tC - 10 ns Clock High Time tCH f =16.0MHz 9, 10, 11 -55oC ≤ TA ≤ +125oC 20 - ns Clock Low Time tCL f =16.0MHz 9, 10, 11 -55oC ≤ TA ≤ +125oC 20 - ns Serial Data Setup Time tCE1 9, 10, 11 -55oC ≤ TA ≤ +125oC 120 - ns Serial Data Hold Time tCE2 9, 10, 11 -55oC ≤ TA ≤ +125oC 0 - ns DCLK to SDO, NVM tCD2 9, 10, 11 -55oC ≤ TA ≤ +125oC - 40 ns tR2 9, 10, 11 -55oC ≤ TA ≤ +125oC - 40 ns ECLK to BZO NOTES: 1. AC Testing as follows: f = 4.0MHz, VIH = 70% VCC, VIL = 20% VCC, Speed Select = 16X; VOH ≥ VCC/2, VOL ≤ VCC/2; VCC = 4.5V and 5.5V; Input rise and fall times driven at 1 ns/V, Output load = 50pF. TABLE 3. HD-6409/883 ELECTRICAL PERFORMANCE SPECIFICATIONS LIMITS PARAMETER SYMBOL Input Capacitance CIN I/O Capacitance CI/O Output Rise Time (All except CO) tr CONDITIONS VCC = Open, f =1MHz All Measurements are referenced to device GND From 1.0 to 3.5V CL = 50pF 138 NOTES TEMPERATURE MIN MAX UNITS 1, 2 TA = +25oC - 10 pF 1, 2 TA = +25oC - 12 pF 1, 2 -55oC ≤ TA ≤ +125oC - 50 ns HD-6409/883 TABLE 3. HD-6409/883 ELECTRICAL PERFORMANCE SPECIFICATIONS (Continued) LIMITS PARAMETER SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Output Fall Time (All except CO) tf From 3.5 to 1.0V CL = 50pF 1, 2 -55oC ≤ TA ≤ +125oC - 50 ns CO Rise Time tr From 1.0 to 3.5V CL = 20pF 1, 2 -55oC ≤ TA ≤ +125oC - 11 ns CO Fall Time tf From 3.5 to 1.0V CL = 20pF 1, 2 -55oC ≤ TA ≤ +125oC - 11 ns ECLK to BZO, BOO tCE3 1, 3 -55oC ≤ TA ≤ +125oC 0.5 1.0 DBP CTS Low to BZO BOO Enabled tCE4 1, 3 -55oC ≤ TA ≤ +125oC 0.5 1.5 DBP CTS Low to ECLK Enabled tCE5 1, 3 -55oC ≤ TA ≤ +125oC 10.5 11.5 DBP CTS High to ECLK Disabled tCE6 1, 3 -55oC ≤ TA ≤ +125oC - 1.0 DBP CTS High to BZO BOO Disabled tCE7 1, 3 -55oC ≤ TA ≤ +125oC 1.5 2.5 DBP UDI to SDO, NVM tCD1 1, 3 -55oC ≤ TA ≤ +125oC 2.5 3.0 DBP RST Low to DCLK, SDO, NVM Low tCD3 1.3 -55oC ≤ TA ≤ +125oC 0.5 1.5 DBP RST High to DCLK, Enabled tCD4 1, 3 -55oC ≤ TA ≤ +125oC 0.5 1.5 DBP UDI to BZO, BOO tR1 1, 3 -55oC ≤ TA ≤ +125oC 0.5 1.0 DBP UDI to SDO, NVM tR3 1, 3 -55oC ≤ TA ≤ +125oC 2.5 3.0 DBP NOTES: 1. The parameters listed in Table 3 are controlled via design or process parameters and are not directly tested. 2. Guaranteed via characterization at initial device design and after major process and/or design changes. 3. DBP-Data Bit Period, Clock Rate = 16X, one DBP = 16 Clock Cycles; Clock Rate = 32X, one DBP = 32 Clock Cycles. TABLE 4. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD SUBGROUPS Initial Test 100%/5004 - Interim Test 100%/5004 1, 7, 9 PDA 100% 1 Final Test 100% 2, 3, 8A, 8B, 10, 11 - 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Samples/5005 1, 7, 9 Group A Groups C & D 139 HD-6409/883 Burn-In Circuits HD-6409/883 CERDIP VCC VCC A 1 20 19 R1 R1 R1 F4 GND HD-6409/883 CLCC R1 1 20 VCC 2 19 A 3 18 GND 4 17 GND A 5 16 A A 6 15 A 7 14 8 13 9 12 F0 10 11 A A R1 R1 R1 R1 R1 GND A 4 A 5 17 A 6 16 A A A 14 8 9 10 11 A VCC A R1 1. VCC = 5.5V ±0.5V 2. VIH = 4.5V ±10% = 100kHz ±10% 6. F4 = F0/16 13 R1 NOTES: = 47kΩ ±5% 12 VCC R1 5. F0 GND R1 A 4. R1 A 15 7 R1 = -0.2V to 0.4V GND R1 GND VCC 3. VIL A 18 R1 GND R1 2 R1 VCC 3 R1 A F4 R1 F0 GND R1 R1 VCC 140 GND HD-6409/883 Die Characteristics DIE DIMENSIONS: 88 x 78 x 19 ±1mils GLASSIVATION: Type: Si3N4 • SiOX Thickness: 10kÅ ±2kÅ METALLIZATION: Type: Silicon - Aluminum Thickness: Metal 1: 8kÅ ±1kÅ Metal 2: 16kÅ ±1kÅ WORST CASE CURRENT DENSITY: 0.8 x 105 A/cm2 Metallization Mask Layout HD-6409/883 UDI BOI BZI VCC BOO SD/CDS BZO SDO SS SRST ECLK NVM CTS DCLK MS RST GND CO 141 IX OX