SEMiX151GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 231 A Tc = 80 °C 176 A 150 A ICnom ICRM SEMiX® 1s VGES tpsc Tj ICRM = 3xICnom VCC = 720 V VGE ≤ 15 V VCES ≤ 1200 V 450 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A Tj = 125 °C Inverse diode SEMiX151GB12Vs IF Tj = 175 °C IFnom Features • Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Visol AC sinus 50Hz, t = 1 min • AC inverter drives • UPS • Electronic Welding Characteristics Remarks IGBT • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C Symbol VCE(sat) VCE0 Conditions IC = 150 A VGE = 15 V chiplevel chiplevel rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 6 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 600 V IC = 150 A VGE = ±15 V RG on = 1 RG off = 1 di/dton = 4600 A/µs di/dtoff = 1700 A/µs du/dtoff = 6700 V/ µs per IGBT td(on) tr Eon td(off) tf Eoff Rth(j-c) min. 600 A -40 ... 125 °C 4000 V typ. max. Unit Tj = 25 °C 1.75 2.20 V Tj = 150 °C 2.20 2.50 V Tj = 25 °C 0.94 1.04 V Tj = 150 °C 0.88 0.98 V Tj = 25 °C 5.4 7.7 m 8.8 10.1 m 6 6.5 V 0.1 0.3 mA Tj = 150 °C 5.5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 9.0 nF f = 1 MHz 0.89 nF f = 1 MHz Tj = 150 °C 0.88 nF 1650 nC 5.00 319 ns Tj = 150 °C 46 ns Tj = 150 °C 19.4 mJ Tj = 150 °C 482 ns Tj = 150 °C 68 ns Tj = 150 °C 17.1 mJ 0.19 K/W GB © by SEMIKRON Rev. 4 – 13.12.2012 1 SEMiX151GB12Vs Characteristics Symbol Conditions Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 chiplevel rF SEMiX® 1s IRRM Qrr Err Rth(j-c) SEMiX151GB12Vs • Homogeneous Si • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic Welding Tj = 25 °C Tj = 150 °C typ. max. Unit 2.14 2.46 V 2.07 2.38 V Tj = 25 °C 1.1 1.3 1.5 V Tj = 150 °C 0.7 0.9 1.1 V Tj = 25 °C 4.3 5.6 6.4 m 7.8 8.5 m Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 4400 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per diode 7.0 175 A 27.5 µC 11.5 mJ 0.31 K/W Module LCE RCC'+EE' Features chiplevel min. res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 16 nH TC = 25 °C 0.7 m TC = 125 °C 1 m 0.075 to terminals (M6) Mt K/W 3 5 2.5 5 Nm Nm Nm w 145 g 493 ± 5% 3550 ±2% K Temperatur Sensor R100 Tc=100°C (R25=5 k) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; Remarks • Case temperature limited to TC=125°C max. • Product reliability results are valid for Tj=150°C GB 2 Rev. 4 – 13.12.2012 © by SEMIKRON SEMiX151GB12Vs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 4 – 13.12.2012 3 SEMiX151GB12Vs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 4 – 13.12.2012 © by SEMIKRON SEMiX151GB12Vs SEMiX 1s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 4 – 13.12.2012 5