datasheet

SKiiP 24NAB12T4V1
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Inverter - IGBT
VCES
IC
IC
MiniSKiiP® 2
ICRM
VGES
Tj
IC
• Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Tj = 175 °C
V
43
A
Ts = 70 °C
33
A
Ts = 25 °C
48
A
Ts = 70 °C
ICRM = 3 x ICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
39
A
35
A
105
A
-20 ... 20
V
10
µs
-40 ... 175
°C
1200
V
Ts = 25 °C
43
A
Ts = 70 °C
33
A
Ts = 25 °C
48
A
Ts = 70 °C
39
A
Tj = 150 °C
Chopper - IGBT
VCES
Features
Tj = 150 °C
1200
Ts = 25 °C
ICnom
tpsc
SKiiP 24NAB12T4V1
Tj = 25 °C
IC
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
ICnom
ICRM
VGES
Typical Applications*
tpsc
• Inverter up to 22 kVA
• Typical motor power 11 kW
Tj
ICRM = 3 x ICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 150 °C
35
A
105
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Inverse - Diode
VRRM
Remarks
• VCEsat , VF= chip level value
• Case temp. limited to TC = 125°C max.
(for baseplateless modules TC = TS)
• product rel. results valid for Tj ≤ 150
(recomm. Top = -40 … +150°C)
IF
IF
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
1200
V
Ts = 25 °C
39
A
Ts = 70 °C
30
A
Ts = 25 °C
44
A
Ts = 70 °C
35
A
35
A
IFnom
IFRM
IFRM = 3 x IFnom
105
A
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
170
A
-40 ... 175
°C
Tj
Freewheeling - Diode
VRRM
IF
IF
Tj = 25 °C
Tj = 150 °C
Tj = 175 °C
1200
V
Ts = 25 °C
39
A
Ts = 70 °C
30
A
Ts = 25 °C
44
A
Ts = 70 °C
35
A
35
A
105
A
IFnom
IFRM
IFRM = 3 x IFnom
IFSM
tp = 10 ms, sin 180°, Tj = 150 °C
Tj
170
A
-40 ... 175
°C
NAB
© by SEMIKRON
Rev. 3 – 02.12.2011
1
SKiiP 24NAB12T4V1
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
Rectifier - Diode
VRRM
Tj = 25 °C
IF
Ts = 25 °C, Tj = 150 °C
MiniSKiiP® 2
I2t
V
52
A
13
A
10 ms
sin 180°
Tj = 25 °C
370
A
Tj = 150 °C
270
A
10 ms
sin 180°
Tj = 25 °C
685
A2s
Tj = 150 °C
365
A2s
-40 ... 150
°C
IFnom
IFSM
1600
Tj
Module
It(RMS)
Tterminal = 80 °C, 20A per spring
Tstg
SKiiP 24NAB12T4V1
Visol
AC sinus 50Hz, 1 min
40
A
-40 ... 125
°C
2500
V
Characteristics
Features
• Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Typical Applications*
• Inverter up to 22 kVA
• Typical motor power 11 kW
Remarks
• VCEsat , VF= chip level value
• Case temp. limited to TC = 125°C max.
(for baseplateless modules TC = TS)
• product rel. results valid for Tj ≤ 150
(recomm. Top = -40 … +150°C)
Symbol
Conditions
Inverter - IGBT
IC = 35 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
rCE
VGE = 15 V
min.
typ.
max.
Unit
Tj = 25 °C
1.85
2.10
V
Tj = 150 °C
2.25
2.45
V
V
Tj = 25 °C
0.8
0.9
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
30
34
m
Tj = 150 °C
44
47
m
VGE(th)
VGE = VCE V, IC = 1 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
5.8
6.5
V
Tj = 25 °C
5
0.1
0.3
mA
f = 1 MHz
1.95
nF
f = 1 MHz
0.16
nF
f = 1 MHz
0.12
nF
mA
QG
- 8 V...+ 15 V
200
nC
RGint
Tj = 25 °C
0.00

td(on)
VCC = 600 V
IC = 35 A
RG on = 18 
RG off = 18 
Tj = 150 °C
30
ns
Tj = 150 °C
35
ns
Tj = 150 °C
4.3
mJ
Tj = 150 °C
300
ns
tr
Eon
td(off)
tf
Eoff
VGE = +15/-15 V
Rth(j-s)
per IGBT
Chopper - IGBT
IC = 35 A
VCE(sat)
VGE = 15 V
chiplevel
VCE0
rCE
VGE = 15 V
Tj = 150 °C
55
ns
Tj = 150 °C
3.25
mJ
1
K/W
Tj = 25 °C
1.85
2.10
V
Tj = 150 °C
2.25
2.45
V
V
Tj = 25 °C
0.8
0.9
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
30
34
m
m
Tj = 150 °C
VGE(th)
VGE = VCE V, IC = 1 mA
ICES
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
5
44
47
5.8
6.5
V
0.1
0.3
mA
Tj = 150 °C
mA
QG
- 8 V...+ 15 V
200
nC
RGint
Tj = 25 °C
0.00

