SiA445EDJ Datasheet

New Product
SiA445EDJ
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω) Max.
ID (A)
0.0165 at VGS = - 4.5 V
- 12a
0.0185 at VGS = - 3.7 V
- 12a
0.0300 at VGS = - 2.5 V
a
Qg (Typ.)
23 nC
- 12
PowerPAK SC-70-6L-Single
1
APPLICATIONS
D
• Smart Phones, Tablet PCs, Mobile Computing
- Battery Switch
- Charger Switch
- Load Switch
2
D
3
6
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Thermally Enhanced PowerPAK®
SC-70 Package
- Small Footprint Area
- Low On-Resistance
• 100 % Rg Tested
• Built in ESD Protection with Zener Diode
• Typical ESD Performance: 2000 V
• Compliant to RoHS Directive 2002/95/EC
G
D
S
D
5
2.05 mm
S
S
Marking Code
2.05 mm
4
BQX
Part # code
XXX
G
Lot Traceability
and Date code
Ordering Information:
SiA445EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
D
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Maximum Power Dissipation
ID
Operating Junction and Storage Temperature Range
TJ, Tstg
d, e
V
- 12a
- 2.9b, c
19
12
IS
PD
Unit
- 12a
- 12a
- 11.8b, c
- 9.5b, c
- 50
IDM
Pulsed Drain Current (t = 300 µs)
Soldering Recommendations (Peak Temperature)
Limit
- 20
± 12
3.5b, c
2.2b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
28
5.3
Maximum
36
6.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 80 °C/W.
Document Number: 63619
S11-2525-Rev. A, 26-Dec-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA445EDJ
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
VGS(th)
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain
Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
IGSS
IDSS
ID(on)
RDS(on)
gfs
ID = - 250 µA
VDS = VGS, ID = - 250 µA
V
- 13
mV/°C
2.6
- 0.5
- 1.2
VDS = 0 V, VGS = ± 12 V
± 60
VDS = 0 V, VGS = ± 4.5 V
±1
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ - 5 V, VGS = - 4.5 V
- 20
V
µA
A
VGS = - 4.5 V, ID = - 7 A
0.0135
0.0165
VGS = - 3.7 V, ID = - 5 A
0.0150
0.0185
VGS = - 2.5 V, ID = - 5 A
0.0210
0.0300
VDS = - 10 V, ID = - 7 A
29
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
2130
VDS = - 10 V, VGS = 0 V, f = 1 MHz
280
VDS = - 10 V, VGS = - 10 V, ID = - 12 A
VDS = - 10 V, VGS = - 4.5 V, ID = - 12 A
td(off)
72
23
35
f = 1 MHz
VDD = - 10 V, RL = 1 Ω
ID ≅ - 9.5 A, VGEN = - 4.5 V, Rg = 1 Ω
1.2
6
12
25
50
25
50
55
110
tf
20
40
td(on)
7
15
tr
td(off)
nC
6.7
td(on)
tr
48
3.1
Qgd
Rg
pF
290
VDD = - 10 V, RL = 1 Ω
ID ≅ - 9.5 A, VGEN = - 10 V, Rg = 1 Ω
tf
10
20
60
120
17
35
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TC = 25 °C
- 12
- 50
IS = - 9.5 A, VGS = 0 V
IF = - 9.5 A, dI/dt = 100 A/µs,
TJ = 25 °C
A
- 0.8
- 1.2
V
15
30
ns
5
10
nC
7
8
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 63619
S11-2525-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA445EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10-3
2.0
10-4
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
1.6
TJ = 25 °C
1.2
0.8
TJ = 150 °C
10-5
10-6
TJ = 25 °C
10-7
0.4
10-8
10-9
0
0
2
4
6
8
10
12
VGS - Gate-Source Voltage (V)
14
0
16
3
6
9
12
15
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
20
50
VGS = 5 V thru 3 V
VGS = 2.5 V
16
ID - Drain Current (A)
ID - Drain Current (A)
40
30
VGS = 2 V
20
12
8
TC = 25 °C
4
10
TC = 125 °C
VGS = 1.5 V
TC = - 55 °C
0
0
0
0.5
1
1.5
2
2.5
VDS - Drain-to-Source Voltage (V)
3
0
1
0.5
1.5
VGS - Gate-to-Source Voltage (V)
- 0.5
Output Characteristics
Transfer Characteristics
0.06
3200
2800
0.05
2400
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
2
0.04
VGS = 2.5 V
0.03
VGS = 3.7 V
0.02
Ciss
2000
1600
1200
800
VGS = 4.5 V
0.01
Coss
400
0.00
Crss
0
0
10
20
30
40
ID - Drain Current (A)
On-Resistance vs. Drain Current
Document Number: 63619
S11-2525-Rev. A, 26-Dec-11
50
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA445EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.5
10
8
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 12 A
VDS = 5 V
6
VDS = 10 V
4
VDS = 16 V
2
10
20
30
40
