TSAL4400 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 25° 94 8636 • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Package matches with detector TEFT4300 DESCRIPTION • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs, MQW technology with high radiant power molded in a blue-gray plastic package. APPLICATIONS • Infrared remote control units • Free air transmission systems • Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 36 ± 25 940 15 TSAL4400 Note • Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE TSAL4400 PACKAGING REMARKS PACKAGE FORM bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1.5 A Power dissipation PV 160 mW Junction temperature Tj 100 °C Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 300 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.8, 01-Aug-14 Document Number: 81006 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL4400 www.vishay.com Vishay Semiconductors 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 80 RthJA = 300 K/W 60 40 100 80 RthJA = 300 K/W 60 40 20 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 21317 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21318 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.35 1.6 V IF = 1 A, tp = 100 μs VF 2.6 3 V Temperature coefficient of VF IF = 1 mA TKVF -1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 16 36 135 290 Forward voltage Junction capacitance Radiant intensity Radiant power MIN. mV/K 10 μA 80 mW/sr 60 pF IF = 1 A, tp = 100 μs Ie IF = 100 mA, tp = 20 ms φe 40 mW IF = 20 mA TKφe -0.6 %/K ϕ ± 25 deg nm Temperature coefficient of φe Angle of half intensity mW/sr Peak wavelength IF = 100 mA λp 940 Spectral bandwidth IF = 100 mA Δλ 25 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 104 IF - Forward Current (mA) I F - Forward Current (A) 10 1 IFSM = 1 A (Single Pulse) t p/T = 0.01 0.05 10 0 0.1 0.5 1.0 10 -1 -2 10 96 11987 102 tP = 100 µs tP/T = 0.001 101 100 10 -1 10 0 10 1 t p - Pulse Duration (ms) 0 10 2 Fig. 3 - Pulse Forward Current vs. Pulse Duration Rev. 1.8, 01-Aug-14 103 13600 1 2 3 4 VF - Forward Voltage (V) Fig. 4 - Forward Current vs. Forward Voltage Document Number: 81006 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL4400 www.vishay.com Vishay Semiconductors 1000 Φe rel - Relative Radiant Power (%) 100 100 10 1 0.1 1 10 100 90 IF = 30 mA 80 70 60 50 40 30 20 10 0 840 1000 880 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current 920 960 1040 Fig. 8 - Relative Radiant Power vs. Wavelength 0° 1000 10° 20° 30° I e rel - Relative Radiant Intensity Φ e - Radiant Power (mW) 1000 λ - Wavelength (nm) 21445 100 10 1 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 13602 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 10 4 ϕ - Angular Displacement Ie - Radiant Intensity (mW/sr) tp = 100 μs 0.4 0.2 0 14328 Fig. 6 - Radiant Power vs. Forward Current Fig. 9 - Relative Radiant Intensity vs. Angular Displacement 1.6 Ie rel; Φe rel 1.2 IF = 20 mA 0.8 0.4 0 -10 0 10 94 7993 50 100 140 T amb - Ambient Temperature (°C) Fig. 7 - Rel. Radiant Intensity/Power vs. Ambient Temperature Rev. 1.8, 01-Aug-14 Document Number: 81006 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSAL4400 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C Ø 3.2 ± 0.15 A AREA NOT PLANE 5.8 ± 0.3 34.4 ± 0.5 < 0.6 (2.5) 3.4 ± 0.15 4.4 ± 0.3 R1.4 (sphere) Ø 2.9 ± 0.15 2.54 nom. 1.5 ± 0.5 + 0.15 + 0.2 0.5 - 0.1 0.4 - 0.05 technical drawings according to DIN specifications Drawing-No.: 6.544-5255.01-4 Issue: 9; 28.07.14 Rev. 1.8, 01-Aug-14 Document Number: 81006 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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