SKM400GM12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 618 A Tc = 80 °C 475 A 400 A ICnom ICRM SEMITRANS® 3 Fast IGBT4 Modules ICRM = 3xICnom 1200 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 440 A Tc = 80 °C 329 A 400 A VGES tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Tj Inverse diode IF SKM400GM12T4 Tj = 175 °C IFnom Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) IFRM IFRM = 3xIFnom 1200 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 1980 A -40 ... 175 °C Tj Module It(RMS) Tstg Visol • Matrix Inverter Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° A °C 4000 V Characteristics Symbol Typical Applications AC sinus 50Hz, t = 1 min 500 -40 ... 125 Conditions min. typ. max. Unit Tj = 25 °C 1.8 2.05 V Tj = 150 °C 2.2 2.4 V VCE0 Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE Tj = 25 °C 2.5 2.9 mΩ 3.8 4.0 mΩ 5.8 6.5 V 0.1 0.3 mA IGBT VCE(sat) IC = 400 A VGE = 15 V chiplevel VGE = 15 V Tj = 150 °C VGE(th) VGE=VCE, IC = 15.2 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V QG VGE = - 8 V...+ 15 V RGint Tj = 25 °C td(on) Eoff VCC = 600 V IC = 400 A VGE = ±15 V RG on = 1 Ω RG off = 1 Ω di/dton = 9700 A/µs di/dtoff = 4300 A/µs Rth(j-c) per IGBT tr Eon td(off) tf Tj = 25 °C 5 Tj = 150 °C mA f = 1 MHz 24.6 nF f = 1 MHz 1.62 nF f = 1 MHz 1.38 nF 2260 nC 1.9 Ω Tj = 150 °C 220 ns Tj = 150 °C 47 ns Tj = 150 °C 33 mJ Tj = 150 °C 505 ns Tj = 150 °C 78 ns Tj = 150 °C 42 mJ 0.072 K/W GM © by SEMIKRON Rev. 0 – 22.06.2009 1 SKM400GM12T4 Characteristics Symbol SEMITRANS® 3 rF IRRM Qrr Fast IGBT4 Modules Conditions Inverse diode VF = VEC IF = 400 A VGE = 0 V chip VF0 Err Rth(j-c) min. typ. max. Unit Tj = 25 °C 2.2 2.52 V Tj = 150 °C 2.15 2.47 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 2.3 2.5 mΩ 3.1 3.4 mΩ Tj = 150 °C IF = 400 A Tj = 150 °C di/dtoff = 8800 A/µs T = 150 °C j VGE = ±15 V T j = 150 °C VCC = 600 V per diode 450 A 68 µC 30.5 mJ 0.14 K/W Module SKM400GM12T4 LCE RCC'+EE' Features • VCE(sat) with positive temperature coefficient • High short circuit capability, self limiting to 6 x Icnom • Fast & soft inverse CAL diodes • Large clearance (10 mm) and creepage distances (20 mm) • Isolated copper baseplate using DBC Technology (Direct Copper Bonding) 15 terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt 20 nH TC = 25 °C 0.25 mΩ TC = 125 °C 0.5 mΩ 0.02 to terminals M6 0.038 K/W 3 5 Nm 2.5 5 Nm Nm w 325 g Typical Applications • Matrix Inverter Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° GM 2 Rev. 0 – 22.06.2009 © by SEMIKRON SKM400GM12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 0 – 22.06.2009 3 SKM400GM12T4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: CAL diode forward characteristic Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 0 – 22.06.2009 © by SEMIKRON SKM400GM12T4 Semitrans 3 GM This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 0 – 22.06.2009 5