235

NTE235
Silicon NPN Transistor
Final RF Power Output
Description:
The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output
amplifier stages such as citizen band communications equipment.
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Emitter Voltage (RBE = 150Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A
Collector Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
TC = +50°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TC =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IB = 0
80
–
–
V
Collector–Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150Ω
75
–
–
V
Emitter–Base Breakdown Voltage
5
–
–
V
V(BR)EBO IE = 100µA, IC = 0
Collector Cutoff Current
ICBO
VCB = 40V, IE = 0
–
–
10
µA
Emitter Cutoff Current
IEBO
VEB = 4V, IC = 0
–
–
10
µA
DC Current Gain
hFE
VCE = 5V, IC = 500mA
25
–
200
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 1A, IB = 100mA
–
0.15
0.6
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 1A, IB = 100mA
–
0.9
1.2
V
100
150
–
MHz
–
45
60
pF
4.0
–
–
W
60
–
–
%
Current Gain–Bandwidth Product
fT
VCE = 10V, IC = 100mA
Output Capacitance
Cob
VCB = 10V, f = 1MHz
Power Output
PO
VCC = 12V, Pin = 0.2W,
f = 27MHz
Collector Efficiency
η
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab