AOD5N50 500V,5A N-Channel MOSFET General Description Product Summary The AOD5N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. 600V@150℃ VDS ID (at VGS=10V) 5A < 1.6Ω RDS(ON) (at VGS=10V) 100% UIS Tested! 100% Rg Tested! TO252 DPAK Top View Bottom View D D D G S G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentB TC=25°C TC=100°C Pulsed Drain Current C Repetitive avalanche energy C Single plused avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter A,G Maximum Junction-to-Ambient Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev0: June 2010 Units V ±30 V 5 ID 3.1 IDM Avalanche Current C Maximum 500 A 17 IAR 2.8 A EAR 118 mJ EAS dv/dt 235 5 104 mJ V/ns W 0.83 -50 to 150 W/ oC °C 300 °C PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 43 Maximum 55 Units °C/W 1 0.5 1.2 °C/W °C/W Page 1 of 6 AOD5N50 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C ID=250µA, VGS=0V VDS=500V, VGS=0V Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V ID=250µA RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current Maximum Body-Diode Pulsed Current Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime 1 µA 10 ±100 4.1 4.5 nΑ V VGS=10V, ID=2.5A 1.2 1.6 Ω VDS=40V, ID=2.5A 5 1 V DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance V/ C 0.6 VDS=400V, TJ=125°C IGSS Coss V o VGS(th) ISM 600 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=400V, ID=5A 3.4 0.76 S 5 A 17 A 430 538 670 pF 40 58 80 pF 2.5 4.5 7 pF 1.2 2.3 3.5 Ω 9 11.5 14 nC 3 3.8 4.6 nC 2 4.1 6.2 nC VGS=10V, VDS=250V, ID=5A, RG=25Ω 18 ns 32 ns 34 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=5A,dI/dt=100A/µs,VDS=100V 145 182 220 Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V 1.7 2.2 2.7 22 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: June 2010 www.aosmd.com Page 2 of 6 AOD5N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 100 10V VDS=40V 8 -55°C ID(A) ID (A) 10 6.5V 6 6V 125°C 4 1 VGS=5.5V 2 25°C 0.1 0 0 5 10 15 20 25 2 30 4 VDS (Volts) Fig 1: On-Region Characteristics 8 10 3 4.0 Normalized On-Resistance 3.5 3.0 RDS(ON) (Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics VGS=10V 2.5 2.0 1.5 1.0 0.5 2 4 6 8 10 12 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 VGS=10V ID=2.5A 2 1.5 1 0.5 0 -100 0.0 0 2.5 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 ID=30A 125°C 40 1.0E+00 1 IS (A) BVDSS (Normalized) 1.0E+01 1.1 125°C 25°C 1.0E-01 1.0E-02 0.9 25°C 0.8 -100 -50 0 1.0E-03 50 100 150 200 1.0E-04 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev0: June 2010 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 AOD5N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=400V ID=2.5A Capacitance (pF) VGS (Volts) 12 9 6 Coss 100 Crss 10 3 1 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 18 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 800 RDS(ON) limited 100µs 1ms DC 10ms TJ(Max)=150°C TC=25°C 0.1 100 10 600 400 100 1000 0 0.0001 VDS (Volts) 1 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=150°C TC=25°C 200 0.01 1 Power (W) 10µs 1 ZθJC Normalized Transient Thermal Resistance 1 1000 10 ID (Amps) Ciss 1000 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 0.001 0.000001 PD Single Pulse 0.00001 0.0001 Ton 0.001 0.01 T 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: June 2010 www.aosmd.com Page 4 of 6 AOD5N50 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 5 90 Current rating ID(A) Power Dissipation (W) 120 60 30 4 3 2 1 0 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 150 TCASE (°C) Figure 13: Current De-rating (Note B) 500 TJ(Max)=150°C TA=25°C Power (W) 400 300 200 100 0 0.001 ZθJA Normalized Transient Thermal Resistance 10 1 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse 0.001 0.0001 0.0001 Ton 0.001 0.01 0.1 1 10 T 100 1000 10000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev0: June 2010 www.aosmd.com Page 5 of 6 AOD5N50 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs Rg + VDC 90% Vdd - 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 BVDSS AR Vds Id + Vgs Vgs VDC Rg - Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev0: June 2010 Vgs L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6