2639

NTE2639
Silicon NPN Transistor
CRT Horizontal Deflection, High Voltage,
High Speed Switch
Description:
The NTE2639 is a high voltage, high speed switching silicon NPN transistor in a plastic full−pack
envelope designed for use in horizontal deflection circuits of color TV receivers.
Absolute Maximum Ratings:
Collector−Emitter Voltage Peak Value (VBE = 0V), VCESM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Collector−Emitter Voltage (OpenBase), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825V
Collector Current, IC
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak Value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Base Current, IB
DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak Value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A
Reverse Base Current (Average over any 20ms period), −IB(AV) . . . . . . . . . . . . . . . . . . . . . . . 200mA
Reverse Base Current Peak Value (Note 1), −IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9A
Total Power Dissipation (THS ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45W
Electrostatic Discharge Capacitor Voltage (Human body model (250pF, 1.5kΩ), VC . . . . . . . . 10kV
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Maximum Thermal Resistance, Junction−to−Heatsink, RthJHS
Without Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.7K/W
With Heatsink Compound . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8K/W
Typical Thermal Resistance, Junction−to−Ambient (In Free Air), RthJA . . . . . . . . . . . . . . . . . . 35K/W
Note 1. Turn−off current.
Electrical Characteristics: (THS = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Isolation Limiting Value and Characteristic
Repetitive Peak Voltage from All Three
Terminals to External Heatsink
Visol
R.H. ≤ 65%; Clean and Dustfree
−
−
2500
V
Capacitance from T2 to External
Heatsink
Cisol
f = 1MHz
−
22
−
pF
ICES
VCE = 1700V, VBE = 0
−
−
1.0
mA
VCE = 1700V, VBE = 0, TJ = +125°C
−
−
2.0
mA
VEB = 7.5V, IC = 0A
−
−
1.0
mA
7.5
13.5
−
V
825
−
−
V
Static Characteristics
Collector Cutoff Current
Emitter Cutoff Current
IEBO
Emitter−Base Breakdown Voltage
V(BR)EBO
IB = 1mA
Collector−Emitter Sustaining Voltage
VCEO(sus) IB = 0A, IC = 100mA, L = 25mH
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 7A, IB = 1.75A
−
−
1.0
V
Base−Emitter Saturation Voltage
VBE(sat)
IC = 7A, IB = 1.75A
−
−
1.1
V
hFE
VCE = 5V, IC = 0.1A
−
22
−
4.0
6.0
6.5
−
5.8
6.5
μs
−
0.6
0.8
μs
DC Current Gain
VCE = 1V, IC = 7A
Dynamic Characteristics (Switching Times, 16kHz Line Deflection Circuit)
Turn−Off Storage Time
ts
Turn−Off Fall Time
tf
IC(sat) = 7A, LC = 650μH, Cfb = 18nF,
VCC = 162V, IB(end) = 1.5A,
LB = 2μH, −VBB = 4V
Note 2. Measured with half sine−wave voltage (curve tracer).
.228 (5.8) Max
.630 (16.0) Max
.177
(4.5)
.118 (3.0)
Isol
1.063
(27.0)
Max
.885
(22.5)
Max
B
C
E
.712
(18.1)
Min
.215 (5.45)
.215 (5.45)