UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 1 TO-92 FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550 ORDERING INFORMATION Order Number Package Lead Free Plating Halogen Free S8050L-x-T92-B S8050G-x-T92-B TO-92 S8050L-x-T92-K S8050G-x-T92-K TO-92 Note: Pin Assignment: E: Emitter B: Base C: Collector Pin Assignment 1 2 3 E B C E B C Packing Tape Box Bulk MARKING INFORMATION PACKAGE MARKING TO-92 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-013.D S8050 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current IC 700 mA Collector Dissipation(TA=25°C) PC 1 W Junction Temperature TJ 150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=100A, IE=0 Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 Emitter-Base Breakdown Voltage BVEBO IE=100μA, Ic=0 Collector Cut-Off Current ICBO VCB=30V, IE=0 Emitter Cut-Off Current IEBO VEB=5V, IC=0 VCE=1V, IC=1mA hFE1 DC Current Gain hFE2 VCE=1V, IC=150 mA hFE3 VCE=1V, IC=500mA Collector-Emitter Saturation Voltage VCE(SAT) IC=500mA, IB=50mA Base-Emitter Saturation Voltage VBE(SAT) IC=500mA, IB=50mA Base-Emitter Saturation Voltage VBE VCE=1V, IC=10mA Current Gain Bandwidth Product fT VCE=10V, IC=50mA Output Capacitance Cob VCB=10V, IE=0, f=1MHz MIN 30 20 5 TYP MAX 1 100 100 120 40 UNIT V V V μA nA 400 0.5 1.2 1.0 100 9.0 V V V MHz pF CLASSIFICATION OF hFE2 RANK RANGE C 120-200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D 160-300 E 280-400 2 of 4 QW-R201-013.D S8050 TYPICAL CHARACTERISTICS Static Characteristics IB=3.0mA 103 VCE=1V IB=2.0mA 0.3 IB=1.5mA 0.2 IB=1.0mA IB=0.5mA 0.1 0 102 101 100 -1 10 0 0.4 0.8 1.2 1.6 2.0 Collector-Emitter Voltage, VCE ( V) 10 VCE=1V Saturation Voltage (mV) Collector Current, Ic (mA) 2 101 100 10-1 0 0.2 0.4 0.6 0.8 4 VBE(SAT) 102 VCE(SAT) 101 -1 10 1.0 Ic=10*IB 103 Base-Emitter Voltage, VBE (V) 100 101 102 103 Collector Current, Ic (mA) Current Gain-Bandwidth Product Collector Output Capacitance 103 102 101 101 102 103 Collector Current, Ic (mA) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Capacitance, Cob (pF) 103 VCE=10V 100 0 10 100 101 102 103 Collector Current, Ic (mA) Saturation Voltage Base-Emitter on Voltage 10 DC Current Gain IB=2.5mA 0.4 DC current Gain, hFE Collector Current, Ic (mA) 0.5 Current Gain-Bandwidth Product, fT (MHz) NPN SILICON TRANSISTOR 2 10 f=1MHz IE=0 101 100 0 10 101 102 103 Collector-Base Voltage (V) 3 of 4 QW-R201-013.D S8050 NPN SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R201-013.D