VGS = 2.5 V, ID = 5 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
0
0
VGS = 4.5 V, 3.7 V, ID = 7 A
1.4
50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
Gate Charge
125
150
On-Resistance vs. Junction Temperature
100
0.06
ID = 7 A
0.05
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
TJ = 150 °C
10
TJ = 25 °C
1
0.04
TJ = 125 °C
0.03
0.02
TJ = 25 °C
0.01
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
30
0.9
25
0.8
20
0.7
ID = 250 μA
15
0.6
10
0.5
5
0.4
- 50
1
VSD - Source-to-Drain Voltage (V)
Power (W)
VGS(th) (V)
0.1
0.0
- 25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
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4
125
150
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Single Pulse Power, Junction-to-Ambient
Document Number: 63619
S11-2525-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA445EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by RDS(on)*
100 µs
ID - Drain Current (A)
10
1 ms
1
10 ms
0.1
100 ms
1s
10 s
DC
TA = 25 °C
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
20
30
Power Dissipation (W)
ID - Drain Current (A)
25
20
15
Package Limited
10
15
10
5
5
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63619
S11-2525-Rev. A, 26-Dec-11
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5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiA445EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 80 C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
10-3
4. Surface Mounted
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
1
0.1
10-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63619.
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Document Number: 63619
S11-2525-Rev. A, 26-Dec-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
b
e
PIN1
PIN3
PIN1
PIN2
PIN3
PIN5
K1
E1
E1
K
PIN6
K3
D1
D1
K
D2
D1
E3
E1
E2
K4
K
L
PIN2
b
e
L
PowerPAK® SC70-6L
PIN6
PIN4
K2
PIN5
K1
K2
BACKSIDE VIEW OF SINGLE
PIN4
K2
BACKSIDE VIEW OF DUAL
A
D
C
A1
E
Notes:
1. All dimensions are in millimeters
2. Package outline exclusive of mold flash and metal burr
3. Package outline inclusive of plating
Z
z
DETAIL Z
SINGLE PAD
DIM
A
MILLIMETERS
DUAL PAD
INCHES
MILLIMETERS
INCHES
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
Min
Nom
Max
0.675
0.75
0.80
0.027
0.030
0.032
0.675
0.75
0.80
0.027
0.030
0.032
A1
0
-
0.05
0
-
0.002
0
-
0.05
0
-
0.002
b
0.23
0.30
0.38
0.009
0.012
0.015
0.23
0.30
0.38
0.009
0.012
0.015
C
0.15
0.20
0.25
0.006
0.008
0.010
0.15
0.20
0.25
0.006
0.008
0.010
D
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
D1
0.85
0.95
1.05
0.033
0.037
0.041
0.513
0.613
0.713
0.020
0.024
0.028
D2
0.135
0.235
0.335
0.005
0.009
0.013
E
1.98
2.05
2.15
0.078
0.081
0.085
1.98
2.05
2.15
0.078
0.081
0.085
E1
1.40
1.50
1.60
0.055
0.059
0.063
0.85
0.95
1.05
0.033
0.037
0.041
E2
0.345
0.395
0.445
0.014
0.016
0.018
E3
0.425
0.475
0.525
0.017
0.019
0.021
e
0.65 BSC
0.026 BSC
0.65 BSC
0.026 BSC
K
0.275 TYP
0.011 TYP
0.275 TYP
0.011 TYP
K1
0.400 TYP
0.016 TYP
0.320 TYP
0.013 TYP
K2
0.240 TYP
0.009 TYP
0.252 TYP
0.010 TYP
K3
0.225 TYP
0.009 TYP
K4
L
0.355 TYP
0.175
0.275
0.014 TYP
0.375
T
0.007
0.011
0.015
0.175
0.275
0.375
0.007
0.011
0.015
0.05
0.10
0.15
0.002
0.004
0.006
ECN: C-07431 − Rev. C, 06-Aug-07
DWG: 5934
Document Number: 73001
06-Aug-07
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1
Application Note 826
Vishay Siliconix
RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single
0.300 (0.012)
0.650 (0.026)
0.350 (0.014)
0.275 (0.011)
0.550 (0.022)
0.475 (0.019)
2.200 (0.087)
1.500
(0.059)
0.870 (0.034)
0.235 (0.009)
0.355 (0.014)
0.350 (0.014)
1
0.650 (0.026)
0.300 (0.012)
0.950 (0.037)
Dimensions in mm/(Inches)
Return to Index
APPLICATION NOTE
Document Number: 70486
Revision: 21-Jan-08
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Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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Revision: 02-Oct-12
1
Document Number: 91000