SKM200GAR17E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1700 V Tc = 25 °C 321 A Tc = 80 °C 248 A 200 A ICnom ICRM SEMITRANS® 3 IGBT4 Modules SKM200GAR17E4 VGES tpsc Tj ICRM = 3xICnom VCC = 1000 V VGE ≤ 15 V VCES ≤ 1700 V 600 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 213 A Tc = 80 °C 157 A 200 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequenzies up to 8kHz • UL recognized, file no. E63532 IFRM IFRM = 2xIFnom 400 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1170 A -40 ... 175 °C Tc = 25 °C 213 A Tc = 80 °C 157 A 200 A Tj Freewheeling diode IF IFnom IFRM IFRM = 2xIFnom 400 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1170 A -40 ... 175 °C Typical Applications* Tj • DC/DC – converter • Brake chopper • Switched reluctance motor Tstg Remarks Visol • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C Tj = 175 °C Module It(RMS) AC sinus 50 Hz, t = 1 min 500 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Conditions IC = 200 A VGE = 15 V chiplevel chiplevel rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 8 mA ICES VGE = 0 V VCE = 1700 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C min. typ. max. Unit Tj = 25 °C 1.90 2.20 V Tj = 150 °C 2.30 2.60 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 5.50 6.50 mΩ 8.00 9.00 mΩ 5.8 6.4 V 2.7 mA Tj = 150 °C 5.2 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 18 nF f = 1 MHz 0.68 nF f = 1 MHz 0.58 nF 1600 nC 3.8 Ω GAR © by SEMIKRON Rev. 1 – 01.04.2015 1 SKM200GAR17E4 Characteristics Symbol Eoff Rth(j-c) per IGBT tr Eon td(off) tf SEMITRANS® 3 IGBT4 Modules SKM200GAR17E4 Inverse diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 chiplevel rF Features • IGBT4 = 4. generation medium fast trench IGBT (Infineon) • CAL4 = Soft switching 4. Generation CAL-Diode • Insulated copper baseplate using DBC Technology (Direct Copper Bonding) • With integrated Gate resistor • For switching frequenzies up to 8kHz • UL recognized, file no. E63532 Typical Applications* • DC/DC – converter • Brake chopper • Switched reluctance motor Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C Conditions VCC = 1200 V IC = 200 A VGE = +15/-15 V RG on = 2 Ω RG off = 2 Ω di/dton = 6830 A/µs di/dtoff = 1120 A/µs du/dt = 5250 V/µs td(on) IRRM Qrr Err Rth(j-c) chiplevel IRRM Qrr Err Rth(j-c) chiplevel typ. max. Unit 259 ns Tj = 150 °C 35 ns Tj = 150 °C 69 mJ Tj = 150 °C 712 ns Tj = 150 °C 149 ns Tj = 150 °C 79 mJ 0.122 K/W Tj = 25 °C 2.00 2.40 V Tj = 150 °C 2.15 2.57 V Tj = 25 °C 1.32 1.56 V Tj = 150 °C 1.08 1.22 V Tj = 25 °C 3.4 4.2 mΩ 5.4 6.8 mΩ Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 5910 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 1200 V per diode Freewheeling diode VF = VEC IF = 200 A VGE = 0 V chiplevel VF0 chiplevel rF min. Tj = 150 °C 272 A 63 µC 45 mJ 0.276 K/W Tj = 25 °C 2.00 2.40 V Tj = 150 °C 2.15 2.57 V Tj = 25 °C 1.32 1.56 V Tj = 150 °C 1.08 1.22 V Tj = 25 °C 3.4 4.2 mΩ 5.4 6.8 mΩ Tj = 150 °C IF = 200 A Tj = 150 °C di/dtoff = 5910 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 1200 V per Diode 272 A 63 µC 45 mJ 0.276 K/W Module LCE RCC'+EE' terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 15 nH TC = 25 °C 0.55 mΩ TC = 125 °C 0.85 mΩ 0.02 to terminals M6 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g GAR 2 Rev. 1 – 01.04.2015 © by SEMIKRON SKM200GAR17E4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 01.04.2015 3 SKM200GAR17E4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 1 – 01.04.2015 © by SEMIKRON SKM200GAR17E4 SEMITRANS 3 GAR This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 01.04.2015 5