UNISONIC TECHNOLOGIES CO., LTD 2N4403 PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4403 is designed for use as a general purpose amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: 2N4403L ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2N4403-T92-B 2N4403L-T92-B 2N4403-T92-K 2N4403L-T92-K Package TO-92 TO-92 Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk 發 行 ＦＯＲ ＩＳＳＵＥ JUL 17.2007 文 件 管 理 中 心 UTC www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd Doc.Control Center 1 of 5 QW-R201-053.D 2N4403 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Total Device Dissipation Derate above 25℃ RATINGS UNIT -40 V -40 V -5 V -600 mA 625 mW PC 5.0 mW/℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. THERMAL DATA (Ta=25℃, unless otherwise specified) CHARACTERISTIC Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL VCBO VCEO VEBO IC SYMBOL θJA θJC RATINGS 200 83.3 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Emitter Breakdown BVCEO IC=-1mA, IB=0 Voltage (Note) Collector-Base Breakdown Voltage BVCBO Ic=-0.1mA, IE=0 Emitter-Base Breakdown Voltage BVEBO IE=-0.1mA, IC=0 Collector Cut-off Current ICEX VCE=-35V, VEB=-0.4V Base Cut-off Current IBEX VCE=-35V, VBE=-0.4V ON CHARACTERISTICS* hFE1 VCE=-1V,IC=-0.1mA hFE2 VCE=-1V,IC=-1mA DC Current Gain hFE3 VCE=-1V,IC=-10mA hFE4 VCE=-2V, IC=-150mA (Note) hFE5 VCE=-2V, IC=-500mA (Note) VCE(SAT1) IC=-150mA, IB=-15mA Collector-Emitter Saturation Voltage VCE(SAT2) IC=-500mA, IB=-50mA VBE(SAT1) IC=-150mA, IB=-15mA(Note) Base-Emitter Saturation Voltage VBE(SAT2) IC=-500mA, IB=-50mA MIN TYP MAX -40 V -40 -5 V V µA µA -0.1 -0.1 30 60 100 100 20 -0.75 300 -0.4 -0.75 -0.95 -1.3 SMALL SIGNAL CHARACTERISTICS Transition Frequency fT VCE=-10V, IC=-20mA, f=100MHz 200 Collector-Base Capacitance Ccb VCB=-10V, IE=0, f=140kHz 8.5 Emitter-Base Capacitance Ceb VBE=-0.5V, IC=0, f=140kHz 30 Input Impedance hIE VCE=-10V, IC=-1mA, f=1kHz 1.5 15 Voltage Feedback Ratio hRE VCE=-10V, IC=-1mA, f=1kHz 0.1 8 Small-Signal Current Gain hFE VCE=-10V, IC=-1mA, f=1kHz 60 500 ＦＯＲ ＩＳＳＵＥ Output Admittance hOE VCE=-10V, IC=-1mA, f=1kHz 1.0 100 JUL 17.2007 SWITCHING CHARACTERISTICS Delay Time tD 文 件 管 理 中 15心 VCC=-30V, IC=-150mA IB1=-15mA Rise Time tR 20 UTC Doc.Control Center VCC=-30V, IC=-150mA Storage Time tS 225 IB1= IB2=-15mA 30 Fall Time tF Note: Pulse test: Pulse Width≤300µs, Duty Cycle≤2% 發 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw UNIT 行 V V V V MHz pF pF kΩ ×10-4 µmbos ns ns ns ns 2 of 5 QW-R201-053.D 2N4403 PNP SILICON TRANSISTOR TEST CIRCUIT -30V 200 Ω 0 -16V ≤220ns 1KΩ 50Ω Figure 1. Saturated Turn-On Switching Timer 1.5V -6V Note: BVEBO=5V 0 -30V ≤220ns 1k 37Ω 1KΩ 50Ω Figure 2. Saturated Turn-Off Switching Timer 發 行 ＦＯＲ ＩＳＳＵＥ JUL 17.2007 文 件 管 理 中 心 UTC UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Doc.Control Center 3 of 5 QW-R201-053.D 2N4403 Base-Emitter Voltage, VBE(SAT) (V) Base-Emitter OnVoltage, VBE(ON )(V) DC Current Gain, hFE Collector-Emitter Voltage, VCE(SAT) (V) TYPICAL CHARACTERISTICS -100 Collector-Cutoff Current vs. Ambient Temperature 20 Input and Output Capacitance vs. Reverse Bias Voltage VCB=-35V 16 -10 Capacitance (pF) Collector Current,ICBO (nA) PNP SILICON TRANSISTOR -1 -0.1 -0.01 25 50 75 100 125 Ambient Temperature, TA (℃) Cib 12 8 4 0 -0.1 ＦＯＲ www.unisonic.com.tw 行 ＩＳＳＵＥ JUL 17.2007 -1 -10 -50 文 件 Bias 管 Voltage 理 中(V) 心 Reverse UTC UNISONIC TECHNOLOGIES CO., LTD Cob 發 Doc.Control Center 4 of 5 QW-R201-053.D 2N4403 PNP SILICON TRANSISTOR 發 行 UTC assumes no responsibility for equipment failures that result from using ＦＯ Ｒ products Ｉ Ｓ ＳatＵvalues Ｅ that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or JUL described 17.2007or contained other parameters) listed in products specifications of any and all UTC products herein. UTC products are not designed for use in life support appliances, or systems 文 件devices 管 理 中 心 where malfunction of these products can be reasonably expected to result inUTC personal injury. Reproduction in Doc.Control Center whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R201-053.D