SKiiP 24NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT VCES IC IC MiniSKiiP® 2 ICRM VGES Tj IC • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Tj = 175 °C V 43 A Ts = 70 °C 33 A Ts = 25 °C 48 A Ts = 70 °C ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 39 A 35 A 105 A -20 ... 20 V 10 µs -40 ... 175 °C 1200 V Ts = 25 °C 43 A Ts = 70 °C 33 A Ts = 25 °C 48 A Ts = 70 °C 39 A Tj = 150 °C Chopper - IGBT VCES Features Tj = 150 °C 1200 Ts = 25 °C ICnom tpsc SKiiP 24NAB12T4V1 Tj = 25 °C IC Tj = 25 °C Tj = 150 °C Tj = 175 °C ICnom ICRM VGES Typical Applications* tpsc • Inverter up to 22 kVA • Typical motor power 11 kW Tj ICRM = 3 x ICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C 35 A 105 A -20 ... 20 V 10 µs -40 ... 175 °C Inverse - Diode VRRM Remarks • VCEsat , VF= chip level value • Case temp. limited to TC = 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 … +150°C) IF IF Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 39 A Ts = 70 °C 30 A Ts = 25 °C 44 A Ts = 70 °C 35 A 35 A IFnom IFRM IFRM = 3 x IFnom 105 A IFSM tp = 10 ms, sin 180°, Tj = 150 °C 170 A -40 ... 175 °C Tj Freewheeling - Diode VRRM IF IF Tj = 25 °C Tj = 150 °C Tj = 175 °C 1200 V Ts = 25 °C 39 A Ts = 70 °C 30 A Ts = 25 °C 44 A Ts = 70 °C 35 A 35 A 105 A IFnom IFRM IFRM = 3 x IFnom IFSM tp = 10 ms, sin 180°, Tj = 150 °C Tj 170 A -40 ... 175 °C NAB © by SEMIKRON Rev. 3 – 02.12.2011 1 SKiiP 24NAB12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Rectifier - Diode VRRM Tj = 25 °C IF Ts = 25 °C, Tj = 150 °C MiniSKiiP® 2 I2t V 52 A 13 A 10 ms sin 180° Tj = 25 °C 370 A Tj = 150 °C 270 A 10 ms sin 180° Tj = 25 °C 685 A2s Tj = 150 °C 365 A2s -40 ... 150 °C IFnom IFSM 1600 Tj Module It(RMS) Tterminal = 80 °C, 20A per spring Tstg SKiiP 24NAB12T4V1 Visol AC sinus 50Hz, 1 min 40 A -40 ... 125 °C 2500 V Characteristics Features • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Typical Applications* • Inverter up to 22 kVA • Typical motor power 11 kW Remarks • VCEsat , VF= chip level value • Case temp. limited to TC = 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 … +150°C) Symbol Conditions Inverter - IGBT IC = 35 A VCE(sat) VGE = 15 V chiplevel VCE0 rCE VGE = 15 V min. typ. max. Unit Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V V Tj = 25 °C 0.8 0.9 Tj = 150 °C 0.7 0.8 V Tj = 25 °C 30 34 m Tj = 150 °C 44 47 m VGE(th) VGE = VCE V, IC = 1 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V 5.8 6.5 V Tj = 25 °C 5 0.1 0.3 mA f = 1 MHz 1.95 nF f = 1 MHz 0.16 nF f = 1 MHz 0.12 nF mA QG - 8 V...+ 15 V 200 nC RGint Tj = 25 °C 0.00 td(on) VCC = 600 V IC = 35 A RG on = 18 RG off = 18 Tj = 150 °C 30 ns Tj = 150 °C 35 ns Tj = 150 °C 4.3 mJ Tj = 150 °C 300 ns tr Eon td(off) tf Eoff VGE = +15/-15 V Rth(j-s) per IGBT Chopper - IGBT IC = 35 A VCE(sat) VGE = 15 V chiplevel VCE0 rCE VGE = 15 V Tj = 150 °C 55 ns Tj = 150 °C 3.25 mJ 1 K/W Tj = 25 °C 1.85 2.10 V Tj = 150 °C 2.25 2.45 V V Tj = 25 °C 0.8 0.9 Tj = 150 °C 0.7 0.8 V Tj = 25 °C 30 34 m m Tj = 150 °C VGE(th) VGE = VCE V, IC = 1 mA ICES VGE = 0 V VCE = 1200 V Tj = 25 °C 5 44 47 5.8 6.5 V 0.1 0.3 mA Tj = 150 °C mA QG - 8 V...+ 15 V 200 nC RGint Tj = 25 °C 0.00 NAB 2 Rev. 3 – 02.12.2011 © by SEMIKRON SKiiP 24NAB12T4V1 Characteristics Symbol Conditions min. typ. max. Unit Chopper - IGBT td(on) tr Eon td(off) tf MiniSKiiP® 2 SKiiP 24NAB12T4V1 VCC = 600 V IC = 35 A RG on = 18 RG off = 18 Eoff VGE = +15/-15 V Rth(j-s) per IGBT Inverse - Diode VF = VEC IF = 35 A VGE = 0 V chiplevel VF0 rF Features • Trench 4 IGBT´s • Robust and soft freewheeling diodes in CAL technology • Highly reliable spring contacts for electrical connections • UL recognised file no. E63532 Typical Applications* • Inverter up to 22 kVA • Typical motor power 11 kW IRRM Qrr Err Rth(j-s) • VCEsat , VF= chip level value • Case temp. limited to TC = 125°C max. (for baseplateless modules TC = TS) • product rel. results valid for Tj ≤ 150 (recomm. Top = -40 … +150°C) Freewheeling - Diode VF = VEC IF = 35 A VGE = 0 V chiplevel VF0 IRRM Qrr Err Rth(j-s) 30 Tj = 150 °C 35 ns Tj = 150 °C 4.3 mJ Tj = 150 °C 300 ns 55 ns Tj = 150 °C 3.25 mJ 1 K/W Tj = 25 °C 2.3 2.6 V Tj = 150 °C 2.3 2.6 V V Tj = 25 °C 1.3 1.5 Tj = 150 °C 0.9 1.1 V Tj = 25 °C 29 32 m 40 43 m 34 A 5.6 µC 2.4 mJ 1.2 K/W Tj = 25 °C 2.3 2.6 V Tj = 150 °C 2.3 2.6 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 29 32 m Tj = 150 °C 40 43 m IF = 35 A Tj = 150 °C di/dtoff = 1250 A/µs T = 150 °C j VGE = -15 V T j = 150 °C VCC = 600 V per Diode Rectifier - Diode VF = VEC IF = 13 A VGE = 0 V chiplevel VF0 Tj = 25 °C 34 A 5.6 µC 2.4 mJ 1.2 K/W 1 1.21 V Tj = 125 °C 1.1 V Tj = 25 °C 1.0 V Tj = 125 °C Tj = 25 °C rF 9.2 Tj = 125 °C Rth(j-s) ns Tj = 150 °C Tj = 150 °C IF = 35 A Tj = 150 °C di/dtoff = 1250 A/µs T = 150 °C j VGE = -15 V Tj = 150 °C VCC = 600 V per Diode rF Remarks Tj = 150 °C 0.8 V 18 m 21 per Diode 1.25 m K/W Module Ms to heat sink 2 w 2.5 Nm 65 g 1670 ± 3% Temperatur Sensor R100 Tr = 100 °C, tolerance = 3 % 2 R(T) R(T)=1000[1+A(T-25°C)+B(T-25°C) ], A = 7.635*10-3 °C-1, B = 1.731*10-5 °C-2 NAB © by SEMIKRON Rev. 3 – 02.12.2011 3 SKiiP 24NAB12T4V1 Fig. 1: Typ. output characteristic Fig. 2: Typ. rated current vs. temperature IC = f(TS) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic 4 Rev. 3 – 02.12.2011 © by SEMIKRON SKiiP 24NAB12T4V1 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance of IGBT and Diode Fig. 10: CAL diode forward characteristic Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. input bridge forward characteristic © by SEMIKRON Rev. 3 – 02.12.2011 5 SKiiP 24NAB12T4V1 pinout, dimensions pinout This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. 6 Rev. 3 – 02.12.2011 © by SEMIKRON