High-reliability discrete products and engineering services since 1977 MR2000 SERIES MEDIUM CURRENT SILICON RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Symbol MR 2000 MR 2001 MR 2002 MR 2004 MR 2006 MR 2008 MR 2010 Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR 50 100 200 400 600 800 1000 Volts Non-repetitive peak reverse voltage (half-wave, single phase, 60Hz peak) VRSM 60 120 240 480 720 960 1200 Volts RMS forward current I(RMS) 40 Amps IO 20 Amps IFSM 400(1 cycle) Amps TJ, Tstg -65 to +175 °C RӨJC 1.3 °C/W Ratings Average rectified forward current (single phase, resistive load, 60Hz, TC = 150°C) Non-repetitive peak surge current (surge applied @ rated load conditions, half wave, single phase, 60Hz) Operating and storage temperature range Maximum thermal resistance, junction to case ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Maximum Unit Maximum instantaneous forward voltage (IF = 63A, TC = 25°C) Characteristic VF 1.1 Volts Maximum reverse current (rated dc voltage) TC = 25°C TC = 100°C IR 100 500 µA Rev. 20150317 MR2000 SERIES MEDIUM CURRENT SILICON RECTIFIERS High-reliability discrete products and engineering services since 1977 MECHANICAL CHARACTERISTICS Case DO-4(R) Marking Alpha-numeric Normal polarity Cathode is stud Reverse polarity Anode is stud (add “R” suffix) DO-4(R) A B C D E F G H Inches Min Max 0.078 0.422 0.453 0.405 0.800 0.420 0.440 0.250 0.424 0.066 - Millimeters Min Max 1.981 10.719 11.506 10.287 20.320 10.668 11.176 6.350 10.770 1.676 - Rev. 20150317 High-reliability discrete products and engineering services since 1977 MR2000 SERIES MEDIUM CURRENT SILICON RECTIFIERS Rev. 20150317 High-reliability discrete products and engineering services since 1977 MR2000 SERIES MEDIUM CURRENT SILICON RECTIFIERS Duty cycle = D = tp/t1 Peak power = Ppk is peak of an equivalent square power pulse To determine maximum junction temperature of the diode in a given situation the following procedure is recommended: The temperature of the case should be measured using a thermocouple placed on the case at the temperature reference point. The thermal mass connected to the case is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady state conditions are achieved. Using the measured value of TC the junction temperature may be determined by: TJ = TC + ΔTJC, where ΔTJC is the increase in junction temperature above the case temperature. It may be determined by ΔTJC = Ppk ● RØJC [D + (1-D) ● r(tr +tp) –r(t1)] where r(t) = normalized value of transient thermal resistance at time t from figure 6, and r(t1+tp) = normalized value of transient thermal resistance at time t 1 +tp. Rev. 20150317 High-reliability discrete products and engineering services since 1977 MR2000 SERIES MEDIUM CURRENT SILICON RECTIFIERS Rev. 20150317 High-reliability discrete products and engineering services since 1977 MR2000 SERIES MEDIUM CURRENT SILICON RECTIFIERS As the frequency of the input signal is increased, the reverse recovery time of the diode (figure 9) becomes significant, resulting in an increasing ac voltage component across RL which is opposite in polarity to the forward current, thereby reducing the value of the efficiency factor, σ, as shown in figure 10. It should be emphasized that figure 10 shows waveform efficiency only; it does not provide a measure of diode losses. Data was obtained by measuring the ac component of V O with a true rms ac voltmeter and the dc component with a dc voltmeter. The data was used in Equation 1 to obtain points for figure 10. Rev. 20150317