SKiiP 23NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP® 2 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Typical Applications* • Inverter up to 14 kVA • Typical motor power 7,5 kW Tj = 175 °C V 33 A Ts = 70 °C 26 A Ts = 25 °C 37 A Ts = 70 °C ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 30 A 25 A 75 A -20 ... 20 V 10 µs -40 ... 175 °C 1200 V Ts = 25 °C 33 A Ts = 70 °C 26 A Ts = 25 °C 37 A Ts = 70 °C 30 A 25 A 75 A -20 ... 20 V 10 µs -40 ... 175 °C Tj = 150 °C Chopper - IGBT VCES Features Tj = 150 °C 1200 Ts = 25 °C ICnom tpsc SKiiP 23NAB12T4V1 Tj = 25 °C IC Tj = 25 °C Tj = 150 °C Tj = 175 °C ICnom ICRM VGES tpsc Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Inverse - Diode Remarks • VCEsat , VF= chip level value • Case temp. limited to TC= 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj≤150 (recomm. Top = -40 ... +150°C) VRRM IF IF Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 29 A Ts = 70 °C 22 A Ts = 25 °C 32 A Ts = 70 °C 26 A 25 A IFnom IFRM IFRM = 3xIFnom 75 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C 100 A -40 ... 175 °C Tj Freewheeling - Diode VRRM IF IF Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 29 A Ts = 70 °C 22 A Ts = 25 °C 32 A Ts = 70 °C 26 A 25 A 75 A IFnom IFRM IFRM = 3xIFnom IFSM tp = 10 ms, sin 180°, Tj = 150 °C Tj 100 A -40 ... 175 °C NAB © by SEMIKRON Rev. 3 – 02.12.2011 1 SKiiP 23NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Rectifier - Diode VRRM Tj = 25 °C IF Ts = 25 °C, Tj = 150 °C MiniSKiiP® 2 I2t V 52 A 13 A 10 ms sin 180° Tj = 25 °C 370 A Tj = 150 °C 270 A 10 ms sin 180° Tj = 25 °C 685 A2s Tj = 150 °C 365 A2s -40 ... 150 °C IFnom IFSM 1600 Tj Module It(RMS) Tterminal = 80 °C, 20A per spring Tstg SKiiP 23NAB12T4V1 Visol AC sinus 50Hz, 1 min 40 A -40 ... 125 °C 2500 V Characteristics Features Symbol Conditions • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Inverter - IGBT IC = 25 A VCE(sat) VGE = 15 V chiplevel VCE0 Typical Applications* rCE • Inverter up to 14 kVA • Typical motor power 7,5 kW Remarks • VCEsat , VF= chip level value • Case temp. limited to TC= 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj≤150 (recomm. Top = -40 ... +150°C) VGE = 15 V min. typ. max. Unit Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V V Tj = 25 °C 0.8 0.9 Tj = 150 °C 0.7 0.8 V Tj = 25 °C 42 48 m Tj = 150 °C 62 66 m VGE(th) VGE = VCE V, IC = 1 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V 5.8 6.5 V Tj = 25 °C 5 0.1 0.3 mA f = 1 MHz 1.43 nF f = 1 MHz 0.12 nF f = 1 MHz 0.09 nF mA QG - 8 V...+ 15 V 142 nC RGint Tj = 25 °C 0.00 td(on) VCC = 600 V IC = 25 A RG on = 24 RG off = 24 Tj = 150 °C 28 ns Tj = 150 °C 40 ns Tj = 150 °C 2.65 mJ Tj = 150 °C 295 ns tr Eon td(off) tf Eoff VGE = +15/-15 V Rth(j-s) per IGBT Chopper - IGBT IC = 25 A VCE(sat) VGE = 15 V chiplevel VCE0 rCE VGE = 15 V Tj = 150 °C 68 ns Tj = 150 °C 2.3 mJ 1.2 K/W Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V V Tj = 25 °C 0.8 0.9 Tj = 150 °C 0.7 0.8 V Tj = 25 °C 42 48 m m Tj = 150 °C VGE(th) VGE = VCE V, IC = 1 mA ICES VGE = 0 V VCE = 1200 V Tj = 25 °C 5 62 66 5.8 6.5 V 0.1 0.3 mA Tj = 150 °C mA QG - 8 V...+ 15 V 142 nC RGint Tj = 25 °C 0.00 NAB 2 Rev. 3 – 02.12.2011 © by SEMIKRON SKiiP 23NAB12T4V1 Characteristics Symbol Conditions min. typ. max. Unit Chopper - IGBT td(on) tr Eon td(off) tf MiniSKiiP® 2 SKiiP 23NAB12T4V1 VCC = 600 V IC = 25 A RG on = 24 RG off = 24 Eoff VGE = +15/-15 V Rth(j-s) per IGBT Inverse - Diode VF = VEC IF = 25 A VGE = 0 V chiplevel VF0 rF Features • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Typical Applications* • Inverter up to 14 kVA • Typical motor power 7,5 kW IRRM Qrr Err Rth(j-s) IF = 25 A di/dtoff = 850 A/µs VGE = -15 V VCC = 600 V per Diode Freewheeling - Diode VF = VEC IF = 25 A VGE = 0 V chiplevel VF0 rF Remarks • VCEsat , VF= chip level value • Case temp. limited to TC= 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj≤150 (recomm. Top = -40 ... +150°C) IRRM Qrr Err Rth(j-s) IF = 25 A di/dtoff = 850 A/µs VGE = -15 V VCC = 600 V per Diode Rectifier - Diode VF = VEC IF = 13 A VGE = 0 V chiplevel VF0 Tj = 150 °C 28 Tj = 150 °C 40 ns Tj = 150 °C 2.65 mJ Tj = 150 °C 295 ns Tj = 150 °C 68 ns Tj = 150 °C 2.3 mJ 1.2 K/W Tj = 25 °C 2.40 2.7 V Tj = 150 °C 2.5 2.8 V V Tj = 25 °C 1.3 1.5 Tj = 150 °C 0.9 1.1 V Tj = 25 °C 44 50 m 68 m Tj = 150 °C 62 Tj = 150 °C 24 A Tj = 150 °C 3.7 µC Tj = 150 °C 1.6 mJ 1.52 K/W Tj = 25 °C 2.4 2.7 V Tj = 150 °C 2.5 2.8 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 44 50 m Tj = 150 °C 62 68 m Tj = 150 °C 24 A Tj = 150 °C 3.7 µC Tj = 150 °C 1.6 mJ 1.52 K/W Tj = 25 °C 1 1.21 V Tj = 125 °C 1.1 V Tj = 25 °C 1.0 V Tj = 125 °C Tj = 25 °C rF 9.2 Tj = 125 °C Rth(j-s) ns 0.8 V 18 m 21 per Diode 1.25 m K/W Module Ms to heat sink 2 w 2.5 Nm 65 g 1670 ± 3% Temperatur Sensor R100 Tr = 100 °C, tolerance = 3 % 2 R(T) R(T)=1000[1+A(T-25°C)+B(T-25°C) ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 NAB © by SEMIKRON Rev. 3 – 02.12.2011 3 SKiiP 23NAB12T4V1 Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature IC = f(TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic 4 Rev. 3 – 02.12.2011 © by SEMIKRON SKiiP 23NAB12T4V1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic © by SEMIKRON Rev. 3 – 02.12.2011 5 SKiiP 23NAB12T4V1 pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 6 Rev. 3 – 02.12.2011 © by SEMIKRON