New Product SMMB912DK Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-75 Package - Small Footprint Area • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC • Find out more about Vishay’s Medical Products at: www.vishay.com/medical-mosfets 20 RDS(on) (Ω) at VGS = 4.5 V 0.216 RDS(on) (Ω) at VGS = 2.5 V 0.268 RDS(on) (Ω) at VGS = 1.8 V 0.375 ID (A)a 1.5 Configuration Dual PowerPAK SC75-6L-Dual D1 D2 1 S1 2 G1 3 D2 D1 D1 6 G1 G2 APPLICATION EXAMPLES D2 G2 5 1.60 mm 4 S2 S1 S2 N-Channel MOSFET N-Channel MOSFET 1.60 mm • Medical Implantable Applications Including - Drug Delivery Systems - Defibrillators - Pacemakers - Hearing Aids - Other Implantable Devices • Load Switch, PA Switch and Battery Switch for Portable Devices • DC/DC Converter Marking Code MBX Part # code XXX Lot Traceability and Date code ORDERING INFORMATION Package PowerPAK SC-75 Lead (Pb)-free and Halogen-free SMMB912DK-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage SYMBOL VDS LIMIT 20 Gate-Source Voltage VGS ±8 TC = 25 °Ca Continuous Drain Current (TJ = 150 °C) TC = 70 °Ca TA = 25 °Cb, c ID Continuous Source-Drain Diode Current Maximum Power Dissipation TA = 25 °Cb, c IS Soldering Recommendations (Peak Temperature)c, d Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 5 0.9 3.1 TC = 70 °C 2.0 TA = 25 °Cb, c PD A 1.5 TC = 25 °C TA = 70 °Cb, c Operating Junction and Storage Temperature Range 1.5 1.5 1.4 IDM TC = 25 °Ca V 1.5 TA = 70 °Cb, c Pulsed Drain Current UNIT 1.1 W 0.7 TJ, Tstg - 55 to + 150 260 °C www.vishay.com 1 New Product SMMB912DK Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambientb, f t≤5s SYMBOL TYPICAL MAXIMUM RthJA 90 115 UNIT °C/W 32 40 Junction-to-Case (Drain) Steady State RthJC Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 125 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 µA 20 - - - V 22 - - -2 - Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage mV/°C VGS(th) VDS = VGS, ID = 250 µA 0.4 - 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VGS = 0 V VDS = 20 V - - 1 VGS = 0 V VDS = 20 V, TJ = 55 °C - - 10 VGS = 4.5 V VDS ≥ 5 V 5 - - VGS = 4.5 V ID = 1.8 A - 0.180 0.216 VGS = 2.5 V ID = 1.6 A - 0.223 0.268 VGS = 1.8 V ID = 0.3 A - 0.300 0.375 - 3 - - 95 - - 24 - VDS = 10 V, ID = 1.8 A µA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VGS = 0 V VDS = 10 V, f = 1 MHz - 11 - VGS = 8 V VDS = 10 V, ID = 1.8 A - 2 3 - 1.2 1.8 VGS = 4.5 V VDS = 10 V, ID = 1.8 A - 0.3 - f = 1 MHz td(on) tr td(off) VDD = 10 V, RL = 7.1 Ω ID ≅ 1.4 A, VGEN = 4.5 V, Rg = 1 Ω - 0.15 - 0.5 2.5 5 - 5 10 - 10 20 - 24 36 tf - 8 16 td(on) - 2 4 tr td(off) VDD = 10 V, RL = 7.1 Ω ID ≅ 1.4 A, VGEN = 8 V, Rg = 1 Ω tf - 9 18 - 8 16 - 7 14 - - 1.5 - - 5 - 0.7 1.2 pF nC Ω ns Source-Drain Body Diode Characteristics Continuous Source-Drain Diode Currentc IS Pulse Diode Forward Current ISM Body Diode Voltage VSD www.vishay.com 2 TC = 25 °C IS = 1.4 A, VGS = 0 V A V Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 New Product SMMB912DK Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Source-Drain Body Diode Characteristics Body Diode Reverse Recovery Time trr - 9 18 ns Body Diode Reverse Recovery Charge Qrr - 3 6 nC Reverse Recovery Fall Time ta - 6 - Reverse Recovery Rise Time tb - 3 - IF = 1.4 A, dI/dt = 100 A/µs, TJ = 25 °C ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Package limited. