TSHG8400 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 830 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 22° • Low forward voltage 94 8389 • Suitable for high pulse current operation • High modulation bandwidth: fc = 18 MHz • Good spectral matching with CMOS cameras DESCRIPTION • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. APPLICATIONS • Infrared radiation source for operation with CMOS cameras (illumination) • High speed IR data transmission PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 70 ± 22 830 20 TSHG8400 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSHG8400 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) SYMBOL VALUE Reverse voltage PARAMETER TEST CONDITION VR 5 UNIT V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1 A Power dissipation PV 180 mW Junction temperature Tj 100 °C Tamb - 40 to + 85 °C Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.4, 03-Sep-13 Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W Document Number: 81297 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHG8400 www.vishay.com Vishay Semiconductors 120 200 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 90 100 0 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21143 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL TYP. MAX. IF = 100 mA, tp = 20 ms VF 1.5 1.8 IF = 1 A, tp = 100 μs VF 2.3 Temperature coefficient of VF IF = 1 mA TKVF - 1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. 70 V V mV/K 10 μA 135 mW/sr 125 45 UNIT pF IF = 1 A, tp = 100 μs Ie 700 IF = 100 mA, tp = 20 ms φe 50 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 22 deg nm Angle of half intensity mW/sr Peak wavelength IF = 100 mA λp 830 Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 20 ns Fall time IF = 100 mA tf 13 ns IDC = 70 mA, IAC = 30 mA pp fc 18 MHz d 3.7 mm Cut-off frequency Virtual source diameter Rev. 1.4, 03-Sep-13 Document Number: 81297 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHG8400 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Tamb < 50 °C tp/T = 0.01 1000 Radiant Power (mW) IF - Forward Current (mA) 0.02 0.05 0.1 10 0.5 100 0.01 0.1 0.1 1 10 100 tp - Pulse Duration (ms) 16031 1 10 100 IF - Forward Current (mA) 16971 Fig. 3 - Pulse Forward Current vs. Pulse Duration 1.25 Φe, rel - Relative Radiant Power 100 tp = 100 µs tp/T = 0.001 10 1.0 0.75 0.5 0.25 1 18873 1 3 2 VF - Forward Voltage (V) 0 740 4 λ- Wavelength (nm) 16972_1 Fig. 4 - Forward Current vs. Forward Voltage 900 800 Fig. 7 - Relative Radiant Power vs. Wavelength 0° Ie rel - Relative Radiant Intensity 100 10 1 0.1 18220 10 100 IF - Forward Current (mA) 1000 Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.4, 03-Sep-13 20° 30° 1000 1 10° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 94 8883 ϕ - Angular Displacement 0 Ie - Radiant Intensity (mW/sr) 1000 Fig. 6 - Radiant Power vs. Forward Current 1000 IF - Forward Current (mA) 1 e- 0.2 100 80° 0.6 0.4 0.2 0 Fig. 8 - Relative Radiant Intensity vs. Angular Displacement Document Number: 81297 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSHG8400 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Ø 5.8 ± 0.15 C R 2.49 (sphere) (3.5) 34.3 ± 0.55 < 0.7 8.7 ± 0.3 7.7 ± 0.15 A Area not plane + 0.2 0.6 - 0.1 1 min. Ø 5 ± 0.15 0.15 0.5 +- 0.05 0.15 0.5 +- 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.06-4 Issue: 6; 19.05.09 19257 Rev. 1.4, 03-Sep-13 Document Number: 81297 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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