TSUS4300 Datasheet

TSUS4300
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 16°
• Low forward voltage
94 8636-1
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector TEFT4300
DESCRIPTION
TSUS4300 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue tinted plastic package.
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
PRODUCT SUMMARY
COMPONENT
TSUS4300
Ie (mW/sr)
ϕ (deg)
λp (nm)
tr (ns)
18
± 16
950
800
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
TSUS4300
TSUS4300-ASZ
PACKAGING
REMARKS
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk
PACKAGE FORM
T-1
Ammopack
MOQ: 10 000 pcs, 2000 pcs/box
T-1
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
TEST CONDITION
VR
5
UNIT
V
Forward current
IF
100
mA
200
mA
Peak forward current
tp/T = 0.5, tp = 100 μs
IFM
Surge forward current
tp = 100 μs
IFSM
2
A
PV
170
mW
°C
Power dissipation
Junction temperature
Tj
100
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
t ≤ 5 s, 2 mm from case
Tsd
260
°C
J-STD-051, leads 7 mm, soldered on PCB
RthJA
300
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.9, 20-Oct-15
Document Number: 81053
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS4300
www.vishay.com
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 300 K/W
80
60
40
100
80
RthJA = 300 K/W
60
40
20
20
0
0
0
10
21315
20 30
40
50
60
70 80
90
100
0
Tamb - Ambient Temperature (°C)
10
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
21316
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Breakdown voltage
Junction capacitance
Radiant intensity
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 100 mA, tp = 20 ms
VF
-
1.3
1.7
V
IF = 1.5 A, tp = 100 μs
VF
-
2.2
-
V
IF = 100 mA
TKVF
-
-1.3
-
mV/K
VR = 5 V
IR
-
-
100
μA
IR = 100 μA
V(BR)
5
40
-
VR = 0 V, f = 1 MHz, E = 0
Cj
-
30
-
pF
IF = 100 mA, tp = 20 ms
Ie
7
18
35
mW/sr
mW/sr
IF = 1.5 A, tp = 100 μs
Ie
-
160
-
IF = 100 mA, tp = 20 ms
φe
-
20
-
mW
IF = 20 mA
TKφe
-
-0.8
-
%/K
ϕ
-
± 16
-
deg
Peak wavelength
IF = 100 mA
λp
-
950
-
nm
Spectral bandwidth
IF = 100 mA
Δλ
-
50
-
nm
Temperature coefficient of λp
IF = 100 mA
TKλp
-
0.2
-
nm/K
IF = 100 mA
tr
-
800
-
ns
IF = 1.5 A
tr
-
400
-
ns
IF = 100 mA
tf
-
800
-
ns
IF = 1.5 A
tf
-
400
-
ns
d
-
2.1
-
mm
Radiant power
Temperature coefficient of φe
Angle of half intensity
Rise time
Fall time
Virtual source diameter
Rev. 1.9, 20-Oct-15
Document Number: 81053
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS4300
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
I e - Radiant Intensity (mW/sr)
IF - Forward Current (A)
10 1
t p /T = 0.01, I FM = 2 A
0.02
10 0
0.05
0.1
0.2
100
10
1
0.5
10 -1
10 -2
94 7947
0.1
10 -1
10 0
10 1
t p - Pulse Duration (ms)
10 2
10 0
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Φe - Radiant Power (mW)
I F - Forward Current (mA)
1000
10 3
10 2
10 1
10 0
100
10
1
0.1
0
1
2
3
4
V F - Forward Voltage (V)
94 7996
10 0
10 1
10 2
10 3
I F - Forward Current (mA)
94 7980
Fig. 4 - Forward Current vs. Forward Voltage
10 4
Fig. 7 - Radiant Power vs. Forward Current
1.2
1.6
1.1
1.2
IF = 10 mA
Ie rel; Φe rel
VF rel - Relative Forward Voltage (V)
10 4
Fig. 6 - Radiant Intensity vs. Forward Current
10 4
10 -1
10 1
10 2
10 3
I F - Forward Current (mA)
94 7979
1.0
0.9
IF = 20 mA
0.8
0.4
0.8
0.7
0
94 7990
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Rev. 1.9, 20-Oct-15
0
-10 0 10
94 7993
50
100
140
T amb - Ambient Temperature (°C)
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
Document Number: 81053
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TSUS4300
www.vishay.com
Vishay Semiconductors
0°
I e rel - Relative Radiant Intensity
Φe rel - Relative Radiant Power
1.25
1.0
0.75
0.5
0.25
IF = 100 mA
0
900
20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
1000
950
λ - Wavelength (nm)
94 7994
10°
0.6
0.4
0.2
0
0.2
0.4
0.6
94 7981
Fig. 9 - Relative Radiant Power vs. Wavelength
Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
3.2 ± 0.1
C
Ø 3 ± 0.1
< 0.6
(2.8)
3.5 ± 0.1
CHIP POSITION
AREA NOT PLANE
6.1 ± 0.3
34.7 ± 0.5
4.5 ± 0.3
3.9 ± 0.15
A
+ 0.15
0.4 - 0.05
+ 0.2
2.54 nom.
1.5 ± 0.5
0.5 - 0.1
technical drawings
according to DIN
specifications
Drawing-No.: 6.544-5269.02-4
Issue: 5; 28.07.14
Rev. 1.9, 20-Oct-15
Document Number: 81053
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000