TSFF6410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λp = 870 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: ϕ = ± 22° • Low forward voltage 94 8389 • Suitable for high pulse current operation • High modulation bandwidth: fc = 24 MHz • Good spectral matching to Si photodetectors • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. APPLICATIONS • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high modulation frequencies or high data transmission rate requirements PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λp (nm) tr (ns) 70 ± 22 870 15 TSFF6410 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TSFF6410 TSFF6410-ASZ PACKAGING REMARKS Bulk MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ Ammopack MOQ: 5000 pcs, 1000 pcs/box T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 Surge forward current tp = 100 μs IFSM 1 A PV 180 mW Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction / ambient Rev. 1.3, 15-Apr-15 Tj 100 °C Tamb -40 to +85 °C °C Tstg -40 to +100 t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Document Number: 81126 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF6410 www.vishay.com Vishay Semiconductors 120 200 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 160 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 0 90 100 Tamb - Ambient Temperature (°C) 10 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 21143 Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL TYP. MAX. UNIT IF = 100 mA, tp = 20 ms VF 1.5 1.8 V IF = 1 A, tp = 100 μs VF 2.3 3.0 V Temperature coefficient of VF IF = 1 mA TKVF -1.8 Reverse current VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. mV/K 10 μA 135 mW/sr 125 45 70 pF IF = 1 A, tp = 100 μs Ie 700 IF = 100 mA, tp = 20 ms φe 50 mW IF = 100 mA TKφe -0.35 %/K ϕ ± 22 deg nm Angle of half intensity mW/sr Peak wavelength IF = 100 mA λp 870 Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 24 MHz d 2.1 mm Cut-off frequency Virtual source diameter Rev. 1.3, 15-Apr-15 Document Number: 81126 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF6410 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1.25 Φe rel - Relative Radiant Power Tamb < 50 °C tp/T = 0.01 1000 IF - Forward Current (mA) 0.02 0.05 0.1 0.2 0.5 100 0.01 0.1 1 10 0.75 0.5 0.25 0 780 100 tp - Pulse Duration (ms) 16031 1.0 Fig. 3 - Pulse Forward Current vs. Pulse Duration 980 880 λ - Wavelength (nm) 95 9886 Fig. 6 - Relative Radiant Power vs. Wavelength 0° 10° 20° 100 tp = 100 µs tp/T = 0.001 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 Fig. 4 - Forward Current vs. Forward Voltage 0.6 94 8883 0.4 0.2 0 Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 1 1000 0 Φe, Ie - Attenuation (dB) Ie - Radiant Intensity (mW/sr) ϕ - Angular Displacement 30° Ie rel - Relative Radiant Intensity IF - Forward Current (mA) 1000 100 10 1 -1 -2 -3 IFDC = 70 mA IFAC = 30 mA pp -4 -5 0.1 1 18220 10 100 IF - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Rev. 1.3, 15-Apr-15 101 1000 14256 102 103 104 105 f - Frequency (kHz) Fig. 8 - Attenuation vs. Frequency Document Number: 81126 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TSFF6410 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Ø 5.8 ± 0.15 C R 2.49 (sphere) (3.5) 34.3 ± 0.55 < 0.7 8.7 ± 0.3 7.7 ± 0.15 A Area not plane + 0.2 0.6 - 0.1 1 min. Ø 5 ± 0.15 0.15 0.5 +- 0.05 0.15 0.5 +- 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.06-4 Issue: 6; 19.05.09 19257 Rev. 1.3, 15-Apr-15 Document Number: 81126 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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