isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4522AF DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 800V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers and PC monitors. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage ww w IC Collector Current- Continuous ICM Collector Current-Peak V 7.5 V 10 A 25 A IB Base Current- Continuous 6 A IBM Base Current-Peak 9 A PC Collector Power Dissipation @ TC=25℃ 45 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg n c . i m e s c s .i 800 Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU4522AF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0, L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 1.75A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7A; IB= 1.75A 1.03 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 7.5V; IC= 0 1.0 mA hFE-1 DC Current Gain hFE-2 DC Current Gain TYP. B B n c . i m e s c s i . w w w MIN IC= 1A; VCE= 5V IC= 7A; VCE= 5V 4.2 MAX UNIT 10 7.3 Switching times (16kHz line deflection circuit) tstg tf Storage Time Fall Time isc Website：www.iscsemi.cn 4.3 μs 0.4 μs IC= 7A, IB1= 1.4A; IB2= -3.5A; f= 16kHz 2