Brochure Samsung Memory DDR4 SDRAM The new generation of high-performance, power-efficient memory that delivers great reliability for enterprise applications © 2015 Samsung Electronics Co. Brochure An optimized memory for enterprise-level workloads and client workloads on low-end servers used as web, collaboration and infrastructure systems. Meet diverse enterprise workload demands, while enhancing client performance and battery life with higher bandwidth and reduced power consumption Rising energy costs and the need to provide greater environmental sustainability are also placing demands on chipmakers and server vendors. A server running a virtualized environment can achieve a higher utilization that, in turn, increases the total power consumption of the server. As a result, CPU and server companies are focusing more on the development of next-generation green IT systems. Accelerated adoption of cloud computing, virtualization and high-performance computing (HPC) technologies has made higher-performing, higher-density memory a key factor for optimal server operations. Highly virtualized environments enable companies to run numerous applications on a single server instead of multiple servers. A single server with more virtual machines (VMs) requires not only a higher processor speed, but also higher memory density . The memory that supports next-generation, green IT systems should meet the diverse demands of enterprise workloads with higher performance, increased density, improved reliability and low power consumption. Requirements for memory become more diverse when supporting a wide range of enterprise server applications, from less critical workloads to mission-critical workloads. Enterpriselevel workloads, such as databases or transaction processing that run on high-end servers, need a large capacity of in-memory systems and higher reliability. As screen resolution increases (up to 8K UHD), more memory bandwidth is also needed for client applications. Adopting higher bandwidth memory, users can better experience the more natural and smoother texture inherent in high resolution screens. Also, one of the most important factors in portable PCs is battery life time. By reducing memory power consumption, users can take advantage of their portable PCs longer with extended battery life. Mid-range servers that are used for virtualization or consolidation require high bandwidth and scalability. Small form factor, lower power consumption and low cost are essential requirements for 2 Brochure Leverage the expertize of a technology leader in innovation Samsung DDR4 SDRAM provide an optimized solution for enterprise applications The portfolio includes the following modules : Samsung DDR4 is an optimized solution for highly virtualized environments, high-performance computing and networking as well as PC clients. Samsung DDR4-based modules are designed with a new system circuit architecture to deliver higher performance with lower power requirements than previously available memory products. Voltage Speed 3,200 Mbps 3.3 V 1,866 Mbps 1.8 V 2.5 V 1,600 Mbps 800 Mbps 133 Mbps 1.35 V 400 Mbps SDR DDR DDR2 DDR3 DDR3L Enterprise Client 4 GB - UDIMMs/SoDIMMs 8 GB RDIMMs UDIMMs/SoDIMMs 16 GB RDIMMs UDIMMs/SoDIMMs 32 GB RDIMMs/LRDIMMs UDIMMs/SoDIMMs 64 GB RDIMMs/LRDIMMs - 128 GB RDIMMs/LRDIMMs - 256 GB RDIMMs - Doubled bandwidth, along with reduced voltage and dramatically lower power consumption, improve performance and optimize the total cost of ownership (TCO). Samsung DDR4's enhanced reliability, availability and serviceability (RAS) features provide enhanced reliability and improved signal integrity (S/I). 1.2 V 1.5 V Density DDR4 To meet the ever increasing demand for higher density server memory modules, Samsung offers 3DS (3 Dimensional Stacked) DDR4 RDIMMs which apply TSV (Through Silicon Via) technology. The new TSV 3DS stack technology enables higher density DRAM stack packages with higher operational frequency and reduced power consumption. The RDIMM configuration along with 3DS TSV DRAM packages exhibits performance benefits and lower power consumption over alternative high density solutions to ultimately provide the lowest TCO for data centers. High speed and low voltage of DDR4 SDRAM The Samsung portfolio of DDR4-based modules using 20 nmclass process technology includes registered dual inline memory modules (RDIMMs), load-reduced DIMMs (LRDIMMs) for servers and unregistered DIMMs (UDIMMs), and small outline DIMMs (SODIMMs) for workstations and PCs. These memory modules are available with initial speeds up to 2667 Mbps, increasing to the Joint Electron Devices Engineering Council (JEDEC)-defined 3200 Mbps. 3 Brochure Low - power memory consumption with higher capacity and performance DDR3 [GB per second] DDR4 DDR4 60 52.5 DDR4-2666, 128-bit = 42.7 GB/s 45 37.5 30 22.5 15 DDR3-1066, 128-bit = 17.0 GB/s 7.5 ... 2011 DDR4-2133, 128-bit = 34 GB/s DDR3-1866, 128-bit = 30 GB/s DDR3-1600, 128-bit DDR3-1333, = 25.6 GB/s 128-bit = 21.3 GB/s 2012 2013 2014 Increased performance for higher bandwidth Max 45 % Better 42 % 65 % 1.42 1 1 1DPC DDR3L 1600 M DDR4 2133 M 26 % Power Efficient 1.45 1.65 DDR3L 1333 M DDR4 1867 M [Watt/Performance] 26 % 3DPC DDR3L 800 M 2017 2018 20 % Power Efficient 1.26 1 1 2DPC 2016 A major decrease in voltage and the improved input/output (I/O) power efficiency of DDR4 synchronous dynamic RAM (SDRAM) translates into significant cost savings. According to Samsung internal testing, DDR4 boasts a continuous working voltage of 1.2 V, a voltage that is 11% lower than the 1.35 V consumed by DDR3L. It also has a Pseudo Open Drain (POD) interface to reduce I/O power consumption and increase power savings by 50% compared to DDR3L. Overall DDR4 shows a higher performance/watt of over 20% Max 65 % Better 45 % 2015 Reduce power usage for greener, lower-cost computing Samsung DDR4 delivers higher performance at higher speeds than DDR3. DDR4 can achieve up to 3.2 Gbps bandwidth. Compared to DDR3L (low power DDR3), Samsung DDR4 shows overall performance improvements in every DIMM and over 40% better performance at 1DIMM per channel. Max 42 % Better DDR4-2400, 128-bit = 38.4 GB/s DDR4-3200, 128-bit DDR4-2933, = 51.2 GB/s 128-bit = 46.9 GB/s 20 % 1 1DPC DDR4 1600 M DDR3 1600 M 4 1.20 2DPC DDR4 2133 M Measured under controller’s POR condition Samsung SPEC_CPU Benchmark/DDR3L 1.35 V vs. DDR4 1.2 V/2Rank 16 GB [Watt/Performance] DDR3 1333 M DDR4 1867 M Samsung Power Benchmark/ DDR3L 1.35 V vs. DDR4 1.2 V Brochure 100% detection of random 1-to 2-bit errors +CRC For Reliability : DQ +Parity For Reliability : CMD/ADD 0100 … 00 0100 … 00 0100 … 001011 0100 … 001 DDR3 Control DDR4 +Per DRAM Addressability For Better S/I : Vref setting CLK 2N mode +Gear Down Mode For Better S/I : High Speed RAS feature comparison of DDR3 and DDR4 SDRAM 3. Per DRAM Addressability for enhanced signal integrity Provide greater reliability, availability and serviceability (RAS) Samsung DDR4 can control module components and enhance signal integrity by controlling the ODT of Vref levels. DDR3 modules provided only one RAS feature, their errorcorrecting code (ECC) capability. Compared to DDR3, Samsung DDR4 provides more robust RAS features, such as Cyclic Redundancy Check (CRC), Parity, Per DRAM Addressability and Gear Down Mode. Enhanced reliability and improved S/I for mission-critical enterprise applications are directly attributable to Samsung DDR4's significant advancements with the following RAS features: 4. Gear Down Mode for improved signal integrity DDR4 Gear Down Mode allows a high speed of DQ to be maintained while decreasing the high speed of CMD/ADD. Fault-tolerant, higher RAS systems supported by DDR4 SDRAM can remain available for considerably longer periods of time without failure. 1. Cyclic Redundancy Check (CRC) for improved data reliability CRC is error-detecting code that detects accidental changes to raw data of DRAM's DQ. CRC confirms 100% detection of random 1- to 2-bit errors by enabling error detection capability for data transfer. 2. On-chip parity detection for the integrity of Command/ Address Parity for Command/Address (CMD/ADD) provides a method of verifying the integrity of command and address transfers over a link. 5 Brochure Samsung DDR4 SDRAM delivering higher performance and reduced power consumption with increased reliability. By taking advantage of the advanced features of Samsung DDR4, companies can achieve greater performance at a lower TCO. Manage a range of enterprise workloads with greater reliability, doubled bandwidth and reduced power consumption Designed with advanced system circuit architecture, Samsung DDR4 supports a wide range of server memory needs by DDR3 and DDR4 Specifications and features comparison Feature Component density, speed Physical 512 Mb - 4 Gb 4 Gb - 16 Gb 0.8 – 1.6 Gbps 1.6 - 3.2 Gbps 8, 16, 32, 64 and 256 GB 1.5V, 1.5V, NA (1.35V, 1.35V, NA) 1.2 V, 1.2 V, 2.5 V Vref External Vref (VDD, 2) Internal Vref (need training) Data I/O Center Tab Termination (CTT) (34 ohm) POD (34 ohm) Voltage(VDD, VDDQ, VPP) Core architecture DDR4 1, 2, 4, 8, 16, 32 and 64 GB Module density Interface DDR3 CMD, ADDR I/O CTT CTT Strobe Bi-dir, diff Bi-dir, diff Number of banks 8 banks 16 banks (4-bank group) Page size (X4, 8, 16) 1 KB, 1 KB, 2 KB 512 B, 1 KB, 2 KB Number of prefetch 8 bits 8 bits Added functions RESET, ZQ, Dynamic ODT RESET, ZQ, Dynamic ODT, CRC, Data Bus Inversion (DBI), Multiple preamble Package type, balls (X4, 8, X16) 78, 96 BGA 78, 96 BGA DIMM type R, LR, U, SoDIMM R, 3DS R, LR, (ECC/nECC) U/SoDIMM DIMM pins 240 (R, LR, U), 204 (So) 288 (R, LR, U), 260 (So) Legal and additional information About Samsung Electronics Co., Ltd. Samsung Electronics Co., Ltd. is a global leader in technology, opening new possibilities for people everywhere. Through relentless innovation and discovery, we are transforming the worlds of TVs, smartphones, tablets, PCs, cameras, home appliances, printers, LTE systems, medical devices, semiconductors and LED solutions. We employ 307,000 people across 84 countries with annual sales of U.S $196 billion. To discover more, please visit official website at www.samsung.com For more information For more information about Samsung DDR4 SDRAM, visit www.samsung.com/semiconductor Copyright ⓒ 2015 Samsung Electronics Co. Ltd. All rights reserved. Samsung is a registered trademark of Samsung Electronics Co. Ltd. Specifications and designs are subject to change without notice. Non-metric weights and measurements are approximate. All data were deemed correct at time of creation. Samsung is not liable for errors or omissions. All brand, product, service names and logos are trademarks and/or registered trademarks of their respective owners and are hereby recognized and acknowledged. Samsung Electronics Co., Ltd. (Maetan-dong) 129 Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Korea 2015-07 6