SEMiX452GB176HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1700 V Tc = 25 °C 437 A Tc = 80 °C 310 A 300 A ICnom ICRM SEMiX® 2s Trench IGBT Modules SEMiX452GB176HDs VGES tpsc Tj ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V 600 A -20 ... 20 V 10 µs -55 ... 150 °C Tc = 25 °C 389 A Tc = 80 °C 262 A 300 A Tj = 125 °C Inverse diode IF Tj = 150 °C IFnom Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders IFRM IFRM = 2xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2000 A -40 ... 150 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 rCE Conditions IC = 300 A VGE = 15 V chiplevel VGE = 15 V min. typ. max. Unit Tj = 25 °C 2 2.45 V Tj = 125 °C 2.5 2.9 V Tj = 25 °C 1 1.2 V Tj = 125 °C 0.9 1.1 V Tj = 25 °C 3.3 4.2 m 5.2 6.0 m 5.8 6.4 V 3 mA Tj = 125 °C VGE(th) VGE=VCE, IC = 12 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 1200 V IC = 300 A VGE = ±15 V RG on = 4 RG off = 4 td(on) tr Eon td(off) tf Eoff Rth(j-c) 5.2 Tj = 25 °C Tj = 125 °C mA f = 1 MHz 26.4 nF f = 1 MHz 1.10 nF f = 1 MHz Tj = 125 °C 0.88 nF 2800 nC 2.50 340 ns Tj = 125 °C 75 ns Tj = 125 °C 180 mJ Tj = 125 °C 900 ns Tj = 125 °C 105 ns Tj = 125 °C 110 mJ per IGBT 0.073 K/W GB © by SEMIKRON Rev. 3 – 13.01.2012 1 SEMiX452GB176HDs Characteristics Symbol Conditions Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 rF SEMiX® 2s Trench IGBT Modules SEMiX452GB176HDs IRRM Qrr Err Rth(j-c) • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders Tj = 25 °C Tj = 125 °C typ. max. Unit 1.7 1.90 V 1.7 1.9 V Tj = 25 °C 0.9 1.1 1.3 V Tj = 125 °C 0.7 0.9 1.1 V Tj = 25 °C 2.0 2.0 2.0 m 2.7 2.7 m Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 4500 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 1200 V per diode 2.7 360 A 85 µC 46 mJ 0.15 K/W Module LCE RCC'+EE' Features min. res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 18 nH TC = 25 °C 0.7 m TC = 125 °C 1 m 0.045 to terminals (M6) Mt K/W 3 5 2.5 5 Nm Nm Nm w 250 g Temperatur Sensor R100 Tc=100°C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% 3550 ±2% K GB 2 Rev. 3 – 13.01.2012 © by SEMIKRON SEMiX452GB176HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 3 – 13.01.2012 3 SEMiX452GB176HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 3 – 13.01.2012 © by SEMIKRON SEMiX452GB176HDs SEMiX 2s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 3 – 13.01.2012 5