Reliability Report

AOS Semiconductor
Product Reliability Report
AOD508,
rev A
30V N-Channel AlphaMOS
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
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This AOS product reliability report summarizes the qualification result for AOD508. Accelerated
environmental tests are performed on a specific sample size, and then followed by electrical test
at end point. Review of final electrical test result confirms that AOD508 passes AOS quality and
reliability requirements. The released product will be categorized by the process family and be
monitored on a quarterly basis for continuously improving the product quality.
Table of Contents:
I.
II.
III.
IV.
Product Description
Package and Die information
Environmental Stress Test Summary and Result
Reliability Evaluation
I. Product Description:
General description:
• Latest Trench Power MOSFET technology 30V
• Very Low RDS(on) at 10V VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application:
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
-RoHS Compliant
-Halogen Free
Details refer to the datasheet.
II. Die / Package Information:
AOD508
Standard sub-micron
Low voltage N channel process
Package Type
TO252
Lead Frame
Bare Cu
Die Attach
Soft solder
Bond wire
Al & Au wire
Mold Material
Epoxy resin with silica filler
Moisture Level
Up to Level 1 *
Note * based on info provided by assembler and mold compound supplier
Process
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III. Result of Reliability Stress for AOD508
Test Item
Test Condition
Time
Point
MSL
Precondition
168hr 85°
c
/85%RH +3 cycle
reflow@260°
c
Temp = 150°
c,
Vgs=100% of
Vgsmax
-
168hrs
500 hrs
1000 hrs
1 lot
Temp = 150°
c,
Vds=80% of
Vdsmax
168hrs
500 hrs
1000 hrs
1 lot
HTGB
Lot
Attribution
9 lots
Total
Sample size
Number
of
Failures
Reference
Standard
1210pcs
0
JESD22A113
77pcs
0
JESD22A108
0
JESD22A108
495pcs
0
JESD22A110
77 pcs / lot
HTRB
77pcs
77 pcs / lot
HAST
Pressure Pot
Temperature
Cycle
130 +/- 2°
c,
85%RH,
33.3 psi, Vgs =
100% of Vgs max
121°
c , 29.7psi,
RH=100%
100 hrs
9 lots
96 hrs
(Note A*)
5 lots
55 pcs / lot
275pcs
0
JESD22A102
-65°
c to 150°
c,
air to air,
250 / 500
cycles
(Note A*)
8 lots
55 pcs / lot
440pcs
0
JESD22A104
(Note A*)
55 pcs / lot
Note A: The reliability data presents the available generic data up to the published date.
IV. Reliability Evaluation
FIT rate (per billion): 137
MTTF = 833 years
The presentation of FIT rate for the individual product reliability is restricted by the actual burn-in
sample size. Failure Rate Determination is based on JEDEC Standard JESD 85. FIT means one
failure per billion device hours.
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9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)]
= 1.83 x 109 / [2x (2x77x168+6x77x1000) x (258)] = 137
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MTTF = 10 / FIT = 7.30 x 10 hrs = 833 years
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB and HTGB tests
H = Duration of HTRB/HTGB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
130 deg C
150 deg C
Tuse
Af
258
87
32
13
5.64
2.59
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Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
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