SKiiP 10NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP® 1 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Remarks IC A Ts = 70 °C 6 A Ts = 25 °C 6 A Ts = 70 °C ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 6 A 4 A 12 A -20 ... 20 V 10 µs -40 ... 175 °C 1200 V Ts = 25 °C 6 A Ts = 70 °C 6 A Ts = 25 °C 6 A Ts = 70 °C 6 A Tj = 150 °C Tj = 25 °C Tj = 150 °C Tj = 175 °C ICnom ICRM VGES tpsc • VCEsat , VF= chip level value • Case temp. limited to TC= 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj≤150 (recomm. Top = -40 ... +150°C) Tj = 175 °C V 6 Chopper - IGBT VCES Features Tj = 150 °C 1200 Ts = 25 °C ICnom tpsc SKiiP 10NAB12T4V1 Tj = 25 °C Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C 4 A 12 A -20 ... 20 V 10 µs -40 ... 175 °C Inverse - Diode VRRM IF IF Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 7.5 A Ts = 70 °C 7.5 A Ts = 25 °C 7.5 A Ts = 70 °C 7.5 A 4 A IFnom IFRM IFRM = 3 x IFnom 12 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C 36 A -40 ... 175 °C Tj Freewheeling - Diode VRRM IF IF Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 7.5 A Ts = 70 °C 7.5 A Ts = 25 °C 7.5 A Ts = 70 °C 7.5 A 4 A 12 A IFnom IFRM IFRM = 3 x IFnom IFSM tp = 10 ms, sin 180°, Tj = 150 °C Tj 36 A -40 ... 175 °C NAB © by SEMIKRON Rev. 3 – 02.12.2011 1 SKiiP 10NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Rectifier - Diode VRRM Tj = 25 °C IF Ts = 25 °C, Tj = 150 °C MiniSKiiP® 1 I2t V 39 A 8 A 10 ms sin 180° Tj = 25 °C 220 A Tj = 150 °C 200 A 10 ms sin 180° Tj = 25 °C 242 A2s Tj = 150 °C 200 A2s -40 ... 150 °C IFnom IFSM 1600 Tj Module It(RMS) Tterminal = 80 °C, 20A per spring Tstg SKiiP 10NAB12T4V1 Visol AC sinus 50Hz, 1 min 20 A -40 ... 125 °C 2500 V Characteristics Features • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Symbol rCE Remarks • VCEsat , VF= chip level value • Case temp. limited to TC= 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj≤150 (recomm. Top = -40 ... +150°C) Conditions Inverter - IGBT IC = 4 A VCE(sat) VGE = 15 V chiplevel VCE0 VGE = 15 V min. typ. max. Unit Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V V Tj = 25 °C 0.8 0.9 Tj = 150 °C 0.7 0.8 V Tj = 25 °C 263 300 m Tj = 150 °C 388 413 m VGE(th) VGE = VCE V, IC = 1 mA ICES VGE = 0 V VCE = VCES V Cies Coes Cres VCE = 25 V VGE = 0 V QG - 8 V...+ 15 V RGint Tj = 25 °C td(on) VCC = 600 V IC = 4 A RG on = 150 RG off = 150 tr Eon td(off) tf Eoff VGE = +15/-15 V Rth(j-s) per IGBT Chopper - IGBT IC = 4 A VCE(sat) VGE = 15 V chiplevel VCE0 rCE VGE = 15 V 5.8 6.5 V Tj = 25 °C 0.1 0.3 mA f = 1 MHz 0.25 nF f = 1 MHz 0.03 nF f = 1 MHz 0.01 nF 23 nC 0.00 Tj = 150 °C 65 ns Tj = 150 °C 45 ns Tj = 150 °C 0.66 mJ Tj = 150 °C 300 ns mA Tj = 150 °C 110 ns Tj = 150 °C 0.37 mJ 2.49 K/W Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V V Tj = 25 °C 0.8 0.9 Tj = 150 °C 0.7 0.8 V Tj = 25 °C 263 300 m 388 413 m 5.8 6.5 V 0.1 0.3 mA Tj = 150 °C VGE(th) VGE = VCE V, IC = 1 mA ICES VGE = 0 V VCE = 1200 V QG - 8 V...+ 15 V RGint Tj = 25 °C 5 Tj = 25 °C 5 Tj = 150 °C mA 23 nC 0.00 NAB 2 Rev. 3 – 02.12.2011 © by SEMIKRON SKiiP 10NAB12T4V1 Characteristics Symbol Conditions min. typ. max. Unit Chopper - IGBT td(on) tr Eon td(off) tf MiniSKiiP® 1 SKiiP 10NAB12T4V1 VCC = 600 V IC = 4 A RG on = 150 RG off = 150 Eoff VGE = +15/-15 V Rth(j-s) per IGBT Inverse - Diode VF = VEC IF = 4 A VGE = 0 V chiplevel VF0 rF Features • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Remarks • VCEsat , VF= chip level value • Case temp. limited to TC= 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj≤150 (recomm. Top = -40 ... +150°C) IRRM Qrr Err Rth(j-s) IF = 4 A di/dtoff = 110 A/µs VGE = -15 V VCC = 600 V per Diode Freewheeling - Diode VF = VEC IF = 4 A VGE = 0 V chiplevel VF0 rF IRRM Qrr Err Rth(j-s) IF = 4 A di/dtoff = 110 A/µs VGE = -15 V VCC = 600 V per Diode Rectifier - Diode VF = VEC IF = 8 A VGE = 0 V chiplevel VF0 Tj = 150 °C 65 Tj = 150 °C 45 ns Tj = 150 °C 0.66 mJ Tj = 150 °C 300 ns Tj = 150 °C 110 ns Tj = 150 °C 0.37 mJ 2.49 K/W Tj = 25 °C 1.8 2.1 V Tj = 150 °C 1.6 1.9 V V Tj = 25 °C 1.3 1.5 Tj = 150 °C 0.9 1.1 V Tj = 25 °C 129 144 m 198 m Tj = 150 °C 181 Tj = 150 °C 3.4 A Tj = 150 °C 0.95 µC Tj = 150 °C 0.34 mJ 2.53 K/W Tj = 25 °C 1.8 2.1 V Tj = 150 °C 1.6 1.9 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 129 144 m Tj = 150 °C 181 198 m Tj = 150 °C 3.4 A Tj = 150 °C 0.95 µC Tj = 150 °C 0.34 mJ 2.53 K/W Tj = 25 °C 1 1.21 V Tj = 125 °C 1.1 V Tj = 25 °C 1.0 V Tj = 125 °C Tj = 25 °C rF 15 Tj = 125 °C Rth(j-s) ns 0.8 V 29 m 34 per Diode 1.5 m K/W Module Ms to heat sink 2 w 2.5 Nm 35 g 1670 ± 3% Temperatur Sensor R100 Tr = 100 °C, tolerance = 3 % 2 R(T) R(T)=1000[1+A(T-25°C)+B(T-25°C) ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 NAB © by SEMIKRON Rev. 3 – 02.12.2011 3 SKiiP 10NAB12T4V1 Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature IC = f(TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic 4 Rev. 3 – 02.12.2011 © by SEMIKRON SKiiP 10NAB12T4V1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic © by SEMIKRON Rev. 3 – 02.12.2011 5 SKiiP 10NAB12T4V1 pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 6 Rev. 3 – 02.12.2011 © by SEMIKRON