isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU103A DESCRIPTION ·Continuous Collector Current-IC= 1A ·Collector Power Dissipation: PC= 30W @TC= 25℃ APPLICATIONS ·Designed for TV vertical applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCER Collector-Emitter Voltage RBE= 220Ω 120 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 1 A PC Collector Power Dissipation@TC=25℃ 30 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 6.0 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU103A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CER VCE(sat)-1 Collector-Emitter Sustaining Voltage IC= 100mA; RBE= 220Ω 120 Collector-Emitter Saturation Voltage IC= 0.2A; IB= 20mA 1.0 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 mA hFE DC Current Gain IC= 0.2A; VCE= 10V COB Collector Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF Current Gain-Bandwidth Product IC= 0.1A; VCE= 10V 100 MHz fT isc Website：www.iscsemi.cn 2 TYP. MAX UNIT V 50 200