UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1μA to 50mA. 2 1 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Ordering Number Note: Package MMBT5088G-AE3-R MMBT5089G-AE3-R Pin Assignment: E: Emitter B: Base SOT-23 SOT-23 C: Collector Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKING UTC MMBT5088 1QG UTC MMBT5089 1RG www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R206-033.C MMBT5088/MMBT5089 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 30 Collector-Emitter voltage VCEO V 25 35 Collector-Base voltage VCBO V 30 Emitter-base voltage VEBO 4.5 V Collector current-continuous IC 100 mA 350 mW Total Device Dissipation PD Linear Derating Factor above TA= 25°C 2.8 mW/°C Junction Temperature TJ 125 °C Operating Temperature TOPR -40 ~ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These ratings are based on a maximum junction temperature of 150 degrees C. 3. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. MMBT5088 MMBT5089 MMBT5088 MMBT5089 THERMAL DATA (TA=25°C, unless otherwise specified) PARAMETER Junction to Ambient UNISONIC TECHNOLOGIES CO., Ltd www.unisonic.com.tw SYMBOL JA RATINGS 357 UNIT °C/W 2 of 7 QW-R206-033.C MMBT5088/MMBT5089 NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS SYMBOL Collector-Emitter Breakdown Voltage MMBT5088 (Note) MMBT5089 MMBT5088 Collector-Base Breakdown Voltage MMBT5089 MMBT5088 Collector Cut-Off Current MMBT5089 Emitter Cutoff Current TEST CONDITIONS MIN TYP MAX UNIT BVCEO IC=1.0mA, IB=0 BVCBO IC=100A, IE=0 ICBO IEBO 30 25 35 30 VCB=20V, IE=0 VCB=15V, IE=0 VEB=3.0V, IC=0 VEB=4.5V, IC=0 50 50 50 100 V V V V nA nA nA nA ON CHARACTERISTICS DC Current Gain MMBT5088 MMBT5089 MMBT5088 MMBT5089 MMBT5088 MMBT5089 Collector-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product VCE=5.0V, IC=100A hFE VCE=5.0V, IC=1.0mA VCE(SAT) VBE(ON) VCE=5.0V, IC=10mA(Note) IC=10mA, IB=1.0mA IC=10mA, VCE=5.0V fT Collector-Base Capacitance CCB Emitter-Base Capacitance CEB Small-Signal Current Gain MMBT5088 MMBT5089 MMBT5088 Noise Figure MMBT5089 hFE NF VCE=5.0mA, IC=500A, f=20MHz VCB=5.0V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz VCE=5.0V, IC=1.0mA, f=1.0kHz VCE=5.0V, IC=100A, RS=10k, f=10kHz ~ 15.7kHz 300 400 350 450 300 400 900 1200 0.5 0.8 50 350 450 V V MHz 4 pF 10 pF 1400 1800 3.0 dB 2.0 dB Note: Pulse Test: Pulse Width300s, Duty Cycle2.0%. UNISONIC TECHNOLOGIES CO., Ltd www.unisonic.com.tw 3 of 7 QW-R206-033.C MMBT5088/MMBT5089 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Typical Pulsed Current Gain, hFE 1200 Typical Pulsed Current Gain vs Collector Current 125 C 1000 800 600 25 C 400 -40 C 200 0.25 β=10 0.2 0.15 125 C 25 C 0.1 0.05 -40 C 1 0.1 30 100 10 100 Collector Current, IC (mA) Base-Emitter ON Voltage, VBE(on) (V) Collector-Emitter Voltage, VBE(sat) (V) 0 0.01 0.03 0.1 0.3 1 3 10 Collector Current, IC (mA) Collector-Emitter Saturation Voltage vs. Collector Current 0.3 VCE=5.0V Collector-Emitter Voltage, VCE(sat) (V) 10 Collector-Cutoff Current vs Ambient Temperature Input and Output Capacitance vs Reverse Bias Voltage f=1.0MHz 5 VCB=45V 4 3 Cte 1 2 Cob 1 -0.1 25 0 50 75 100 125 150 Ambient Temperature, TA (℃) UNISONIC TECHNOLOGIES CO., Ltd www.unisonic.com.tw 0 4 8 12 16 20 Reverse Bias Voltage (V) 4 of 7 QW-R206-033.C Noise Figure, NF (dB) Noise Figure, NF (dB) Characteristics Relative To Value At TA=25 Collector Voltage, VCE (V) Source Resistance, RS (Ω) Power Dissipation, PD (mW) MMBT5088/MMBT5089 UNISONIC TECHNOLOGIES CO., Ltd www.unisonic.com.tw NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) QW-R206-033.C 5 of 7 MMBT5088/MMBT5089 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Source Resistance, RS (Ω) 10,000 Contours of Constant Narrow Band Noise Figure 5,000 2.0dB 2,000 3.0dB 1,000 4.0dB 500 6.0dB VCE=5.0V 200 f=1.0KHz Bandwidth=200Hz 100 1 10,000 Source Resistance, RS (Ω) 10 8.0dB 100 1,000 2.0dB 2,000 3.0dB 1,000 4.0dB 500 6.0dB VCE=5.0V 200 f=10KHz Bandwidth=2.0KHz 100 1 10 8.0dB 100 1,000 Collector Current, IC (µA) Characteristics Relative To Value (IC=1mA) Characteristics Relative To Value (VCE=5V) Source Resistance, RS (Ω) Characteristics Relative To Value (TA=25℃) 1.0dB 5,000 Collector Current, IC (µA) dB 5.0 B 6.0d Contours of Constant Narrow Band Noise Figure UNISONIC TECHNOLOGIES CO., Ltd www.unisonic.com.tw 6 of 7 QW-R206-033.C MMBT5088/MMBT5089 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., Ltd www.unisonic.com.tw 7 of 7 QW-R206-033.C