SANGDEST MICROELECTRONICS Technical Data Data Sheet N0181, Rev. - 95SQ015 Green Products 95SQ015 SCHOTTKY RECTIFIER Applications: z z z z Parallel switching power supply Converters Redundant power subsystems Reverse battery protection Features: z z z z z z z 125 °C TJ operation (VR<5V) High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Optimized for OR-ing applications Ultra low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability z This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request z z Mechanical Dimensions: In Inches / mm DO DO-201AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 95SQ015 Technical Data Data Sheet N0181, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL 95SQ015 SSG YY WW L = Part Name = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device 95SQ015 Package DO-201AD (Pb-Free) Shipping 1250pcs / tape For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS 95SQ015 Technical Data Data Sheet N0181, Rev. - Green Products Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 Condition @ 9 A, Pulse, TJ = 25 °C @ 18 A, Pulse, TJ = 25 °C @ 9 A, Pulse, TJ = 125 °C @ 18 A, Pulse, TJ = 125 °C @VR = rated VR ,TJ = 25 °C @VR = rated VR ,TJ = 100 °C Max. 0.34 0.37 0.25 0.31 7.0 348 Units V @VR = 12 V ,TJ = 100 °C @VR = 5 V ,TJ = 100 °C @VR = 5.0 V, Tc=25℃ fSIG = 1MHz Measured lead to lead 5 mm from package body - 310 190 1300 mA mA pF 8.0 nH 10,000 V/μs Symbol TJ Tstg Condition - Specification -55 to +125 -55 to +150 Units °C °C RθJA - 44 °C/W RθJL - 8 °C/W wt - 1.02 g VF2 Max. Reverse Current Typical Junction Capacitance Typical Series Inductance (per leg) Max. Voltage Rate of Change * IR1 IR2 IR3 IR4 CT LS dv/dt V mA mA Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Storage Temperature Range Maximum Thermal Resistance, Case to Heat Sink Maximum Thermal Resistance, Junction to lead Approximate Weight Case Style DO-201AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0181, Rev. - 95SQ015 Green Products • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0181, Rev. - 95SQ015 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •