SKM400GM12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 616 A Tc = 80 °C 474 A 400 A ICnom ICRM SEMITRANS® 3 Fast IGBT4 Modules SKM400GM12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V 1200 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 440 A Tc = 80 °C 329 A 400 A Tj = 150 °C Inverse diode IF Tj = 175 °C IFnom Features • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 20kHz • UL recognized, file no. E63532 Typical Applications* • Matrix Inverter • Bidirectional switch IFRM IFRM = 3xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1980 A -40 ... 175 °C Tj Module It(RMS) Visol • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C AC sinus 50 Hz, t = 1 min 500 A -40 ... 125 °C 4000 V Characteristics Symbol IGBT VCE(sat) VCE0 Remarks Tterminal = 80 °C Tstg Conditions IC = 400 A VGE = 15 V chiplevel chiplevel min. typ. max. Unit Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V Tj = 25 °C 2.50 2.88 m 3.75 4.00 m 5.8 6.5 V 5 mA rCE VGE = 15 V chiplevel VGE(th) VGE=VCE, IC = 15.2 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C VCC = 600 V IC = 400 A VGE = ±15 V RG on = 1 RG off = 1 di/dton = 9700 A/µs di/dtoff = 4300 A/µs td(on) tr Eon td(off) tf Eoff Rth(j-c) Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 24.6 nF f = 1 MHz 1.62 nF f = 1 MHz 1.38 nF 2260 nC 1.9 Tj = 150 °C 220 ns Tj = 150 °C 47 ns Tj = 150 °C 33 mJ Tj = 150 °C 505 ns Tj = 150 °C 78 ns Tj = 150 °C 42 mJ per IGBT 0.072 K/W GM © by SEMIKRON Rev. 1 – 03.09.2013 1 SKM400GM12T4 Characteristics Symbol Conditions Inverse diode VF = VEC IF = 400 A VGE = 0 V chiplevel VF0 chiplevel rF SEMITRANS® 3 Fast IGBT4 Modules SKM400GM12T4 IRRM Qrr Err Rth(j-c) • IGBT4 = 4. generation fast trench IGBT (Infineon) • CAL4 = Soft switching 4. generation CAL-diode • Isolated copper baseplate using DBC technology (Direct Bonded Copper) • Increased power cycling capability • With integrated gate resistor • For higher switching frequenzies up to 20kHz • UL recognized, file no. E63532 typ. max. Unit Tj = 25 °C 2.20 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 2.3 2.5 m 3.1 3.4 m Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 8800 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 600 V per diode 450 A 68 µC 30.5 mJ 0.14 K/W Module LCE RCC'+EE' Features chiplevel min. 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 20 nH TC = 25 °C 0.25 m TC = 125 °C 0.5 m 0.02 to terminals M6 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g Typical Applications* • Matrix Inverter • Bidirectional switch Remarks • Case temperature limited to Tc = 125°C max. • Recommended Top = -40 ... +150°C • Product reliability results valid for Tj = 150°C GM 2 Rev. 1 – 03.09.2013 © by SEMIKRON SKM400GM12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 1 – 03.09.2013 3 SKM400GM12T4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 1 – 03.09.2013 © by SEMIKRON SKM400GM12T4 SEMITRANS 3 GM This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. © by SEMIKRON Rev. 1 – 03.09.2013 5