NAB
2
Rev. 3 – 02.12.2011
© by SEMIKRON
SKiiP 24NAB12T4V1
Characteristics
Symbol
Conditions
min.
typ.
max.
Unit
Chopper - IGBT
td(on)
tr
Eon
td(off)
tf
MiniSKiiP® 2
SKiiP 24NAB12T4V1
VCC = 600 V
IC = 35 A
RG on = 18 
RG off = 18 
Eoff
VGE = +15/-15 V
Rth(j-s)
per IGBT
Inverse - Diode
VF = VEC IF = 35 A
VGE = 0 V
chiplevel
VF0
rF
Features
• Trench 4 IGBT´s
• Robust and soft freewheeling diodes in
CAL technology
• Highly reliable spring contacts for
electrical connections
• UL recognised file no. E63532
Typical Applications*
• Inverter up to 22 kVA
• Typical motor power 11 kW
IRRM
Qrr
Err
Rth(j-s)
• VCEsat , VF= chip level value
• Case temp. limited to TC = 125°C max.
(for baseplateless modules TC = TS)
• product rel. results valid for Tj ≤ 150
(recomm. Top = -40 … +150°C)
Freewheeling - Diode
VF = VEC IF = 35 A
VGE = 0 V
chiplevel
VF0
IRRM
Qrr
Err
Rth(j-s)
30
Tj = 150 °C
35
ns
Tj = 150 °C
4.3
mJ
Tj = 150 °C
300
ns
55
ns
Tj = 150 °C
3.25
mJ
1
K/W
Tj = 25 °C
2.3
2.6
V
Tj = 150 °C
2.3
2.6
V
V
Tj = 25 °C
1.3
1.5
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
29
32
m
40
43
m
34
A
5.6
µC
2.4
mJ
1.2
K/W
Tj = 25 °C
2.3
2.6
V
Tj = 150 °C
2.3
2.6
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
29
32
m
Tj = 150 °C
40
43
m
IF = 35 A
Tj = 150 °C
di/dtoff = 1250 A/µs T = 150 °C
j
VGE = -15 V
T
j = 150 °C
VCC = 600 V
per Diode
Rectifier - Diode
VF = VEC IF = 13 A
VGE = 0 V
chiplevel
VF0
Tj = 25 °C
34
A
5.6
µC
2.4
mJ
1.2
K/W
1
1.21
V
Tj = 125 °C
1.1
V
Tj = 25 °C
1.0
V
Tj = 125 °C
Tj = 25 °C
rF
9.2
Tj = 125 °C
Rth(j-s)
ns
Tj = 150 °C
Tj = 150 °C
IF = 35 A
Tj = 150 °C
di/dtoff = 1250 A/µs T = 150 °C
j
VGE = -15 V
Tj = 150 °C
VCC = 600 V
per Diode
rF
Remarks
Tj = 150 °C
0.8
V
18
m
21
per Diode
1.25
m
K/W
Module
Ms
to heat sink
2
w
2.5
Nm
65
g
1670 ±
3%

Temperatur Sensor
R100
Tr = 100 °C, tolerance = 3 %
2
R(T)
R(T)=1000[1+A(T-25°C)+B(T-25°C)
], A = 7.635*10-3 °C-1,
B = 1.731*10-5 °C-2
NAB
© by SEMIKRON
Rev. 3 – 02.12.2011
3
SKiiP 24NAB12T4V1
Fig. 1: Typ. output characteristic
Fig. 2: Typ. rated current vs. temperature IC = f(TS)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
4
Rev. 3 – 02.12.2011
© by SEMIKRON
SKiiP 24NAB12T4V1
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance of IGBT and Diode
Fig. 10: CAL diode forward characteristic
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. input bridge forward characteristic
© by SEMIKRON
Rev. 3 – 02.12.2011
5
SKiiP 24NAB12T4V1
pinout, dimensions
pinout
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
6
Rev. 3 – 02.12.2011
© by SEMIKRON