Datasheet

AOD508/AOI508
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Latest Trench Power MOSFET technology
• Very Low RDS(on) at 10VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
ID (at VGS=10V)
30V
70A
RDS(ON) (at VGS=10V)
< 3mΩ
RDS(ON) (at VGS = 4.5V)
< 4.5mΩ
100% UIS Tested
100% Rg Tested
TO252
DPAK
TO-251A
IPAK
TopView
Top View
Bottom View
D
D
S
D
G
D
S
G
Gate-Source Voltage
G
S
Pulsed Drain Current C
Avalanche Current
C
Units
V
±20
V
55
A
22
IDSM
TA=70°C
Maximum
30
159
IDM
TA=25°C
Continuous Drain
Current
S
D
70
ID
TC=100°C
G
D
VGS
TC=25°C
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current G
D
Bottom View
A
18
IAS
37
A
Avalanche energy L=0.1mH C
EAS
68
mJ
VDS Spike
VSPIKE
36
V
100ns
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
PD
TA=25°C
Rev 1: April 2012
2.5
Steady-State
Steady-State
RθJA
RθJC
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
25
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
50
-55 to 175
Typ
16
41
2.1
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°C
Max
20
50
3
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOD508/AOI508
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
VGS=4.5V, ID=20A
3.3
4.5
mΩ
105
0.7
1
V
58
A
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
V
3
Forward Transconductance
Rg
nA
2.2
4.4
VSD
Reverse Transfer Capacitance
100
2.4
gFS
Crss
1.8
3.5
TJ=125°C
VDS=5V, ID=20A
Output Capacitance
µA
5
1.2
Units
V
1
TJ=55°C
IGSS
Max
30
VDS=30V, VGS=0V
VGS(th)
Coss
Typ
VGS=10V, VDS=15V, ID=20A
0.9
mΩ
S
2010
pF
898
pF
124
pF
1.8
2.7
Ω
36
49
nC
17
23
nC
6
nC
Gate Drain Charge
8
nC
Turn-On DelayTime
7.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=500A/µs
4.0
ns
37.0
ns
7.5
ns
14
ns
nC
20.3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: April 2012
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Page 2 of 6
AOD508/AOI508
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
50
45
4.5V
80
VDS=5V
40
3.5V
35
10V
60
ID(A)
ID (A)
30
3V
40
25
20
15
125°C
20
VGS=2.5V
5
0
0
0
1
2
3
4
0
5
6
2
3
4
5
6
Normalized On-Resistance
1.8
5
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
4
3
2
VGS=10V
1
1.6
VGS=10V
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
8
1.0E+02
ID=20A
1.0E+01
6
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
25°C
10
4
1.0E-01
125°C
1.0E-02
1.0E-03
2
25°C
25°C
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: April 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD508/AOI508
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
3000
VDS=15V
ID=20A
2500
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
2000
1500
1000
Coss
500
0
Crss
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
25
400
1000.0
100.0
10µs
RDS(ON)
300
10.0
100µs
1ms
10ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
Power (W)
ID (Amps)
10µs
17
5
TJ(Max)=150°C
2
TC=25°C
10
200
100
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=T
/T
D=Ton
on/T
T
TJ,PK
=TCC+P
+PDM
.ZθJC
.RθJC
J,PK=T
DM.Z
θJC.R
θJC
1
InIndescending
descendingorder
order
D=0.5,
D=0.5,0.3,
0.3,0.1,
0.1,0.05,
0.05,0.02,
0.02,0.01,
0.01,single
singlepulse
pulse
40
R
RθJC
=3°C/W
θJC=3°C/W
0.1
Single Pulse
Single Pulse
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: April 2012
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Page 4 of 6
AOD508/AOI508
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
50
Current rating ID(A)
Power Dissipation (W)
60
40
30
20
60
40
20
10
0
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
175
10000
TA=25°C
Power (W)
1000
100
10
1
1E-05
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
/T
D=T
on
TJ,PK=T
=TA+P
+PDM.Z
.ZθJA.R
.RθJA
T
J,PK
1
A
DM
θJA
descendingorder
order
InIndescending
D=0.5,0.3,
0.3,0.1,
0.1,0.05,
0.05,0.02,
0.02,0.01,
0.01,single
singlepulse
pulse
D=0.5,
θJA
RθJA=64°C/W
=50°C/W
R
θJA
40
0.1
0.01
Single
Pulse
Single
Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: April 2012
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Page 5 of 6
AOD508/AOI508
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 1: April 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6