Reliability Report

AOS Semiconductor
Product Reliability Report
AOT416/AOT416L,
rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
495 Mercury Drive
Sunnyvale, CA 94085
U.S.
Tel: (408) 830-9742
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AOT416. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOT416 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
The AOT416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with
low gate charge. The result is outstanding efficiency with controlled switching behavior. This
universal technology is well suited for PWM, load switching and general purpose applications.
-RoHS Compliant
-AOT416L is Halogen Free
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II. Die / Package Information:
Process
Package Type
Lead Frame
Die Attach
Bond wire
Flammability Rating
Backside Metallization
Moisture Level
AOT416
AOT416L (Green Compound)
Standard sub-micron
Standard sub-micron
Low voltage N channel process Low voltage N channel process
3 leads TO220
3 leads TO220
Bare Cu
Bare Cu
Soft solder
Soft solder
Al 5&12mils
Al 5&12mils
UL-94 V-0
UL-94 V-0
Ti / Ni / Ag
Ti / Ni / Ag
Up to Level 1 *
Up to Level 1*
Note * based on info provided by assembler and mold compound supplier
III. Result of Reliability Stress for AOT416 (Standard) & AOT416L (Green)
Test Item
Test Condition
Time
Point
Lot Attribution
Total
Sample
size
Solder
Reflow
Precondition
Standard: 1hr PCT+3
cycle reflow@260°c
Green: 168hr 85°c
/85%RH +3 cycle
reflow@260°c
Temp = 150°c ,
Vgs=100% of Vgsmax
-
Standard: 24 lots
Green: 8 lots
4345pcs
0
77pcs
0
HTGB
168hrs
500 hrs
1000 hrs
1 lot
(Note A*)
HTRB
Temp = 150°c ,
Vds=80% of Vdsmax
168hrs
500 hrs
1000 hrs
1 lot
(Note A*)
HAST
130°c , 85%RH,
33.3 psi, Vgs = 80% of
Vgs max
100 hrs
Pressure Pot
121°c , 29.7psi,
RH=100%
96 hrs
Temperature
Cycle
-65°c to 150°c ,
air to air
250 / 500
cycles
Number
of
Failures
77 pcs / lot
77pcs
0
77 pcs / lot
Standard : 21 lots
Green: 5 lots
1430pcs
0
(Note B**)
Standard : 24 lots
Green: 5 lots
55 pcs / lot
1595pcs
0
(Note B**)
Standard : 16 lots
Green: 8 lots
55 pcs / lot
1320pcs
0
(Note B**)
55 pcs / lot
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III. Result of Reliability Stress for AOT416 (Standard) & AOT416L (Green)
Continues
DPA
Internal Vision
Cross-section
X-ray
CSAM
NA
5
5
5
5
5
5
0
NA
5
5
0
Bond Integrity
Room Temp
150°c bake
150°c bake
0hr
250hr
500hr
40
40
40
40 wires
40 wires
40 wires
0
Solderability
245°c
5 sec
15
15 leads
0
Note A: The HTGB and HTRB reliability data presents total of available AOT416 and AOT416L
burn-in data up to the published date.
Note B: The pressure pot, temperature cycle and HAST reliability data for AOT416 and AOT416L
comes from the AOS generic package qualification data.
IV. Reliability Evaluation
FIT rate (per billion): 137
MTTF = 833 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size of the selected product (AOT416). Failure Rate Determination is based on JEDEC
Standard JESD 85. FIT means one failure per billion hours.
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9
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Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10
9
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MTTF = 10 / FIT = 7.30 x 10 hrs = 833 years
/ [2x2x77x168x258] = 137
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
Af
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
258
87
32
13
5.64
2.59
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Tjs = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tju =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV/K
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