SANGDEST MICROELECTRONICS SB3100 Green Products Technical Data Data Sheet N0089 Rev. - SB3100 SCHOTTKY RECTIFIER Applications: • • • • • • Disk Drives Switching power supply Converters Free-Wheeling diodes Reverse battery protection Battery Charging Features: • • • • • • • Small foot print, surface moutable Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request Mechanical Dimensions: In Inches / mm DO-201AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SB3100 Green Products Technical Data Data Sheet N0089 Rev. - Marking Diagram: S B 3100 SSG XXXXX Where XXXXX is YYWWL SB 3 100 SSG YY WW L = Device Type = Forward Current (3A) = Reverse Voltage (100V) = SSG = Year = Week = Lot Number Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package DO-201AD (Pb-Free) SB3100 Shipping 1250pcs / tape For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Symbol VRWM Max. Average Forward IF(AV) Max. Peak One Cycle Non-Repetitive Surge Current IFSM Condition 50% duty cycle @TC =105℃ rectangular wave form(L=0.375”) Max. 100 Units V 3.0 A 8.3 ms, half Sine pulse 110 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SB3100 Green Products Technical Data Data Sheet N0089 Rev. - Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 IR1 IR2 Typical Junction Capacitance * Cj Condition @ 3A, Pulse, TJ = 25℃ @VR = rated VR TJ = 25℃ @VR = rated VR TJ = 100℃ @VR = 5.0 V, Tc=25℃ fSIG = 1MHz Max. 0.79 1.0 Units V mA 10 mA 250 pF Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Junction Temperature Range Storage Temperature Range Maximum Thermal Resistance Junction to Case Approximate Weight Case Style Symbol Condition Specification Units TJ Tstg RθJC - -55 to +150 -55 to +150 8 ℃ ℃ ℃/W 1.02 g wt DC operation DO-201AD • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS SB3100 Green Products Technical Data Data Sheet N0089 Rev. - 1 100 Reverse Current-IR(MA) Junction Capacitance-CT(PF) 1000 TJ=25℃ 10 0.1 TJ=125℃ 0.01 TJ=25℃ 0.001 0.0001 0 5 10 15 20 25 30 35 40 10 20 30 Reverse Voltage-VR(V) 50 60 70 80 90 100 Reverse Voltage-VR(V) Fig.1-Typical Junction Capacitance Vs.Reverse Voltage Instantaneous Forward CurrentIF(A) 40 Fig.2-Typical Values Of Reverse Current Vs.Reverse Voltage 100 10 TJ=125℃ TJ=25℃ 1 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 Forward Voltage Drop-VF(V) Fig.3-Typical Forward Voltage Drop Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • SANGDEST MICROELECTRONICS Technical Data Data Sheet N0089 Rev. - SB3100 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •