SKM400GB12E4 DataSheet

SKM400GB12E4
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 25 °C
Tj = 175 °C
1200
V
Tc = 25 °C
616
A
Tc = 80 °C
474
A
400
A
ICnom
ICRM
SEMITRANS® 3
IGBT4 Modules
SKM400GB12E4
VGES
tpsc
Tj
ICRM = 3xICnom
VCC = 800 V
VGE ≤ 15 V
VCES ≤ 1200 V
1200
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
440
A
Tc = 80 °C
329
A
400
A
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
IFnom
Features
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
12kHz
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
IFRM
IFRM = 3xIFnom
1200
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
1980
A
-40 ... 175
°C
Tj
Module
It(RMS)
Visol
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
AC sinus 50 Hz, t = 1 min
500
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
IGBT
VCE(sat)
VCE0
Remarks
Tterminal = 80 °C
Tstg
Conditions
IC = 400 A
VGE = 15 V
chiplevel
chiplevel
min.
typ.
max.
Unit
Tj = 25 °C
1.80
2.05
V
Tj = 150 °C
2.20
2.40
V
Tj = 25 °C
0.8
0.9
V
Tj = 150 °C
0.7
0.8
V
Tj = 25 °C
2.50
2.88
m
3.75
4.00
m
5.8
6.5
V
5
mA
rCE
VGE = 15 V
chiplevel
VGE(th)
VGE=VCE, IC = 15.2 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
QG
VGE = - 8 V...+ 15 V
RGint
Tj = 25 °C
VCC = 600 V
IC = 400 A
VGE = ±15 V
RG on = 1 
RG off = 1 
di/dton = 9700 A/µs
di/dtoff = 4300 A/µs
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
Tj = 150 °C
5
Tj = 25 °C
Tj = 150 °C
mA
f = 1 MHz
24.6
nF
f = 1 MHz
1.62
nF
f = 1 MHz
1.38
nF
2260
nC
1.9

Tj = 150 °C
242
ns
Tj = 150 °C
47
ns
Tj = 150 °C
33
mJ
Tj = 150 °C
580
ns
Tj = 150 °C
101
ns
Tj = 150 °C
56
mJ
per IGBT
0.072
K/W
GB
© by SEMIKRON
Rev. 4 – 21.08.2013
1
SKM400GB12E4
Characteristics
Symbol
Conditions
Inverse diode
VF = VEC IF = 400 A
VGE = 0 V
chiplevel
VF0
chiplevel
rF
SEMITRANS® 3
IGBT4 Modules
SKM400GB12E4
IRRM
Qrr
Err
Rth(j-c)
• IGBT4 = 4. generation medium fast
trench IGBT (Infineon)
• CAL4 = Soft switching 4. generation
CAL-diode
• Isolated copper baseplate using DBC
technology (Direct Bonded Copper)
• Increased power cycling capability
• With integrated gate resistor
• For higher switching frequenzies up to
12kHz
• UL recognized, file no. E63532
typ.
max.
Unit
Tj = 25 °C
2.20
2.52
V
Tj = 150 °C
2.15
2.47
V
Tj = 25 °C
1.3
1.5
V
Tj = 150 °C
0.9
1.1
V
Tj = 25 °C
2.3
2.5
m
3.1
3.4
m
Tj = 150 °C
IF = 400 A
Tj = 150 °C
di/dtoff = 8800 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 600 V
per diode
450
A
68
µC
30.5
mJ
0.14
K/W
Module
LCE
RCC'+EE'
Features
chiplevel
min.
15
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
20
nH
TC = 25 °C
0.25
m
TC = 125 °C
0.5
m
0.02
to terminals M6
0.038
K/W
3
5
Nm
2.5
5
Nm
Nm
w
325
g
Typical Applications*
• AC inverter drives
• UPS
Remarks
• Case temperature limited
to Tc = 125°C max.
• Recommended Top = -40 ... +150°C
• Product reliability results valid
for Tj = 150°C
GB
2
Rev. 4 – 21.08.2013
© by SEMIKRON
SKM400GB12E4
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 4 – 21.08.2013
3
SKM400GB12E4
Fig. 7: Typ. switching times vs. IC
Fig. 8: Typ. switching times vs. gate resistor RG
Fig. 9: Transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. RCC'+ EE'
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 4 – 21.08.2013
© by SEMIKRON
SKM400GB12E4
SEMITRANS 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 4 – 21.08.2013
5