UNISONIC TECHNOLOGIES CO., LTD MMBT2907A PNP SILICON TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER DESCRIPTION This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 600 mA. ORDERING INFORMATION Ordering Number Note: MMBT2907AG-AE3-R MMBT2907AG-AL3-R Pin assignment: E: Emitter B: Base Package SOT-23 SOT-323 C: Collector Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R220-001.H MMBT2907A PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°С unless otherwise specified) PARAMETER Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous RATINGS UNIT -60 V -60 V -5 V -600 mA SOT-23 350 mW Power Dissipation PD SOT-323 275 mW Junction Temperature TJ +150 °С Operating Temperature TOPR -40 ~ +150 C Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VCEO VCBO VEBO IC THERMAL DATA PARAMETER Junction to Case SYMBOL SOT-23 SOT-323 θJA RATINGS 357 455 UNIT C/W C/W ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note) BVCEO IC=-10mA, IB=0 Collector-Base Breakdown Voltage BVCBO IC=-10μA, IE=0 Emitter-Base Breakdown Voltage BVEBO IE=-10μA , IC=0 Base Cutoff Current IB VCB=-30V, VEB=-0.5V Collector Cutoff Current ICEX VCE=-30V, VBE=-0.5V VCB=-50V, IE=0 Collector Cutoff Current ICBO VCB=-50V, IE=0, TA=150°С ON CHARACTERISTICS IC=-0.1mA, VCE=-10V IC=-1.0 mA, VCE=-10V DC Current Gain hFE IC=-10 mA, VCE=-10V IC=-150 mA, VCE=-10V (Note) IC=-500 mA, VCE=-10V (Note) IC=-150 mA, IB=-15mA Collector-Emitter Saturation Voltage (Note) VCE(SAT) IC=-500 mA, IB=-50mA IC=-150 mA, IB=-15mA (Note) Base-Emitter Saturation Voltage VBE(SAT) IC=-500 mA, IB=-50mA SMALL SIGNAL CHARACTERISTICS Current Gain – Bandwidth Product fT IC=-50mA, VCE=-20V, f=100MHz Output Capacitance Cob VCB=-10V, IE=0, f=100kHz Input Capacitance Cib VEB=-2V, IC=0, f=100kHz SWITCHING CHARACTERISTICS Turn-on Time tON VCC=30V, IC=-150mA, Delay Time tDLY IB1=-15mA Rise Time tR Turn-off Time tOFF VCC=6V, IC=-150mA, Storage Time tS IB1= IB2=-15mA Fall Time tF Note: Pulse Test: Pulse Width 300ms, Duty Cycle2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT -60 -60 -5 -50 -50 -0.02 -20 75 100 100 100 50 V V V nA nA μA μA 300 -0.4 -1.6 -1.3 -2.6 V V V V 8 30 MHz pF pF 45 10 40 100 80 30 ns ns ns ns ns ns 200 2 of 6 QW-R220-001.H MMBT2907A PNP SILICON TRANSISTOR TEST CIRCUITS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R220-001.H MMBT2907A TYPICAL CHARACTERISTICS Typical Pulsed Current Gain vs Collector Current Collector Emitter Voltage, VCE(SAT) (V) 500 DC Current Gain, hFE VCE =-5V 400 125°С 300 200 100 25°С -40°С 0 -0.1 -0.3 -3 -10 -30 -100 -300 -1 Collector Current, IC (mA) -0.5 Collector Emitter Saturation Voltage vs Collector Current β=10 -0.4 -0.3 Base Emitter on Voltage, VBE(ON) (V) -0.8 25°С 125°С β=10 -0.2 0 -1 -100 -10 -100 Collector Current, IC (mA) -40°С 0 -1 -10 -100 -500 Collector Current, IC (mA) -500 -1 -0.8 -0.6 -0.4 -40°С 25°С 125°С VCE =-5V -0.2 0 -0.1 -1 -10 -25 Collector Current, IC (mA) Collector Cutoff Current vs Ambient Temperature 20 Input And Output Capacitance vs Reverse Bias Voltage VCB=-35V 16 -10 Capacitance (pF) Base Emitter Voltage, VBE(SAT) (V) -40°С -0.4 125°С -0.1 Base Emitter on Voltage vs Collector Current -1 -0.6 25°С -0.2 Base Emitter Saturation Voltage vs Collector Current Collector Current, ICBO (nA) PNP SILICON TRANSISTOR -1 -0.1 0.01 25 12 Cte 8 Cob 4 50 75 100 125 Ambient Temperature, Ta(°С) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 -0.1 -1 -10 -50 Reverse Bias Voltage (V) 4 of 6 QW-R220-001.H MMBT2907A Time (ns) Time (ns) TYPICAL CHARACTERISTICS(Cont.) Turn On Base Current, IB1 (mA) PNP SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R220-001.H MMBT2907A TYPICAL COMMON EMITTER CHARACTERISTICS (f=1kHz) 5 hoe 2 hre hFE 1 hie 0.5 VCE =-10V TA=25°С 0.2 0.1 -1 Common Emitter Characteristics -30 -20 -2 -5 Collector Current, IC (mA) -50 Relative To Values At VCE=10V, Char Relative to Values At IC=10mA, Char Common Emitter Characteristics 1.3 1.2 hre and hoe hre hie hfe hoe 1.1 1 hie 0.9 hFE 0.8 -4 IC=-10mA Ta=25°С -12 -16 -8 Collector Voltage, VCE (V) -20 Char.Relative To Voltage At Ta=25°С PNP SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R220-001.H