SiB914DK Datasheet

New Product
SiB914DK
Vishay Siliconix
Dual N-Channel 1.2-V (G-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (Ω)
ID (A)g
0.113 at VGS = 4.5 V
1.5a
0.138 at VGS = 2.5 V
1.5a
0.190 at VGS = 1.8 V
1.5
a
0.280 at VGS = 1.5 V
1.0
0.480 at VGS = 1.2 V
0.3
VDS (V)
8
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
Qg (Typ.)
1.5 nC
• Load Switch, PA Switch and Battery Switch for Portable
Devices
• DC/DC Converter
D1
D2
1
S1
Marking Code
2
G1
3
D2
D1
CBX
Part # code
D2
G2
5
1.60 mm
4
S2
COMPLIANT
APPLICATIONS
PowerPAK SC75-6L-Dual
D1
6
RoHS
G1
XXX
G2
Lot Traceability
and Date code
1.60 mm
Ordering Information: SiB914DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
ID
IDM
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
IS
PD
TJ, Tstg
Limit
8
±5
1.5a
1.5a
1.5a, b, c
1.5a, b, c
6
1.5a
0.9b, c
3.1
2.0
1.1b, c
0.7b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t≤5s
RthJA
90
115
Maximum Junction-to-Ambientb, f
°C/W
RthJC
Maximum Junction-to-Case (Drain)
Steady State
32
40
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 125 °C/W.
g. Based on TC = 25 °C.
Document Number: 68792
S-81946-Rev. A, 25-Aug-08
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1
New Product
SiB914DK
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = 250 µA
8
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = 250 µA
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward
Transconductancea
RDS(on)
gfs
V
8.3
mV/°C
- 2.1
0.35
0.8
V
± 100
nA
VDS = 8 V, VGS = 0 V
1
VDS = 8 V, VGS = 0 V, TJ = 55 °C
10
VDS ≥ 5 V, VGS = 4.5 V
6
µA
A
VGS = 4.5 V, ID = 2.5 A
0.090
0.113
VGS = 2.5 V, ID = 2.2 A
0.110
0.138
VGS = 1.8 V, ID = 1.9 A
0.150
0.190
VGS = 1.5 V, ID = 1.0 A
0.200
0.280
VGS = 1.2 V, ID = 0.1 A
0.280
0.480
VDS = 4 V, ID = 2.5 A
10
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
125
VDS = 4 V, VGS = 0 V, f = 1 MHz
35
VDS = 4 V, VGS = 5 V, ID = 2.5 A
VDS = 4 V, VGS = 4.5 V, ID = 2.5 A
tr
1.7
2.6
1.5
2.3
0.25
nC
0.25
f = 1 MHz
td(on)
td(off)
pF
68
VDD = 4 V, RL = 2 Ω
ID ≅ 2.0 A, VGEN = 4.5 V, Rg = 1 Ω
tf
0.7
3.5
7.0
4
8
7
14
22
33
9
19
Ω
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
1.5c
TC = 25 °C
6
IS = 2.0 A, VGS = 0 V
0.7
1.2
A
V
Body Diode Reverse Recovery Time
trr
10
15
ns
Body Diode Reverse Recovery Charge
Qrr
2
4
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = 2.0 A, dI/dt = 100 A/µs, TJ = 25 °C
4
6
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Package limited.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 68792
S-81946-Rev. A, 25-Aug-08
New Product
SiB914DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
1.0
VGS = 5 thru 2.5 V
VGS = 2 V
0.8
I D - Drain Current (A)
I D - Drain Current (A)
5
4
3
VGS = 1.5 V
2
0.6
0.4
TC = 25 °C
0.2
1
TC = 125 °C
VGS = 1 V
0
0
1
2
3
4
TC = - 55 °C
0.0
0.0
5
0.3
VDS - Drain-to-Source Voltage (V)
0.4
160
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
200
0.3
VGS = 1.8 V
0.2
VGS = 2.5 V
0.1
VGS = 4.5 V
0
1
2
3
4
120
Coss
80
Crss
5
0
6
0
2
4
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
5
8
1.7
ID = 2.5 A
4
VGS = 1.8 V; ID = 1.9 A
1.5
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
6
ID - Drain Current (A)
VDS = 4 V
3
VDS = 6.4 V
2
1
0
0.0
1.5
Ciss
40
0.0
1.2
Transfer Characteristics
0.5
VGS = 1.5 V
0.9
VGS - Gate-to-Source Voltage (V)
Output Characteristics
VGS = 1.2 V
0.6
VGS = 2.5 V; ID = 2.2 A
1.3
1.1
VGS = 4.5 V; ID = 2.5 A
0.9
0.4
0.8
1.2
1.6
2.0
0.7
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 68792
S-81946-Rev. A, 25-Aug-08
150
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New Product
SiB914DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.25
10
R DS(on) - On-Resistance (Ω)
I S - Source Current (A)
ID = 2.5 A
TJ = 25 °C
TJ = 150 °C
1
0.1
0.0
0.20
0.15
TJ = 125 °C
0.10
TJ = 25 °C
0.05
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
2
VSD - Source-to-Drain Voltage (V)
4
6
8
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
8
0.8
0.7
Power (W)
VGS(th) (V)
6
0.6
ID = 250 µA
0.5
4
2
0.4
0.3
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
10
I D - Drain Current (A)
Limited by RDS(on)*
100 µs
1
1 ms
10 ms
100 ms
1 s, 10 s
DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1
1
10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 68792
S-81946-Rev. A, 25-Aug-08
New Product
SiB914DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5
I D - Drain Current (A)
4
3
2
Package Limited
1
0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Current Derating*
4
1.5
1.2
Power (W)
Power (W)
3
2
0.9
0.6
1
0.3
0
0.0
0
25
50
75
100
125
TC - Case Temperature (°C)
Power Derating, Junction-to-Case
150
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68792
S-81946-Rev. A, 25-Aug-08
www.vishay.com
5
New Product
SiB914DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
Single Pulse
t1
t2
2. Per Unit Base = RthJA = 100 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
10-4
0.02
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?68792.
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Document Number: 68792
S-81946-Rev. A, 25-Aug-08
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Revision: 02-Oct-12
1
Document Number: 91000