VSMB1940X01 Datasheet

VSMB1940X01
www.vishay.com
Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm,
GaAlAs Double Hetero
FEATURES
21531
DESCRIPTION
VSMB1940X01 is an infrared, 940 nm emitting diode in
GaAlAs Double Hetero technology with high radiant power
and high speed, molded in clear, untinted 0805 plastic
package for surface mounting (SMD).
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Package type: surface mount
Package form: 0805
Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
AEC-Q101 qualified
Peak wavelength: p = 940 nm
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High reliability
High radiant power
High radiant intensity
High speed
Angle of half sensitivity:  = ± 60°
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•
•
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•
Low forward voltage
Suitable for high pulse current operation
0805 standard surface-mountable package
Floor life: 168 h, MSL 3, acc. J-STD-020
Lead (Pb)-free reflow soldering
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed IR data transmission
• High power emitter for low space applications
• High performance transmissive or reflective sensors
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
VSMB1940X01
6
Note
• Test conditions see table “Basic Characteristics“
 (deg)
p (nm)
tr (ns)
± 60
940
15
ORDERING INFORMATION
ORDERING CODE
VSMB1940X01
Note
• MOQ: minimum order quantity
PACKAGING
REMARKS
PACKAGE FORM
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
0805
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.4, 02-May-13
TEST CONDITION
tp/T = 0.1, tp = 100 μs
tp = 100 μs
t  5 s, 2 mm from case
J-STD-051, leads 7 mm, soldered on PCB
SYMBOL
VALUE
UNIT
VR
IF
IFM
IFSM
PV
Tj
Tamb
Tstg
Tsd
RthJA
5
100
200
1
160
100
- 40 to + 85
- 40 to + 100
260
270
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81933
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB1940X01
www.vishay.com
Vishay Semiconductors
120
160
IF - Forward Current (mA)
PV - Power Dissipation (mW)
180
140
120
100
RthJA = 270 K/W
80
60
40
100
20
0
0
10
21532
20
30
40
50
60
70
80
60
RthJA = 270 K/W
40
20
0
90 100
Tamb - Ambient Temperature (°C)
80
0
20
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
40
60
80
100
Tamb - Ambient Temperature (°C)
21533
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Temperature coefficient of VF
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of radiant
power
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
IF = 100 mA, tp = 20 ms
VF
1.15
1.35
1.6
IF = 1 A, tp = 100 μs
VF
2.2
V
mV/K
IF = 1 mA
TKVF
- 1.5
IF = 100 mA
TKVF
- 1.1
VR = 5 V
IR
VR = 0 V, f = 1 MHz,
E = 0 mW/cm2
CJ
UNIT
V
mV/K
10
70
μA
pF
IF = 100 mA, tp = 20 ms
Ie
IF = 1 A, tp = 100 μs
Ie
60
IF = 100 mA, tp = 20 ms
e
40
mW
IF = 1 mA
TKe
- 1.1
%/K
IF = 100 mA
TKe
- 0.51
%/K

± 60
deg
p
940
nm
Angle of half intensity
3
6
12
mW/sr
mW/sr
Peak wavelength
IF = 30 mA
Spectral bandwidth
IF = 30 mA

25
nm
Temperature coefficient of p
IF = 30 mA
TKp
0.25
nm
Rise time
IF = 100 mA, 20 % to 80 %
tr
15
ns
Fall time
IF = 100 mA, 20 % to 80 %
tf
15
ns
d
0.5
mm
Virtual source diameter
Rev. 1.4, 02-May-13
Document Number: 81933
2
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB1940X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
180
Ie rel - Relative Radiant Intensity (%)
100
10
tp = 100 µs
tp/T= 0.001
IF = 1 mA
160
140
120
IF = 100 mA
100
80
60
tp = 20 ms
1
40
0
1
2
3
VF - Forward Voltage (V)
21534
- 60 - 40 - 20
Fig. 3 - Forward Current vs. Forward Voltage
40
60
80
100
106
104
102
IF = 100 mA
100
IF = 10 mA
98
tp = 20 ms
96
94
IF = 1 mA
92
Φe rel - Relative Radiant Power (%)
100
108
90
- 40
- 20
0
20
40
60
80
90
IF = 30 mA
80
70
60
50
40
30
20
10
0
840
100
Tamb - Ambient Temperature (°C)
21443
880
920
960
1000
1040
λ - Wavelength (nm)
21445
Fig. 4 - Relative Forward Voltage vs. Ambient Temperature
Fig. 7 - Relative Radiant Power vs. Wavelength
0°
100
10°
20°
30°
Ie, rel - Relative Radiant Intensity
Ie - Radiant Intensity (mW/sr)
20
Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature
110
VF, rel - Relative Forward Voltage (%)
0
Tamb - Ambient Temperature (°C)
21444
10
tp = 1 µs
1
0.1
40°
1.0
0.9
50°
0.8
60°
0.01
1
20921
10
100
1000
IF - Forward Pulse Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
Rev. 1.4, 02-May-13
70°
0.7
ϕ - Angular Displacement
IF - Forward Current (mA)
1000
80°
0.6
0.4
0.2
0
948013-1
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81933
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB1940X01
www.vishay.com
Vishay Semiconductors
REFLOW SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
300
Temperature (°C)
max. 260 °C
245 °C
255 °C
240 °C
217 °C
250
max. 30 s
150
max. 100 s
max. 120 s
100
max. ramp up 3 °C/s max. ramp down 6 °C/s
50
0
0
50
100
19841
150
200
250
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 3
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
200
300
Time (s)
Fig. 9 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
PACKAGE DIMENSIONS in millimeters
20018
Rev. 1.4, 02-May-13
Document Number: 81933
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB1940X01
www.vishay.com
Vishay Semiconductors
BLISTER TAPE DIMENSIONS in millimeters
21501
Rev. 1.4, 02-May-13
Document Number: 81933
5
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMB1940X01
www.vishay.com
Vishay Semiconductors
REEL DIMENSIONS in millimeters
8.4 +2.5
Ø 177.8 max.
Ø 55 min.
8.4 +0.15
Z
Form of the leave open
of the wheel is supplier specific.
14.4 max.
Ø 20.2 min.
1.5 min.
Ø 13 - 0.2
+ 0.5
Z 2:1
Drawing-No.: 9.800-5096.01-4
Issue: 2; 26.04.10
20875
Rev. 1.4, 02-May-13
technical drawings
according to DIN
specifications
Document Number: 81933
6
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000