AOD6N50 500V,5.3A N-Channel MOSFET General Description The AOD6N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Features VDS 600V@150℃ ID (at VGS=10V) 5.3A RDS(ON) (at VGS=10V) < 1.4Ω D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C Units V ±30 V 5.3 ID 3.3 A IDM 17 Avalanche Current C IAR 2.8 A Repetitive avalanche energy C EAR 118 mJ Single plused avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 235 5 104 mJ V/ns W 0.83 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F 1/6 Maximum 500 PD TJ, TSTG TL Symbol RθJA RθCS RθJC Typical 43 Maximum 55 Units °C/W 1 0.5 1.2 °C/W °C/W www.freescale.net.cn AOD6N50 500V,5.3A N-Channel MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V Gate Threshold Voltage VDS=5V ID=250µA VGS(th) ID=250µA, VGS=0V, TJ=150°C 600 ID=250µA, VGS=0V VDS=500V, VGS=0V 0.6 V V/ oC 1 VDS=400V, TJ=125°C 10 ±100 3.4 µA 4.1 4.5 nΑ V 1.4 Ω RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.5A 1.2 gFS Forward Transconductance VDS=40V, ID=2.5A 5 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 5 A ISM Maximum Body-Diode Pulsed Current 17 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=5A S 0.76 1 430 538 670 pF 40 58 80 pF 2.5 4.5 7 pF 1.2 2.3 3.5 Ω 9 11.5 14 nC 3 3.8 4.6 nC 2 4.1 6.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=5A,dI/dt=100A/µs,VDS=100V 145 182 220 Qrr Body Diode Reverse Recovery Charge IF=5A,dI/dt=100A/µs,VDS=100V 1.7 2.2 2.7 Body Diode Reverse Recovery Time V 18 VGS=10V, VDS=250V, ID=5A, RG=25Ω ns 32 ns 34 ns 22 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=2.8A, VDD=150V, RG=10Ω, Starting TJ=25°C 2/6 www.freescale.net.cn AOD6N50 500V,5.3A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 100 10V VDS=40V 8 -55°C 10 ID (A) ID(A) 6.5V 6 6V 125°C 4 1 VGS=5.5V 2 25°C 0.1 0 0 5 10 15 20 25 2 30 4 3 3.5 2.5 Normalized On-Resistance 4.0 RDS(ON) (Ω Ω) 3.0 VGS=10V 2.5 2.0 1.5 1.0 6 8 10 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=10V ID=2.5A 2 1.5 1 0.5 0.5 0 0.0 -100 0 2 4 6 8 10 12 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 ID=30A 1.0E+00 1 125° 25°C 1.0E-01 1.0E-02 0.9 25° 0.8 1.0E-03 1.0E-04 -100 3/6 125°C 40 IS (A) BVDSS (Normalized) 1.0E+01 1.1 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOD6N50 500V,5.3A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=400V ID=2.5A Ciss 1000 Capacitance (pF) VGS (Volts) 12 9 6 Coss 100 Crss 10 3 1 0 0 3 6 9 12 15 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 18 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 1000 800 RDS(ON) limited 100µs 1 1ms DC 10ms TJ(Max)=150°C TC=25°C 0.1 Power (W) 10µs 10 ID (Amps) 1 TJ(Max)=150°C TC=25°C 600 400 200 0.01 0 1 10 100 1000 0.0001 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.2°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOD6N50 500V,5.3A N-Channel MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6 5 90 Current rating ID(A) Power Dissipation (W) 120 60 30 4 3 2 1 0 0 0 25 50 75 100 125 TCASE (°C) Figure 12: Power De-rating (Note B) 150 0 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 500 TJ(Max)=150°C TA=25°C Power (W) 400 300 200 100 0 0.001 Zθ JA Normalized Transient Thermal Resistance 10 1 0.01 0.1 1 10 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 100 1000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PD Single Pulse 0.001 Ton T 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AOD6N50 500V,5.3A N-Channel MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.freescale.net.cn