Product Specification 2SC2166 Silicon NPN Power Transistor DESCRIPTION ・High Power Gain: Gpe≥ 13.8dB @f= 27MHz, PO= 6W; VCC= 12V ・High Reliability APPLICATIONS ・Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCER Collector-Emitter Voltage RBE= 10Ω 45 V VEBO Emitter-Base Voltage 4 V Collector Current 4 A IC Collector Power Dissipation @TC=25℃ 12.5 PC Tj Tstg W Collector Power Dissipation @Ta=25℃ 1.5 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 83 ℃/W Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Website：www.jmnic.com Product Specification 2SC2166 Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 45 V V(BR)CER Collector-Emitter Breakdown Voltage IC= 10mA; RBE= 10Ω 45 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA, IC= 0 4 V ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 0.1A; VCE= 10V PO Output Power 35 180 6 7.5 W 55 60 % VCC= 12V; Pin= 0.25W; f= 27MHz ηC Collector Efficiency Website：www.jmnic.com