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.0 5 VGS = 5 V thru 2.5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 4 VGS = 2 V 3 2 VGS = 1.5 V 0.6 TC = 25 °C 0.4 0.2 1 TC = 125 °C TC = - 55 °C VGS = 1 V 0.0 0.0 0 0 1 2 3 4 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 1.5 2.0 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 150 0.5 120 0.3 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) VGS = 1.8 V 0.4 VGS = 2.5 V 0.2 VGS = 4.5 V Ciss 90 60 0.1 30 0.0 0 0 1 2 3 4 5 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 Coss Crss 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 New Product SMMB912DK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1.8 8 ID = 1.8 A R DS(on) - On-Resistance 6 VDS = 10 V VDS = 16 V 4 2 0 0.0 0.4 0.8 1.2 1.6 1.5 VGS = 2.5 V (Normalized) VGS - Gate-to-Source Voltage (V) ID = 1.8 A 1.2 VGS = 4.5 V 0.9 0.6 - 50 2.0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature Gate Charge 0.4 10 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 1.8 A TJ = 150 °C 1 TJ = 25 °C 0.3 TJ = 125 °C 0.2 TJ = 25 °C 0.1 0.0 0.1 0 0.3 0.6 0.9 0 1.2 2 VSD - Source-to-Drain Voltage (V) 4 6 8 VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.85 8 0.75 Power (W) VGS(th) (V) 6 0.65 ID = 250 µA 0.55 2 0.45 0.35 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) Threshold Voltage www.vishay.com 4 4 125 150 0 0.001 0.01 0.1 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 New Product SMMB912DK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 4 100 µs 3 I D - Drain Current (A) I D - Drain Current (A) Limited by RDS(on)* 1 1 ms 10 ms 100 ms 1 s, 10 s DC 0.1 TA = 25 °C Single Pulse 2 Package Limited 1 BVDSS Limited 0.01 0.1 1 0 100 10 0 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 25 50 75 100 125 150 TC - Case Temperature (°C) Safe Operating Area, Junction-to-Ambient Current Derating* 1.5 4 1.2 Power (W) Power (W) 3 2 1 0.9 0.6 0.3 0.0 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating, Junction-to-Case 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating, Junction-to-Ambient * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 www.vishay.com 5 New Product SMMB912DK Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W Single Pulse 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65459. www.vishay.com 6 Document Number: 65459 S09-2018-Rev. A, 05-Oct-09 Package Information Vishay Siliconix b e PIN1 b e PIN3 PIN2 PIN1 PIN3 PIN6 K3 PIN5 E1 E1 K K D1 D1 D1 E3 E1 D2 K E2 K4 L PIN2 L PowerPAK® SC75-6L PIN6 K2 PIN4 K1 K2 BACKSIDE VIEW OF SINGLE PIN5 K1 PIN4 K2 BACKSIDE VIEW OF DUAL D A E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A1 Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.18 0.25 0.33 0.007 0.010 0.013 0.18 0.25 0.33 0.007 0.010 0.013 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 D1 0.57 0.67 0.77 0.022 0.026 0.030 0.34 0.44 0.54 0.013 0.017 0.021 D2 0.10 0.20 0.30 0.004 0.008 0.012 E 1.53 1.60 1.70 0.060 0.063 0.067 1.53 1.60 1.70 0.060 0.063 0.067 E1 1.00 1.10 1.20 0.039 0.043 0.047 0.51 0.61 0.71 0.020 0.024 0.028 E2 0.20 0.25 0.30 0.008 0.010 0.012 E3 0.32 0.37 0.42 0.013 0.015 0.017 e 0.50 BSC 0.020 BSC 0.50 BSC 0.020 BSC K 0.180 TYP 0.007 TYP 0.245 TYP 0.010 TYP K1 0.275 TYP 0.011 TYP 0.320 TYP 0.013 TYP K2 0.200 TYP 0.008 TYP 0.200 BSC 0.008 TYP K3 0.255 TYP 0.010 TYP K4 0.300 TYP L 0.15 0.25 0.012 TYP 0.35 T 0.006 0.010 0.014 0.15 0.25 0.35 0.006 0.010 0.014 0.03 0.08 0.13 0.001 0.003 0.005 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5935 Document Number: 73000 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC75-6L Dual 2.2 (0.087) 1.25 (0.049) 0.25 (0.01) 1.6 (0.063) (0.024) 0.61 2.2 (0.087) (0,0) 0.32 (0.013) 0.44 (0.017) 0.25 (0.01) 0.375 (0.015) 1 0.5 (0.02) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70489 Revision: 28-Oct-08 www.vishay.com 15 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000